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Results: 24

Infrared luminescence from silicon nanostructures heavily doped with boron.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 275, doi. 10.1134/S1063782612030049
By:
- Bagraev, N.;
- Klyachkin, L.;
- Kuzmin, R.;
- Malyarenko, A.;
- Mashkov, V.
Publication type:
Article
Surface morphology and electrical properties of Au/Ni/〈C〉/ n-GaO/ p-GaSe〈KNO〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 342, doi. 10.1134/S1063782612030050
By:
- Bakhtinov, A.;
- Vodopyanov, V.;
- Netyaga, V.;
- Kudrynskyi, Z.;
- Lytvyn, O.
Publication type:
Article
Effect of erbium fluoride doping on the photoluminescence of SiO films.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 323, doi. 10.1134/S1063782612030232
By:
- Vlasenko, N.;
- Sopinskii, N.;
- Gule, E.;
- Strelchuk, V.;
- Oleksenko, P.;
- Veligura, L.;
- Nikolenko, A.;
- Mukhlyo, M.
Publication type:
Article
Pulsed laser deposition of ITO thin films and their characteristics.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 410, doi. 10.1134/S1063782612030256
By:
- Zuev, D.;
- Lotin, A.;
- Novodvorsky, O.;
- Lebedev, F.;
- Khramova, O.;
- Petuhov, I.;
- Putilin, Ph.;
- Shatohin, A.;
- Rumyanzeva, M.;
- Gaskov, A.
Publication type:
Article
Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 302, doi. 10.1134/S1063782612030062
By:
- Belyaev, A.;
- Klyui, N.;
- Konakova, R.;
- Lukyanov, A.;
- Danilchenko, B.;
- Sveshnikov, J.;
- Klyui, A.
Publication type:
Article
Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 354, doi. 10.1134/S1063782612030244
By:
- Zhigunov, D.;
- Shvydun, N.;
- Emelyanov, A.;
- Timoshenko, V.;
- Kashkarov, P.;
- Seminogov, V.
Publication type:
Article
Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated SiN by CDLTS.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 382, doi. 10.1134/S1063782612030104
By:
- Gassoumi, M.;
- Grimbert, B.;
- Gaquiere, C.;
- Maaref, H.
Publication type:
Article
Temperature dependence of contact resistance for Au-Ti-PdSi- n-Si ohmic contacts subjected to microwave irradiation.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 330, doi. 10.1134/S1063782612030074
By:
- Belyaev, A.;
- Boltovets, N.;
- Konakova, R.;
- Kudryk, Ya.;
- Sachenko, A.;
- Sheremet, V.;
- Vinogradov, A.
Publication type:
Article
Temperature dependence of the contact resistance of ohmic contacts to III-V compounds with a high dislocation density.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 334, doi. 10.1134/S1063782612030177
By:
- Sachenko, A.;
- Belyaev, A.;
- Bobyl, A.;
- Boltovets, N.;
- Ivanov, V.;
- Kapitanchuk, L.;
- Konakova, R.;
- Kudryk, Ya.;
- Milenin, V.;
- Novitskii, S.;
- Sakseev, D.;
- Tarasov, I.;
- Sheremet, V.;
- Yagovkina, M.
Publication type:
Article
Mapping of two-photon luminescence amplification in zinc-oxide microstructures.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 360, doi. 10.1134/S1063782612030189
By:
- Semin, S.;
- Sherstyuk, N.;
- Mishina, E.;
- Gherman, C.;
- Kulyuk, L.;
- Rasing, Th.;
- Peng, L.
Publication type:
Article
Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiation.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 391, doi. 10.1134/S1063782612030116
By:
- Gazizov, I.;
- Zaletin, V.;
- Kukushkin, V.;
- Kuznetsov, M.;
- Lisitsky, I.
Publication type:
Article
Influence of technological defects on the optical and photoelectric properties of AgCdMnGaSe alloys.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 306, doi. 10.1134/S1063782612030220
By:
- Tretyak, A.;
- Davydyuk, H.;
- Bozhko, V.;
- Bulatetska, L.;
- Parasyuk, O.
Publication type:
Article
Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 401, doi. 10.1134/S1063782612030098
By:
- Fominski, V.;
- Grigoriev, S.;
- Romanov, R.;
- Zuev, V.;
- Grigoriev, V.
Publication type:
Article
Influence of samarium on the thermoelectric figure of merit of SmPbTe alloys.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 298, doi. 10.1134/S1063782612030037
By:
- Aliev, F.;
- Hasanov, H.
Publication type:
Article
Current-voltage characteristics of MnGaSe single crystals.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 319, doi. 10.1134/S1063782612030207
By:
- Tagiev, B.;
- Tagiev, O.;
- Asadullayeva, S.;
- Eyyubov, Q.
Publication type:
Article
A problem on a dimer adsorbed at single-sheet graphene.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 363, doi. 10.1134/S1063782612030086
By:
- Davydov, S.
Publication type:
Article
AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 369, doi. 10.1134/S1063782612030190
By:
- Smirnova, I.;
- Markov, L.;
- Pavlyuchenko, A.;
- Kukushkin, M.
Publication type:
Article
Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of CdHgTe.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 293, doi. 10.1134/S1063782612030025
By:
- Aliev, S.;
- Zulfigarov, E.;
- Selim-zade, R.
Publication type:
Article
Leakage currents in 4 H-SiC JBS diodes.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 397, doi. 10.1134/S106378261203013X
By:
- Ivanov, P.;
- Grekhov, I.;
- Potapov, A.;
- Kon'kov, O.;
- Il'inskaya, N.;
- Samsonova, T.;
- Korol'kov, O.;
- Sleptsuk, N.
Publication type:
Article
The effect of irradiation with electrons on the electrical parameters of HgInTe.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 312, doi. 10.1134/S1063782612030128
By:
- Grushka, O.;
- Maslyuk, V.;
- Chupyra, S.;
- Mysliuk, O.;
- Bilichuk, S.;
- Zabolotskiy, I.
Publication type:
Article
An analytical gate tunneling current model for MOSFETs.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 386, doi. 10.1134/S1063782612030141
By:
- Kazerouni, Iman;
- Hosseini, Seyed
Publication type:
Article
Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 374, doi. 10.1134/S1063782612030153
By:
- Kosyachenko, L.;
- Sklyarchuk, V.;
- Melnychuk, S.;
- Maslyanchuk, O.;
- Grushko, E.;
- Sklyarchuk, O.
Publication type:
Article
Specific features of recombination in layered a-Si:H films.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 315, doi. 10.1134/S1063782612030165
By:
- Kurova, I.;
- Ormont, N.
Publication type:
Article
Concerning the energy levels of silver in Ge-Si alloys.
Published in:
Semiconductors, 2012, v. 46, n. 3, p. 289, doi. 10.1134/S1063782612030219
By:
- Tahirov, V.;
- Agamaliev, Z.;
- Sadixova, S.;
- Guliev, A.;
- Gahramanov, N.
Publication type:
Article