Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 10

Results: 21

Device characteristics of long-wavelength lasers based on self-organized quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1225, doi. 10.1134/S1063782612100223

By:

Zhukov, A.;
Maksimov, M.;
Kovsh, A.

Publication type:

Article

Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065

By:

Izhnin, I.;
Mynbaev, K.;
Yakushev, M.;
Izhnin, A.;
Fitsych, E.;
Bazhenov, N.;
Shilyaev, A.;
Savitskyy, H.;
Jakiela, R.;
Sorochkin, A.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1316, doi. 10.1134/S1063782612100077

By:

Kabanov, V.;
Lebiadok, Ye.;
Ryabtsev, G.;
Smal, A.;
Shchemelev, M.;
Vinokurov, D.;
Slipchenko, S.;
Sokolova, Z.;
Tarasov, I.

Publication type:

Article

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1281, doi. 10.1134/S1063782612100168

By:

Tsatsulnikov, A.;
Lundin, W.;
Zavarin, E.;
Nikolaev, A.;
Sakharov, A.;
Rozhavskaya, M.;
Usov, S.;
Brunkov, P.;
Synitsin, M.;
Davydov, D.;
Mizerov, M.;
Cherkashin, N.

Publication type:

Article

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089

By:

Lukin, P.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1310, doi. 10.1134/S1063782612100041

By:

Chen, Huanting;
Keppens, Arno;
Hanselaer, Peter;
Lu, Yijun;
Gao, Yulin;
Zhuang, Rongrong;
Chen, Zhong

Publication type:

Article

InGaN/GaN heterostructures grown by submonolayer deposition.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X

By:

Tsatsulnikov, A.;
Lundin, W.;
Zavarin, E.;
Sakharov, A.;
Musikhin, Yu.;
Usov, S.;
Mizerov, M.;
Cherkashin, N.

Publication type:

Article

Influence of source-to-substrate distance on the properties of ZnS films grown by close-space sublimation.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1326, doi. 10.1134/S106378261210003X

By:

Ashrat, M.;
Mehmood, M.;
Qayyum, A.

Publication type:

Article

Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1331, doi. 10.1134/S1063782612100132

By:

Shernyakov, Yu.;
Maksimov, M.;
Zhukov, A.;
Savelyev, A.;
Korenev, V.;
Zubov, F.;
Gordeev, N.;
Livshits, D.

Publication type:

Article

Creation and photoelectric properties of Ox/ p-InAs heterostructures.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1270, doi. 10.1134/S1063782612100120

By:

Rud', V.;
Rud', Yu.;
Terukov, E.;
Ushakova, T.;
Serginov, M.

Publication type:

Article

Small-signal field effect in GaAs/InAs quantum-dot heterostructures.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1274, doi. 10.1134/S1063782612100144

By:

Tikhov, S.

Publication type:

Article

On the active conductivity of a three-barrier resonant-tunneling structure and optimization of quantum cascade laser operation.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1304, doi. 10.1134/S1063782612100156

By:

Tkach, N.;
Seti, Ju.;
Matijek, V.;
Boyko, I.

Publication type:

Article

Transport phenomena in the anisotropic layered compounds MeBiTe (Me = Ge, Pb, Sn).

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1256, doi. 10.1134/S1063782612100211

By:

Zhitinskaya, M.;
Nemov, S.;
Blagih, N.;
Shelimova, L.;
Svechnikova, T.

Publication type:

Article

850-nm diode lasers based on AlGaAsP/GaAs heterostructures.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1321, doi. 10.1134/S106378261210020X

By:

Vinokurov, D.;
Kapitonov, V.;
Lyutetskiy, A.;
Nikolaev, D.;
Pikhtin, N.;
Slipchenko, S.;
Stankevich, A.;
Shamakhov, V.;
Vavilova, L.;
Tarasov, I.

Publication type:

Article

Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1299, doi. 10.1134/S1063782612100119

By:

Pardeshi, Hemant;
Raj, Godwin;
Pati, Sudhansu;
Mohankumar, N.;
Sarkar, Chandan

Publication type:

Article

On superparamagnetism in quasi-one-dimensional semiconductor antiferromagnets TlFeS and TlFeSe.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1263, doi. 10.1134/S1063782612100193

By:

Veliyev, R.

Publication type:

Article

Isochronous annealing of n-Si samples irradiated with 25-MeV protons.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1251, doi. 10.1134/S1063782612100107

By:

Pagava, T.;
Beridze, M.;
Maisuradze, N.

Publication type:

Article

Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1286, doi. 10.1134/S1063782612100181

By:

Tyschenko, I.;
Volodin, V.

Publication type:

Article

Study of the impurity photoconductivity and luminescence in ZnSe:Ni crystals in the visible spectral region.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1265, doi. 10.1134/S1063782612100090

By:

Nitsuk, Yu.;
Vaksman, Yu.;
Yatsun, V.

Publication type:

Article

Growth of 4 H silicon carbide crystals on a (11 $$ \bar 2 $$2) seed.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1346, doi. 10.1134/S1063782612100053

By:

Fadeev, A.;
Lebedev, A.;
Tairov, Yu.

Publication type:

Article

Inversion of the impurity conductivity sign in AsSe:Bi films deposited by two different methods.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1296, doi. 10.1134/S1063782612100028

By:

Almasov, N.;
Prikhodko, O.;
Tsendin, K.

Publication type:

Article