Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 8

Results: 23

Electrical characteristics of n-GaAs-anode film-GaO-metal structures.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1003, doi. 10.1134/S1063782612080088

By:

Kalygina, V.;
Valiev, K.;
Zarubin, A.;
Petrova, Yu.;
Tolbanov, O.;
Tyazhev, A.;
Yaskevich, T.

Publication type:

Article

Photoelectric determination of the series resistance of multijunction solar cells.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143

By:

Mintairov, M.;
Evstropov, V.;
Kalyuzhnyi, N.;
Mintairov, C.;
Timoshina, N.;
Shvartz, M.;
Lantratov, V.

Publication type:

Article

Quantum-confined stark effect and localization of charge carriers in AlGaN/AlGaN quantum wells with different morphologies.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 998, doi. 10.1134/S1063782612080192

By:

Shevchenko, E.;
Jmerik, V.;
Mizerov, A.;
Sitnikova, A.;
Ivanov, S.;
Toropov, A.

Publication type:

Article

Electric-field-induced modification of the optical properties of CuI crystals.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 975, doi. 10.1134/S1063782612080076

By:

Gruzintsev, A.;
Zagorodnev, V.

Publication type:

Article

Lasing in spherically shaped YO-ZnO nanocomposites.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1072, doi. 10.1134/S1063782612080064

By:

Gruzintsev, A.;
Emelchenko, G.;
Dulina, N.;
Yermolayeva, Yu.;
Tolmachev, A.

Publication type:

Article

Effect of various treatments on Schottky diode properties.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1085, doi. 10.1134/S1063782612080155

By:

Pashaev, I.

Publication type:

Article

Effect of a transverse electric field on charge carrier mobility in nanowires.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1008, doi. 10.1134/S1063782612080210

By:

Sinyavskii, E.;
Karapetyan, S.

Publication type:

Article

Solubility of sulfur in silicon.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 969, doi. 10.1134/S1063782612080209

By:

Shuman, V.;
Makhova, A.;
Astrov, Yu.;
Ivanov, A.;
Lodygin, A.

Publication type:

Article

Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 993, doi. 10.1134/S1063782612080167

By:

Pavlyk, B.;
Slobodzyan, D.;
Hrypa, A.;
Lys, R.;
Kushlyk, M.;
Shykoryak, J.;
Didyk, R.

Publication type:

Article

Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p-layer.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1079, doi. 10.1134/S1063782612080131

By:

Lenshin, A.;
Kashkarov, V.;
Seredin, P.;
Minakov, D.;
Agapov, B.;
Kuznetsova, M.;
Moshnikov, V.;
Domashevskaya, E.

Publication type:

Article

Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1066, doi. 10.1134/S106378261208009X

By:

Koltsov, G.;
Didenko, S.;
Chernykh, A.;
Chernykh, S.;
Chubenko, A.;
Sveshnikov, Yu.

Publication type:

Article

On the impedance spectroscopy of structures with a potential barrier.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1012, doi. 10.1134/S1063782612080040

By:

Brus, V.

Publication type:

Article

N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1059, doi. 10.1134/S1063782612080027

By:

Aliev, K.;
Kamilov, I.;
Ibragimov, Kh.;
Abakarova, N.

Publication type:

Article

Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1027, doi. 10.1134/S1063782612080246

By:

Zhukov, A.;
Asryan, L.;
Shernyakov, Yu.;
Maximov, M.;
Zubov, F.;
Kryzhanovskaya, N.;
Yvind, K.;
Semenova, E.

Publication type:

Article

Nature of the diamagnetic maximum in the temperature dependences of the magnetic susceptibility of crystals of (BiSb)Te alloys (0 < x < 1).

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 980, doi. 10.1134/S1063782612080234

By:

Stepanov, N.;
Nalivkin, V.;
Gil'fanov, A.

Publication type:

Article

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 971, doi. 10.1134/S1063782612080118

By:

Kovalyuk, Z.;
Boledzyuk, V.;
Shevchyk, V.;
Kaminskii, V.;
Shevchenko, A.

Publication type:

Article

Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1016, doi. 10.1134/S1063782612080052

By:

Chaldyshev, V.;
Kundelev, E.;
Nikitina, E.;
Egorov, A.;
Gorbatsevich, A.

Publication type:

Article

Growth of GeSn solid solution films and study of their structural properties and some of their photoelectric properties.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1088, doi. 10.1134/S1063782612080180

By:

Saidov, A.;
Usmonov, Sh.;
Asatova, U.

Publication type:

Article

Effect of a nonstationary electric field with different front profiles on carbon nanotubes.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1020, doi. 10.1134/S1063782612080179

By:

Sadykov, N.;
Skorkin, N.

Publication type:

Article

High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1040, doi. 10.1134/S106378261208012X

By:

Kryzhanovskaya, N.;
Zhukov, A.;
Nadtochy, A.;
Slovinsky, I.;
Maximov, M.;
Kulagina, M.;
Savelev, A.;
Arakcheeva, E.;
Zadiranov, Yu.;
Troshkov, S.;
Lipovskii, A.

Publication type:

Article

Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 988, doi. 10.1134/S1063782612080106

By:

Komolov, A.;
Lazneva, E.;
Komolov, S.;
Repin, P.;
Gavrikov, A.

Publication type:

Article

Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1044, doi. 10.1134/S1063782612080222

By:

Sokolova, Z.;
Tarasov, I.;
Asryan, L.

Publication type:

Article

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1032, doi. 10.1134/S1063782612080039

By:

Bochkareva, N.;
Voronenkov, V.;
Gorbunov, R.;
Zubrilov, A.;
Latyshev, P.;
Lelikov, Yu.;
Rebane, Yu.;
Tsyuk, A.;
Shreter, Yu.

Publication type:

Article