Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 3
Results: 24
Infrared luminescence from silicon nanostructures heavily doped with boron.
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- Semiconductors, 2012, v. 46, n. 3, p. 275, doi. 10.1134/S1063782612030049
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Surface morphology and electrical properties of Au/Ni/〈C〉/ n-GaO/ p-GaSe〈KNO〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions.
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- Semiconductors, 2012, v. 46, n. 3, p. 342, doi. 10.1134/S1063782612030050
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Effect of erbium fluoride doping on the photoluminescence of SiO films.
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- Semiconductors, 2012, v. 46, n. 3, p. 323, doi. 10.1134/S1063782612030232
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Pulsed laser deposition of ITO thin films and their characteristics.
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- Semiconductors, 2012, v. 46, n. 3, p. 410, doi. 10.1134/S1063782612030256
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Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films.
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- Semiconductors, 2012, v. 46, n. 3, p. 302, doi. 10.1134/S1063782612030062
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Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry.
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- Semiconductors, 2012, v. 46, n. 3, p. 354, doi. 10.1134/S1063782612030244
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Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated SiN by CDLTS.
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- Semiconductors, 2012, v. 46, n. 3, p. 382, doi. 10.1134/S1063782612030104
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Temperature dependence of contact resistance for Au-Ti-PdSi- n-Si ohmic contacts subjected to microwave irradiation.
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- Semiconductors, 2012, v. 46, n. 3, p. 330, doi. 10.1134/S1063782612030074
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Temperature dependence of the contact resistance of ohmic contacts to III-V compounds with a high dislocation density.
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- Semiconductors, 2012, v. 46, n. 3, p. 334, doi. 10.1134/S1063782612030177
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Mapping of two-photon luminescence amplification in zinc-oxide microstructures.
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- Semiconductors, 2012, v. 46, n. 3, p. 360, doi. 10.1134/S1063782612030189
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Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiation.
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- Semiconductors, 2012, v. 46, n. 3, p. 391, doi. 10.1134/S1063782612030116
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Influence of technological defects on the optical and photoelectric properties of AgCdMnGaSe alloys.
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- Semiconductors, 2012, v. 46, n. 3, p. 306, doi. 10.1134/S1063782612030220
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Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors.
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- Semiconductors, 2012, v. 46, n. 3, p. 401, doi. 10.1134/S1063782612030098
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Influence of samarium on the thermoelectric figure of merit of SmPbTe alloys.
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- Semiconductors, 2012, v. 46, n. 3, p. 298, doi. 10.1134/S1063782612030037
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Current-voltage characteristics of MnGaSe single crystals.
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- Semiconductors, 2012, v. 46, n. 3, p. 319, doi. 10.1134/S1063782612030207
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A problem on a dimer adsorbed at single-sheet graphene.
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- Semiconductors, 2012, v. 46, n. 3, p. 363, doi. 10.1134/S1063782612030086
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AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films.
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- Semiconductors, 2012, v. 46, n. 3, p. 369, doi. 10.1134/S1063782612030190
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Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of CdHgTe.
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- Semiconductors, 2012, v. 46, n. 3, p. 293, doi. 10.1134/S1063782612030025
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Leakage currents in 4 H-SiC JBS diodes.
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- Semiconductors, 2012, v. 46, n. 3, p. 397, doi. 10.1134/S106378261203013X
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The effect of irradiation with electrons on the electrical parameters of HgInTe.
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- Semiconductors, 2012, v. 46, n. 3, p. 312, doi. 10.1134/S1063782612030128
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An analytical gate tunneling current model for MOSFETs.
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- Semiconductors, 2012, v. 46, n. 3, p. 386, doi. 10.1134/S1063782612030141
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Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors.
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- Semiconductors, 2012, v. 46, n. 3, p. 374, doi. 10.1134/S1063782612030153
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Specific features of recombination in layered a-Si:H films.
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- Semiconductors, 2012, v. 46, n. 3, p. 315, doi. 10.1134/S1063782612030165
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Concerning the energy levels of silver in Ge-Si alloys.
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- Semiconductors, 2012, v. 46, n. 3, p. 289, doi. 10.1134/S1063782612030219
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