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Results: 28

Composite system based on CdSe/ZnS quantum dots and GaAs nanowires.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1346, doi. 10.1134/S106378261310014X
By:
- Khrebtov, A.;
- Talalaev, V.;
- Werner, P.;
- Danilov, V.;
- Artemyev, M.;
- Novikov, B.;
- Shtrom, I.;
- Panfutova, A.;
- Cirlin, G.
Publication type:
Article
Coupled plasma waves in a system of two two-dimensional superlattices in the presence of a quantizing electric field.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1312, doi. 10.1134/S1063782613100114
By:
- Glazov, S.;
- Kubrakova, E.;
- Mescheryakova, N.
Publication type:
Article
Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1397, doi. 10.1134/S1063782613100151
By:
- Korenev, V.;
- Savelyev, A.;
- Zhukov, A.;
- Omelchenko, A.;
- Maximov, M.
Publication type:
Article
Synthesis and determination of the structural and optical characteristics of cBN micropowder with Eu ions.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1405, doi. 10.1134/S1063782613100205
By:
- Leonchik, S.;
- Karotki, A.
Publication type:
Article
Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1412, doi. 10.1134/S1063782613100175
By:
- Krylov, P. N.;
- Zakirova, R. M.;
- Fedotova, I. V.
Publication type:
Article
Photoelectric converters with graded-gap layers based on ZnSe.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1372, doi. 10.1134/S1063782613100047
By:
- Bobrenko, Yu.;
- Pavelets, S.;
- Pavelets, A.;
- Yaroshenko, N.
Publication type:
Article
Ultra-low density InAs quantum dots.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1324, doi. 10.1134/S1063782613100096
By:
- Dubrovskii, V.;
- Cirlin, G.;
- Brunkov, P.;
- Perimetti, U.;
- Akopyan, N.
Publication type:
Article
Obtaining of SmS based semiconducting material and investigation of its electrical properties.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1298, doi. 10.1134/S1063782613100126
By:
- Kaminskii, V.;
- Hirai, Shinji;
- Kuzuya, Toshihiro;
- Solov'ev, S.;
- Stepanov, N.;
- Sharenkova, N.
Publication type:
Article
Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1387, doi. 10.1134/S1063782613100187
By:
- Kryzhanovskaya, N.;
- Zhukov, A.;
- Nadtochy, A.;
- Maximov, M.;
- Moiseev, E.;
- Kulagina, M.;
- Savelev, A.;
- Arakcheeva, E.;
- Lipovskii, A.;
- Zubov, F.;
- Kapsalis, A.;
- Mesaritakis, C.;
- Syvridis, D.;
- Mintairov, A.;
- Livshits, D.
Publication type:
Article
The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1336, doi. 10.1134/S1063782613100072
By:
- Danilov, L. V.;
- Zegrya, G. G.
Publication type:
Article
Synchrotron study of the formation of nanoclusters in Al2O3/SiOx/Al2O3/SiOx/…/Si(100) multilayer nanostructures.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1316, doi. 10.1134/S106378261310028X
By:
- Turishchev, S. Yu.;
- Terekhov, V. A.;
- Koyuda, D. A.;
- Pankov, K. N.;
- Ershov, A. V.;
- Grachev, D. A.;
- Mashin, A. I.;
- Domashevskaya, E. P.
Publication type:
Article
Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1333, doi. 10.1134/S1063782613100035
By:
- Andreev, B.;
- Sobolev, N.;
- Denisov, D.;
- Shek, E.
Publication type:
Article
Optical constants of silicon nanoparticle thin films grown by laser electrodispersion.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1367, doi. 10.1134/S1063782613100102
By:
- Yeltsina, O.;
- Andronikov, D.;
- Semerukhin, M.;
- Yavsin, D.;
- Vainshtein, J.;
- Sreseli, O.;
- Gurevich, S.
Publication type:
Article
Effect of impurities on the color of polycrystalline zinc selenide.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1301, doi. 10.1134/S1063782613100254
By:
- Sherstobitova, A.;
- Yaskov, A.
Publication type:
Article
Numerical modeling of the polarization current of geminate pairs in disordered polymers with traps.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1292, doi. 10.1134/S1063782613100163
By:
- Korolev, N.;
- Nikitenko, V.;
- Tyutnev, A.
Publication type:
Article
Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1382, doi. 10.1134/S1063782613100230
By:
- Prudaev, I.;
- Golygin, I.;
- Shirapov, S.;
- Romanov, I.;
- Khludkov, S.;
- Tolbanov, O.
Publication type:
Article
Method for studying the light-induced degradation of α-Si:H/μ c-Si:H tandem photovoltaic converters under increased illuminance.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1376, doi. 10.1134/S1063782613100060
By:
- Chesta, O.;
- Ablayev, G.;
- Blatov, A.;
- Bobyl, A.;
- Emelyanov, V.;
- Orekhov, D.;
- Terukov, E.;
- Timoshina, N.;
- Shvarts, M.
Publication type:
Article
Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1328, doi. 10.1134/S1063782613100138
By:
- Katsaba, A.;
- Fedyanin, V.;
- Ambrozevich, S.;
- Vitukhnovsky, A.;
- Lobanov, A.;
- Selyukov, A.;
- Vasiliev, R.;
- Samatov, I.;
- Brunkov, P.
Publication type:
Article
Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1422, doi. 10.1134/S1063782613100217
By:
- Maraeva, E.;
- Moshnikov, V.;
- Tairov, Yu.
Publication type:
Article
The analysis of leakage current in MIS Au/SiO/ n-GaAs at room temperature.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1308, doi. 10.1134/S1063782613100023
By:
- Altuntas, H.;
- Ozcelik, S.
Publication type:
Article
Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1416, doi. 10.1134/S1063782613100266
By:
- Sibirev, N.;
- Bouravleuv, A.;
- Trushkov, Yu.;
- Beznasyuk, D.;
- Samsonenko, Yu.;
- Cirlin, G.
Publication type:
Article
Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1358, doi. 10.1134/S1063782613100242
By:
- Sevastyanov, M.;
- Lobkov, V.;
- Shmelev, A.;
- Leontev, A.;
- Matuhin, V.;
- Bobyl, A.;
- Terukov, E.;
- Kukin, A.
Publication type:
Article
Development of new CdTe based hybrid semiconducting layers produced in one step by electro-codeposition.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1303, doi. 10.1134/S1063782613100229
By:
- Mitzithra, C.;
- Chountoulesi, E.;
- Hamilakis, S.;
- Kordatos, K.;
- Kollia, C.;
- Loizos, Z.
Publication type:
Article
Study of the interaction mechanisms between absorbed NO and por-Si/SnO nanocomposite layers.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1362, doi. 10.1134/S1063782613100059
By:
- Bolotov, V.;
- Kan, V.;
- Makushenko, R.;
- Biryukov, M.;
- Ivlev, K.;
- Roslikov, V.
Publication type:
Article
Study of applicability of Boltzmann-statistics and two mobility models for organic semiconductors.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1351, doi. 10.1134/S1063782613100291
By:
- Zhou, Chen-Xin;
- Sun, Jiu-Xun;
- Deng, Zhi-Jun;
- Zhou, Shuai
Publication type:
Article
Structural and electronic properties of SiGe binary semiconducting alloys under the effect of temperature and pressure.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1283, doi. 10.1134/S1063782613100084
By:
- Degheidy, A.;
- Elkenany, E.
Publication type:
Article
Ge-Te-Se and Ge-Te-Se-S alloys as new materials for acousto-optic devices of the near-, mid-, and far-infrared spectral regions.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1426, doi. 10.1134/S1063782613100199
By:
- Kulakova, L.;
- Melekh, B.;
- Grudinkin, S.;
- Danilov, A.
Publication type:
Article
Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1391, doi. 10.1134/S1063782613100278
By:
- Tsai, Jung-Hui;
- Lee, Ching-Sung;
- Jhou, Jia-Cing;
- Wu, You-Ren;
- Chiang, Chung-Cheng;
- Chao, Yi-Ting;
- Liu, Wen-Chau
Publication type:
Article