Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 11
Results: 22
Parametric generation of high-frequency harmonics in semiconductor superlattices.
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- Semiconductors, 2012, v. 46, n. 11, p. 1451, doi. 10.1134/S1063782612110164
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Study of lifetimes and photoconductivity relaxation in heterostructures with HgCdTe/CdHgTe quantum wells.
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- Semiconductors, 2012, v. 46, n. 11, p. 1362, doi. 10.1134/S1063782612110139
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Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier.
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- Semiconductors, 2012, v. 46, n. 11, p. 1396, doi. 10.1134/S1063782612110206
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Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods.
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- Semiconductors, 2012, v. 46, n. 11, p. 1376, doi. 10.1134/S1063782612110127
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Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands.
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- Semiconductors, 2012, v. 46, n. 11, p. 1418, doi. 10.1134/S1063782612110115
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Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix.
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- Semiconductors, 2012, v. 46, n. 11, p. 1460, doi. 10.1134/S1063782612110218
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Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers.
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- Semiconductors, 2012, v. 46, n. 11, p. 1367, doi. 10.1134/S106378261211019X
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Electro-optical trap for dipolar excitons.
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- Semiconductors, 2012, v. 46, n. 11, p. 1423, doi. 10.1134/S1063782612110085
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On the problem of lasing in traps for the bose condensation of dipolar excitons.
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- Semiconductors, 2012, v. 46, n. 11, p. 1351, doi. 10.1134/S1063782612110097
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Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping.
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- Semiconductors, 2012, v. 46, n. 11, p. 1407, doi. 10.1134/S1063782612110231
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Features of impurity-photoconductivity relaxation in boron-doped silicon.
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- Semiconductors, 2012, v. 46, n. 11, p. 1387, doi. 10.1134/S1063782612110188
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Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry.
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- Semiconductors, 2012, v. 46, n. 11, p. 1392, doi. 10.1134/S1063782612110061
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Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals.
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- Semiconductors, 2012, v. 46, n. 11, p. 1432, doi. 10.1134/S106378261211005X
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Prototypes of photovoltaic cells based on subphthalocyanine with a lower buffer layer.
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- Semiconductors, 2012, v. 46, n. 11, p. 1381, doi. 10.1134/S1063782612110152
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Diagnostics of quantum cascade structures by optical methods in the near infrared region.
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- Semiconductors, 2012, v. 46, n. 11, p. 1411, doi. 10.1134/S1063782612110103
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Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots.
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- Semiconductors, 2012, v. 46, n. 11, p. 1415, doi. 10.1134/S1063782612110048
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Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells.
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- Semiconductors, 2012, v. 46, n. 11, p. 1402, doi. 10.1134/S106378261211022X
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Tunneling and current characteristics of two-miniband superlattice.
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- Semiconductors, 2012, v. 46, n. 11, p. 1443, doi. 10.1134/S1063782612110176
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Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation.
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- Semiconductors, 2012, v. 46, n. 11, p. 1372, doi. 10.1134/S1063782612110036
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Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers.
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- Semiconductors, 2012, v. 46, n. 11, p. 1358, doi. 10.1134/S1063782612110140
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Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy.
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- Semiconductors, 2012, v. 46, n. 11, p. 1429, doi. 10.1134/S1063782612110024
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Investigation of the structure of the ground state of lithium donor centers in silicon enriched in Si isotope and the influence of internal strain in the crystal on this structure.
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- Semiconductors, 2012, v. 46, n. 11, p. 1437, doi. 10.1134/S1063782612110073
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