Effect of post oxidation annealing on electrical characteristics of Ni/SiO/4 H-SiC capacitor with varying oxide thickness.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 545, doi. 10.1134/S1063782612040070
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 4
Results: 24
1
2
Effect of microwave irradiation on the resistance of Au-TiB-Ge-Au- n- n- n-GaAs(InP) ohmic contacts.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 541, doi. 10.1134/S1063782612040021
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- Publication type:
- Article
3
Electronic properties and deep traps in electron-irradiated n-GaN.
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- Semiconductors, 2012, v. 46, n. 4, p. 433, doi. 10.1134/S1063782612040045
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- Article
4
Comparison of electronic structure of as grown and solar grade silicon samples.
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- Semiconductors, 2012, v. 46, n. 4, p. 440, doi. 10.1134/S1063782612040185
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- Article
5
Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study.
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- Semiconductors, 2012, v. 46, n. 4, p. 471, doi. 10.1134/S1063782612040136
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- Publication type:
- Article
6
Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type.
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- Semiconductors, 2012, v. 46, n. 4, p. 456, doi. 10.1134/S1063782612040069
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- Publication type:
- Article
7
Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts.
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- Semiconductors, 2012, v. 46, n. 4, p. 484, doi. 10.1134/S1063782612040173
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- Publication type:
- Article
8
Photoinduced etching of thin films of chalcogenide glassy semiconductors.
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- Semiconductors, 2012, v. 46, n. 4, p. 504, doi. 10.1134/S1063782612040057
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- Publication type:
- Article
9
Phase transition and correlation effects in vanadium dioxide.
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- Semiconductors, 2012, v. 46, n. 4, p. 422, doi. 10.1134/S1063782612040094
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- Publication type:
- Article
10
Carbazole-containing polyphenylquinolines as a basis for optoelectronic materials with white luminescence.
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- Semiconductors, 2012, v. 46, n. 4, p. 496, doi. 10.1134/S1063782612040215
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- Article
11
Absorptivity of semiconductors used in the production of solar cell panels.
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- Semiconductors, 2012, v. 46, n. 4, p. 466, doi. 10.1134/S1063782612040124
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- Publication type:
- Article
12
Effect of copper doping on kinetic coefficients and their anisotropy in PbSbTe.
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- Semiconductors, 2012, v. 46, n. 4, p. 447, doi. 10.1134/S1063782612040161
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- Publication type:
- Article
13
Effect of γ-ray radiation on electrical properties of heat-treated TbSnSe single crystals.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 430, doi. 10.1134/S1063782612040082
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- Publication type:
- Article
14
Effect of avalanche-type barrier discharge on a silver halide photographic material in the case of blocked ionic conductivity.
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- Semiconductors, 2012, v. 46, n. 4, p. 509, doi. 10.1134/S1063782612040033
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- Publication type:
- Article
15
Subnanosecond 4 H-SiC diode current breakers.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 528, doi. 10.1134/S1063782612040100
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- Publication type:
- Article
16
Structural control over conductivity and conduction type in thin films of polyphenylquinones.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 491, doi. 10.1134/S1063782612040203
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- Publication type:
- Article
17
Formation of anodic layers on InAs (111)III. Study of the chemical composition.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 552, doi. 10.1134/S1063782612040239
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- Publication type:
- Article
18
Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 478, doi. 10.1134/S1063782612040148
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- Publication type:
- Article
19
Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 514, doi. 10.1134/S1063782612040227
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- Publication type:
- Article
20
Operation of a semiconductor opening switch at ultrahigh current densities.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 519, doi. 10.1134/S106378261204015X
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- Publication type:
- Article
21
Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ions.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 452, doi. 10.1134/S1063782612040252
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- Publication type:
- Article
22
Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 535, doi. 10.1134/S1063782612040197
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- Publication type:
- Article
23
Determination of the degree of ordering of materials' structure by calculating the information-correlation characteristics.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 415, doi. 10.1134/S1063782612040240
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- Publication type:
- Article
24
Low-temperature (77-300 K) current-voltage characteristics of 4 H-SiC p- p- n diodes: Effect of impurity breakdown in the p-type base.
- Published in:
- Semiconductors, 2012, v. 46, n. 4, p. 532, doi. 10.1134/S1063782612040112
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- Publication type:
- Article