Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 6

Results: 24

Photosensitive Ox/GaAs heterojunctions: Creation and properties.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 783, doi. 10.1134/S1063782612060164

By:

Rud', V.;
Rud', Yu.;
Terukov, E.;
Ushakova, T.

Publication type:

Article

Effect of the temperature during deposition of AlO films by spray pyrolysis on their passivating properties in a silicon solar cell.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 832, doi. 10.1134/S1063782612060255

By:

Untila, G.;
Kost, T.;
Chebotareva, A.;
Zaks, M.;
Sitnikov, A.;
Solodukha, O.

Publication type:

Article

Vanadium deep impurity level in diluted magnetic semiconductors PbSnVTe.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 741, doi. 10.1134/S106378261206022X

By:

Skipetrov, E.;
Golovanov, A.;
Knotko, A.;
Slyn'ko, E.;
Slyn'ko, V.

Publication type:

Article

Effect of diffusion from a lateral surface on the rate of GaN nanowire growth.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 838, doi. 10.1134/S1063782612060218

By:

Sibirev, N.;
Tchernycheva, M.;
Cirlin, G.;
Patriarche, G.;
Harmand, J.;
Dubrovskii, V.

Publication type:

Article

Effect of Pt, Pd, Au additives on the surface and in the bulk of tin dioxide thin films on the electrical and gas-sensitive properties.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 801, doi. 10.1134/S1063782612060206

By:

Sevastyanov, E.;
Maksimova, N.;
Novikov, V.;
Rudov, F.;
Sergeychenko, N.;
Chernikov, E.

Publication type:

Article

Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100).

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 736, doi. 10.1134/S1063782612060073

By:

Bezryadin, N.;
Kotov, G.;
Arsentyev, I.;
Vlasov, Yu.;
Starodubtsev, A.

Publication type:

Article

Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 825, doi. 10.1134/S1063782612060127

By:

Klochko, N.;
Khrypunov, G.;
Myagchenko, Yu.;
Melnychuk, E.;
Kopach, V.;
Klepikova, E.;
Lyubov, V.;
Kopach, A.

Publication type:

Article

Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 749, doi. 10.1134/S1063782612060097

By:

Emelyanov, A.;
Kazanskii, A.;
Kashkarov, P.;
Konkov, O.;
Terukov, E.;
Forsh, P.;
Khenkin, M.;
Kukin, A.;
Beresna, M.;
Kazansky, P.

Publication type:

Article

Optical transitions in CdHgTe-based quantum wells and their analysis with account for the actual band structure of the material.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 773, doi. 10.1134/S1063782612060061

By:

Bazhenov, N.;
Shilyaev, A.;
Mynbaev, K.;
Zegrya, G.

Publication type:

Article

Radiation-induced surface degradation of GaAs and high electron mobility transistor structures.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 814, doi. 10.1134/S1063782612060085

By:

Bobyl, A.;
Konnikov, S.;
Ustinov, V.;
Baidakova, M.;
Maleev, N.;
Sakseev, D.;
Konakova, R.;
Milenin, V.;
Prokopenko, I.

Publication type:

Article

Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: I. Phenomenon mechanism.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 708, doi. 10.1134/S1063782612060036

By:

Atakulov, Sh.;
Zainolobidinova, S.;
Nabiev, G.;
Tukhtamatov, O.

Publication type:

Article

Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: II. Comparison with experiment.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 714, doi. 10.1134/S1063782612060048

By:

Atakulov, Sh.;
Zainolobidinova, S.;
Nabiev, G.;
Tukhtamatov, O.

Publication type:

Article

Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 719, doi. 10.1134/S106378261206019X

By:

Seredin, P.;
Glotov, A.;
Domashevskaya, E.;
Lenshin, A.;
Smirnov, M.;
Arsentyev, I.;
Vinokurov, D.;
Stankevich, A.;
Tarasov, I.

Publication type:

Article

The adsorption effect of CH on density of states for double wall carbon nanotubes by tight binding model.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 769, doi. 10.1134/S1063782612060103

By:

Fathalian, A.

Publication type:

Article

Electroluminescence of GaPNAs nanoheterostructures through a transparent electrode made of CVD graphene.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 796, doi. 10.1134/S106378261206005X

By:

Babichev, A.;
Butko, V.;
Sobolev, M.;
Nikitina, E.;
Kryzhanovskaya, N.;
Egorov, A.

Publication type:

Article

Interaction of carbon dioxide laser radiation with a nanotube array in the presence of a constant electric field.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 790, doi. 10.1134/S1063782612060188

By:

Sadykov, N.;
Scorkin, N.

Publication type:

Article

Electron states at electrolyte/ n-GaN and electrolyte/ n-InGaN interfaces.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 755, doi. 10.1134/S1063782612060176

By:

Rudinsky, M.;
Gutkin, A.;
Brunkov, P.

Publication type:

Article

Dependence of carrier mobility on an electric field in gallium selenide crystals.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 730, doi. 10.1134/S1063782612060024

By:

Abdinov, A.;
Babaeva, R.;
Rzayev, R.

Publication type:

Article

Current-voltage characteristics of MnGaSe single crystals.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 701, doi. 10.1134/S1063782612060231

By:

Tagiev, B.;
Tagiev, O.;
Asadullayeva, S.;
Eyyubov, Q.

Publication type:

Article

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 810, doi. 10.1134/S1063782612060139

By:

Rau, E.;
Orlikovskiy, N.;
Ivanova, E.

Publication type:

Article

Optical transitions in MnGaSe.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 705, doi. 10.1134/S1063782612060243

By:

Tagiev, B.;
Kerimova, T.;
Tagiev, O.;
Asadullayeva, S.;
Mamedova, I.

Publication type:

Article

Energy structure of non-hydrogen-like impurities in quantum wells without spin-orbit coupling.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 786, doi. 10.1134/S1063782612060140

By:

Romanov, K.;
Averkiev, N.

Publication type:

Article

Quantum corrections to conductivity under conditions of the integer quantum Hall effect.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 759, doi. 10.1134/S1063782612060115

By:

Greshnov, A.

Publication type:

Article

Creation and studies of the photosensitivity of Ox/ n-GaP structures.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 779, doi. 10.1134/S1063782612060152

By:

Rud', V.;
Rud', Yu.;
Terukov, E.;
Ushakova, T.

Publication type:

Article