Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 3

Results: 24

Infrared luminescence from silicon nanostructures heavily doped with boron.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 275, doi. 10.1134/S1063782612030049

By:

Bagraev, N.;
Klyachkin, L.;
Kuzmin, R.;
Malyarenko, A.;
Mashkov, V.

Publication type:

Article

Surface morphology and electrical properties of Au/Ni/〈C〉/ n-GaO/ p-GaSe〈KNO〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 342, doi. 10.1134/S1063782612030050

By:

Bakhtinov, A.;
Vodopyanov, V.;
Netyaga, V.;
Kudrynskyi, Z.;
Lytvyn, O.

Publication type:

Article

Effect of erbium fluoride doping on the photoluminescence of SiO films.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 323, doi. 10.1134/S1063782612030232

By:

Vlasenko, N.;
Sopinskii, N.;
Gule, E.;
Strelchuk, V.;
Oleksenko, P.;
Veligura, L.;
Nikolenko, A.;
Mukhlyo, M.

Publication type:

Article

Pulsed laser deposition of ITO thin films and their characteristics.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 410, doi. 10.1134/S1063782612030256

By:

Zuev, D.;
Lotin, A.;
Novodvorsky, O.;
Lebedev, F.;
Khramova, O.;
Petuhov, I.;
Putilin, Ph.;
Shatohin, A.;
Rumyanzeva, M.;
Gaskov, A.

Publication type:

Article

Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 302, doi. 10.1134/S1063782612030062

By:

Belyaev, A.;
Klyui, N.;
Konakova, R.;
Lukyanov, A.;
Danilchenko, B.;
Sveshnikov, J.;
Klyui, A.

Publication type:

Article

Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 354, doi. 10.1134/S1063782612030244

By:

Zhigunov, D.;
Shvydun, N.;
Emelyanov, A.;
Timoshenko, V.;
Kashkarov, P.;
Seminogov, V.

Publication type:

Article

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated SiN by CDLTS.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 382, doi. 10.1134/S1063782612030104

By:

Gassoumi, M.;
Grimbert, B.;
Gaquiere, C.;
Maaref, H.

Publication type:

Article

Temperature dependence of contact resistance for Au-Ti-PdSi- n-Si ohmic contacts subjected to microwave irradiation.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 330, doi. 10.1134/S1063782612030074

By:

Belyaev, A.;
Boltovets, N.;
Konakova, R.;
Kudryk, Ya.;
Sachenko, A.;
Sheremet, V.;
Vinogradov, A.

Publication type:

Article

Temperature dependence of the contact resistance of ohmic contacts to III-V compounds with a high dislocation density.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 334, doi. 10.1134/S1063782612030177

By:

Sachenko, A.;
Belyaev, A.;
Bobyl, A.;
Boltovets, N.;
Ivanov, V.;
Kapitanchuk, L.;
Konakova, R.;
Kudryk, Ya.;
Milenin, V.;
Novitskii, S.;
Sakseev, D.;
Tarasov, I.;
Sheremet, V.;
Yagovkina, M.

Publication type:

Article

Mapping of two-photon luminescence amplification in zinc-oxide microstructures.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 360, doi. 10.1134/S1063782612030189

By:

Semin, S.;
Sherstyuk, N.;
Mishina, E.;
Gherman, C.;
Kulyuk, L.;
Rasing, Th.;
Peng, L.

Publication type:

Article

Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiation.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 391, doi. 10.1134/S1063782612030116

By:

Gazizov, I.;
Zaletin, V.;
Kukushkin, V.;
Kuznetsov, M.;
Lisitsky, I.

Publication type:

Article

Influence of technological defects on the optical and photoelectric properties of AgCdMnGaSe alloys.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 306, doi. 10.1134/S1063782612030220

By:

Tretyak, A.;
Davydyuk, H.;
Bozhko, V.;
Bulatetska, L.;
Parasyuk, O.

Publication type:

Article

Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 401, doi. 10.1134/S1063782612030098

By:

Fominski, V.;
Grigoriev, S.;
Romanov, R.;
Zuev, V.;
Grigoriev, V.

Publication type:

Article

Influence of samarium on the thermoelectric figure of merit of SmPbTe alloys.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 298, doi. 10.1134/S1063782612030037

By:

Aliev, F.;
Hasanov, H.

Publication type:

Article

Current-voltage characteristics of MnGaSe single crystals.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 319, doi. 10.1134/S1063782612030207

By:

Tagiev, B.;
Tagiev, O.;
Asadullayeva, S.;
Eyyubov, Q.

Publication type:

Article

A problem on a dimer adsorbed at single-sheet graphene.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 363, doi. 10.1134/S1063782612030086

By:

Davydov, S.

Publication type:

Article

AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 369, doi. 10.1134/S1063782612030190

By:

Smirnova, I.;
Markov, L.;
Pavlyuchenko, A.;
Kukushkin, M.

Publication type:

Article

Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of CdHgTe.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 293, doi. 10.1134/S1063782612030025

By:

Aliev, S.;
Zulfigarov, E.;
Selim-zade, R.

Publication type:

Article

Leakage currents in 4 H-SiC JBS diodes.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 397, doi. 10.1134/S106378261203013X

By:

Ivanov, P.;
Grekhov, I.;
Potapov, A.;
Kon'kov, O.;
Il'inskaya, N.;
Samsonova, T.;
Korol'kov, O.;
Sleptsuk, N.

Publication type:

Article

Concerning the energy levels of silver in Ge-Si alloys.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 289, doi. 10.1134/S1063782612030219

By:

Tahirov, V.;
Agamaliev, Z.;
Sadixova, S.;
Guliev, A.;
Gahramanov, N.

Publication type:

Article

An analytical gate tunneling current model for MOSFETs.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 386, doi. 10.1134/S1063782612030141

By:

Kazerouni, Iman;
Hosseini, Seyed

Publication type:

Article

Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 374, doi. 10.1134/S1063782612030153

By:

Kosyachenko, L.;
Sklyarchuk, V.;
Melnychuk, S.;
Maslyanchuk, O.;
Grushko, E.;
Sklyarchuk, O.

Publication type:

Article

Specific features of recombination in layered a-Si:H films.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 315, doi. 10.1134/S1063782612030165

By:

Kurova, I.;
Ormont, N.

Publication type:

Article

The effect of irradiation with electrons on the electrical parameters of HgInTe.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 312, doi. 10.1134/S1063782612030128

By:

Grushka, O.;
Maslyuk, V.;
Chupyra, S.;
Mysliuk, O.;
Bilichuk, S.;
Zabolotskiy, I.

Publication type:

Article