Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 7
Results: 19
Bose condensation of exciton polaritons in microcavities.
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- Semiconductors, 2012, v. 46, n. 7, p. 843, doi. 10.1134/S1063782612070196
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Effect of the tin content on the composition and optical and electrical properties of ITO films deposited onto silicon and glass by ultrasonic spray pyrolysis.
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- Semiconductors, 2012, v. 46, n. 7, p. 962, doi. 10.1134/S1063782612070202
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Intensity of emission from intracenter 4 f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions.
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- Semiconductors, 2012, v. 46, n. 7, p. 901, doi. 10.1134/S1063782612070135
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Changes in the spectra of picosecond stimulated emission from GaAs accompanied by signs of electron-phonon interaction.
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- Semiconductors, 2012, v. 46, n. 7, p. 921, doi. 10.1134/S1063782612070020
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Synthesis and characterization of the as-deposited CdPbS thin films prepared by spray pyrolysis technique.
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- Semiconductors, 2012, v. 46, n. 7, p. 957, doi. 10.1134/S1063782612070111
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Structures with vertically stacked Ge/Si quantum dots for logical operations.
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- Semiconductors, 2012, v. 46, n. 7, p. 937, doi. 10.1134/S1063782612070147
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On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes.
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- Semiconductors, 2012, v. 46, n. 7, p. 913, doi. 10.1134/S1063782612070068
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Role of intrinsic defects in splitting the energy spectra of charge carriers in AgTe.
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- Semiconductors, 2012, v. 46, n. 7, p. 861, doi. 10.1134/S106378261207007X
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Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity.
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- Semiconductors, 2012, v. 46, n. 7, p. 887, doi. 10.1134/S1063782612070172
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Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field.
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- Semiconductors, 2012, v. 46, n. 7, p. 894, doi. 10.1134/S106378261207010X
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Diamagnetic exciton polariton in the interband magnetooptics of semiconductors.
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- Semiconductors, 2012, v. 46, n. 7, p. 873, doi. 10.1134/S1063782612070184
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Resonance states, heavy quasiparticles, and the thermoelectric figure of merit of IV-VI materials.
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- Semiconductors, 2012, v. 46, n. 7, p. 866, doi. 10.1134/S1063782612070160
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Evaluation of the conversion efficiency of thin-film single-junction ( a-Si:H) and tandem (μ c-Si:H + a-Si:H) solar cells by analysis of the experimental dark and load current-voltage ( I-V) characteristics.
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- Semiconductors, 2012, v. 46, n. 7, p. 929, doi. 10.1134/S1063782612070044
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Study of platinum impurity atom state in vitreous arsenic selenide.
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- Semiconductors, 2012, v. 46, n. 7, p. 878, doi. 10.1134/S1063782612070056
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Evidence of the third ( A) level of the mercury vacancy in CdHgTe.
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- Semiconductors, 2012, v. 46, n. 7, p. 882, doi. 10.1134/S1063782612070093
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Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure.
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- Semiconductors, 2012, v. 46, n. 7, p. 917, doi. 10.1134/S1063782612070032
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Influence of irradiation with neutrons on the characteristics of the voltage terminating structure in silicon radiation detectors.
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- Semiconductors, 2012, v. 46, n. 7, p. 948, doi. 10.1134/S1063782612070081
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Influence of the composition on the electrical properties of amorphous chalcogenides AgGeAsS.
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- Semiconductors, 2012, v. 46, n. 7, p. 943, doi. 10.1134/S1063782612070123
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Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface.
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- Semiconductors, 2012, v. 46, n. 7, p. 898, doi. 10.1134/S1063782612070159
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