Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 8
Results: 23
Electric-field-induced modification of the optical properties of CuI crystals.
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- Semiconductors, 2012, v. 46, n. 8, p. 975, doi. 10.1134/S1063782612080076
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Effect of various treatments on Schottky diode properties.
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- Semiconductors, 2012, v. 46, n. 8, p. 1085, doi. 10.1134/S1063782612080155
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Effect of a transverse electric field on charge carrier mobility in nanowires.
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- Semiconductors, 2012, v. 46, n. 8, p. 1008, doi. 10.1134/S1063782612080210
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Solubility of sulfur in silicon.
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- Semiconductors, 2012, v. 46, n. 8, p. 969, doi. 10.1134/S1063782612080209
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Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures.
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- Semiconductors, 2012, v. 46, n. 8, p. 993, doi. 10.1134/S1063782612080167
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Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p-layer.
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- Semiconductors, 2012, v. 46, n. 8, p. 1079, doi. 10.1134/S1063782612080131
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Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons.
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- Semiconductors, 2012, v. 46, n. 8, p. 1066, doi. 10.1134/S106378261208009X
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On the impedance spectroscopy of structures with a potential barrier.
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- Semiconductors, 2012, v. 46, n. 8, p. 1012, doi. 10.1134/S1063782612080040
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N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes.
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- Semiconductors, 2012, v. 46, n. 8, p. 1059, doi. 10.1134/S1063782612080027
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Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers.
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- Semiconductors, 2012, v. 46, n. 8, p. 1027, doi. 10.1134/S1063782612080246
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Nature of the diamagnetic maximum in the temperature dependences of the magnetic susceptibility of crystals of (BiSb)Te alloys (0 < x < 1).
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- Semiconductors, 2012, v. 46, n. 8, p. 980, doi. 10.1134/S1063782612080234
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Ferromagnetism of layered GaSe semiconductors intercalated with cobalt.
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- Semiconductors, 2012, v. 46, n. 8, p. 971, doi. 10.1134/S1063782612080118
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Electrical characteristics of n-GaAs-anode film-GaO-metal structures.
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- Semiconductors, 2012, v. 46, n. 8, p. 1003, doi. 10.1134/S1063782612080088
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Photoelectric determination of the series resistance of multijunction solar cells.
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- Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143
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Effect of a nonstationary electric field with different front profiles on carbon nanotubes.
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- Semiconductors, 2012, v. 46, n. 8, p. 1020, doi. 10.1134/S1063782612080179
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Lasing in spherically shaped YO-ZnO nanocomposites.
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- Semiconductors, 2012, v. 46, n. 8, p. 1072, doi. 10.1134/S1063782612080064
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Quantum-confined stark effect and localization of charge carriers in AlGaN/AlGaN quantum wells with different morphologies.
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- Semiconductors, 2012, v. 46, n. 8, p. 998, doi. 10.1134/S1063782612080192
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High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots.
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- Semiconductors, 2012, v. 46, n. 8, p. 1040, doi. 10.1134/S106378261208012X
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Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide.
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- Semiconductors, 2012, v. 46, n. 8, p. 988, doi. 10.1134/S1063782612080106
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Growth of GeSn solid solution films and study of their structural properties and some of their photoelectric properties.
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- Semiconductors, 2012, v. 46, n. 8, p. 1088, doi. 10.1134/S1063782612080180
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Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells.
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- Semiconductors, 2012, v. 46, n. 8, p. 1016, doi. 10.1134/S1063782612080052
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Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser.
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- Semiconductors, 2012, v. 46, n. 8, p. 1044, doi. 10.1134/S1063782612080222
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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density.
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- Semiconductors, 2012, v. 46, n. 8, p. 1032, doi. 10.1134/S1063782612080039
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