Optical monitoring of technological parameters during molecular-beam epitaxy.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1471, doi. 10.1134/S1063782612120214
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 12
Results: 15
1
2
High-temperature ferromagnetism of SiMn films fabricated by laser deposition using the droplet velocity separation technique.
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- Semiconductors, 2012, v. 46, n. 12, p. 1510, doi. 10.1134/S1063782612120123
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- Publication type:
- Article
3
Highly conducting and transparent GaO doped ZnO thin films prepared by thermal evaporation method.
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- Semiconductors, 2012, v. 46, n. 12, p. 1545, doi. 10.1134/S1063782612120135
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- Publication type:
- Article
4
GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1518, doi. 10.1134/S1063782612120056
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- Publication type:
- Article
5
Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1539, doi. 10.1134/S1063782612120184
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- Publication type:
- Article
6
New system of self-assembled GaSb/GaP quantum dots.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
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- Publication type:
- Article
7
Photoinduced and equilibrium optical absorption in Ge/Si quantum dots.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1529, doi. 10.1134/S1063782612120226
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- Publication type:
- Article
8
Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1481, doi. 10.1134/S1063782612120238
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- Publication type:
- Article
9
Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity.
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- Semiconductors, 2012, v. 46, n. 12, p. 1493, doi. 10.1134/S106378261212024X
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- Publication type:
- Article
10
Generation of frequency-tunable far-infrared and terahertz radiation by optical nutations at intraband transitions in asymmetric semiconductor nanoheterostructures.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1487, doi. 10.1134/S106378261212010X
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- Publication type:
- Article
11
Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1476, doi. 10.1134/S106378261212007X
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- Publication type:
- Article
12
Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1497, doi. 10.1134/S1063782612120160
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- Publication type:
- Article
13
Spin properties of trions in a dense quasi-2D electron gas.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1502, doi. 10.1134/S1063782612120081
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- Publication type:
- Article
14
Effect of He ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1506, doi. 10.1134/S1063782612120068
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- Publication type:
- Article
15
Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures.
- Published in:
- Semiconductors, 2012, v. 46, n. 12, p. 1524, doi. 10.1134/S1063782612120172
- By:
- Publication type:
- Article