Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 6
Results: 24
Photosensitive Ox/GaAs heterojunctions: Creation and properties.
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- Semiconductors, 2012, v. 46, n. 6, p. 783, doi. 10.1134/S1063782612060164
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Effect of the temperature during deposition of AlO films by spray pyrolysis on their passivating properties in a silicon solar cell.
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- Semiconductors, 2012, v. 46, n. 6, p. 832, doi. 10.1134/S1063782612060255
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Vanadium deep impurity level in diluted magnetic semiconductors PbSnVTe.
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- Semiconductors, 2012, v. 46, n. 6, p. 741, doi. 10.1134/S106378261206022X
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Effect of diffusion from a lateral surface on the rate of GaN nanowire growth.
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- Semiconductors, 2012, v. 46, n. 6, p. 838, doi. 10.1134/S1063782612060218
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Effect of Pt, Pd, Au additives on the surface and in the bulk of tin dioxide thin films on the electrical and gas-sensitive properties.
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- Semiconductors, 2012, v. 46, n. 6, p. 801, doi. 10.1134/S1063782612060206
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Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100).
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- Semiconductors, 2012, v. 46, n. 6, p. 736, doi. 10.1134/S1063782612060073
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Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode.
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- Semiconductors, 2012, v. 46, n. 6, p. 825, doi. 10.1134/S1063782612060127
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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties.
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- Semiconductors, 2012, v. 46, n. 6, p. 749, doi. 10.1134/S1063782612060097
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Optical transitions in CdHgTe-based quantum wells and their analysis with account for the actual band structure of the material.
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- Semiconductors, 2012, v. 46, n. 6, p. 773, doi. 10.1134/S1063782612060061
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Radiation-induced surface degradation of GaAs and high electron mobility transistor structures.
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- Semiconductors, 2012, v. 46, n. 6, p. 814, doi. 10.1134/S1063782612060085
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Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: I. Phenomenon mechanism.
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- Semiconductors, 2012, v. 46, n. 6, p. 708, doi. 10.1134/S1063782612060036
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Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: II. Comparison with experiment.
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- Semiconductors, 2012, v. 46, n. 6, p. 714, doi. 10.1134/S1063782612060048
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Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys.
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- Semiconductors, 2012, v. 46, n. 6, p. 719, doi. 10.1134/S106378261206019X
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The adsorption effect of CH on density of states for double wall carbon nanotubes by tight binding model.
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- Semiconductors, 2012, v. 46, n. 6, p. 769, doi. 10.1134/S1063782612060103
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Electroluminescence of GaPNAs nanoheterostructures through a transparent electrode made of CVD graphene.
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- Semiconductors, 2012, v. 46, n. 6, p. 796, doi. 10.1134/S106378261206005X
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Interaction of carbon dioxide laser radiation with a nanotube array in the presence of a constant electric field.
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- Semiconductors, 2012, v. 46, n. 6, p. 790, doi. 10.1134/S1063782612060188
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Electron states at electrolyte/ n-GaN and electrolyte/ n-InGaN interfaces.
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- Semiconductors, 2012, v. 46, n. 6, p. 755, doi. 10.1134/S1063782612060176
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Dependence of carrier mobility on an electric field in gallium selenide crystals.
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- Semiconductors, 2012, v. 46, n. 6, p. 730, doi. 10.1134/S1063782612060024
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Current-voltage characteristics of MnGaSe single crystals.
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- Semiconductors, 2012, v. 46, n. 6, p. 701, doi. 10.1134/S1063782612060231
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Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes.
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- Semiconductors, 2012, v. 46, n. 6, p. 810, doi. 10.1134/S1063782612060139
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Optical transitions in MnGaSe.
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- Semiconductors, 2012, v. 46, n. 6, p. 705, doi. 10.1134/S1063782612060243
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Energy structure of non-hydrogen-like impurities in quantum wells without spin-orbit coupling.
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- Semiconductors, 2012, v. 46, n. 6, p. 786, doi. 10.1134/S1063782612060140
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Quantum corrections to conductivity under conditions of the integer quantum Hall effect.
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- Semiconductors, 2012, v. 46, n. 6, p. 759, doi. 10.1134/S1063782612060115
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Creation and studies of the photosensitivity of Ox/ n-GaP structures.
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- Semiconductors, 2012, v. 46, n. 6, p. 779, doi. 10.1134/S1063782612060152
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