Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 8

Results: 23

Dispersion of the refractive index of epitaxial PbEuTe (0 ≤ x ≤ 1) alloy layers below the absorption edge.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 980, doi. 10.1134/S1063782611080148

By:

Pashkeev, D.;
Selivanov, Yu.;
Chizhevskii, E.;
Stavrovskii, D.;
Zasavitskiy, I.

Publication type:

Article

Photosensitive thin-film In/ p-PbSnS Schottky barriers: Fabrication and properties.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1053, doi. 10.1134/S1063782611080094

By:

Gremenok, V.;
Rud', V.;
Rud', Yu.;
Bashkirov, S.;
Ivanov, V.

Publication type:

Article

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1038, doi. 10.1134/S1063782611080124

By:

Kononov, N.;
Dorofeev, S.;
Ishchenko, A.;
Mironov, R.;
Plotnichenko, V.;
Dianov, E.

Publication type:

Article

Study of the influence of the sulfide and ultraviolet treatment of the n- i-GaAs surface on the parameters of ohmic contacts.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1026, doi. 10.1134/S1063782611080033

By:

Avdeev, S.;
Erofeev, E.;
Kagadei, V.

Publication type:

Article

Electrical properties of thin-film composites based on silicon and polypropylene.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1085, doi. 10.1134/S1063782611080070

By:

Gasanli, Sh.;
Imanova, A.;
Samedova, U.

Publication type:

Article

The nature of electrical interaction of Schottky contacts.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1009, doi. 10.1134/S1063782611080227

By:

Torkhov, N.

Publication type:

Article

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1064, doi. 10.1134/S1063782611080203

By:

Sobolev, M.;
Gadzhiev, I.;
Bakshaev, I.;
Nevedomskii, V.;
Buyalo, M.;
Zadiranov, Yu.;
Portnoi, E.

Publication type:

Article

Electronic states in epitaxial graphene fabricated on silicon carbide.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1070, doi. 10.1134/S1063782611080057

By:

Davydov, S.

Publication type:

Article

GaO films formed by electrochemical oxidation.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1097, doi. 10.1134/S1063782611080112

By:

Kalygina, V.;
Zarubin, A.;
Nayden, Ye.;
Novikov, V.;
Petrova, Y.;
Tolbanov, O.;
Tyazhev, A.;
Yaskevich, T.

Publication type:

Article

Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1103, doi. 10.1134/S1063782611080239

By:

Zharova, Yu.;
Fedulova, G.;
Astrova, E.;
Baldycheva, A.;
Tolmachev, V.;
Perova, T.

Publication type:

Article

Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1059, doi. 10.1134/S106378261108015X

By:

Ryabchikov, Yu.;
Belogorokhov, I.;
Gongalskii, M.;
Osminkina, L.;
Timoshenko, V.

Publication type:

Article

Piezoelectric effect in GaAs nanowires.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1082, doi. 10.1134/S1063782611080215

By:

Soshnikov, I.;
Afanas'ev, Dm.;
Petrov, V.;
Cirlin, G.;
Bouravlev, A.;
Samsonenko, Yu.;
Khrebtov, A.;
Tanklevskaya, E.;
Seleznev, I.

Publication type:

Article

Superionic conductivity in TlGaTe crystals.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 975, doi. 10.1134/S1063782611080161

By:

Sardarli, R.;
Samedov, O.;
Abdullayev, A.;
Huseynov, E.;
Qocayev, E.;
Salmanov, F.

Publication type:

Article

Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1032, doi. 10.1134/S1063782611080185

By:

Sinyavskii, E.;
Karapetyan, S.

Publication type:

Article

Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1049, doi. 10.1134/S1063782611080082

By:

Golubok, A.;
Samsonenko, Yu.;
Mukhin, I.;
Buravlev, A.;
Cirlin, G.

Publication type:

Article

Photoluminescence in silicon implanted with erbium ions at an elevated temperature.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1006, doi. 10.1134/S1063782611080197

By:

Sobolev, N.;
Kalyadin, A.;
Shek, E.;
Sakharov, V.;
Serenkov, I.;
Vdovin, V.;
Parshin, E.;
Makoviichuk, M.

Publication type:

Article

Mechanisms of charge transport in anisotype n-TiO/ p-CdTe heterojunctions.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1077, doi. 10.1134/S1063782611080045

By:

Brus, V.;
Ilashchuk, M.;
Kovalyuk, Z.;
Maryanchuk, P.;
Ulyanytsky, K.;
Gritsyuk, B.

Publication type:

Article

Eddy currents appearing in a p- n junction in a high microwave field.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1035, doi. 10.1134/S1063782611080173

By:

Shamirzaev, S.;
Gulyamov, G.;
Dadamirzaev, M.;
Gulyamov, A.

Publication type:

Article

Anodization of nanoscale Si layers in silicon-on-insulator structures.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1089, doi. 10.1134/S1063782611080021

By:

Antonov, V.;
Spesivtsev, E.;
Tyschenko, I.

Publication type:

Article

Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 998, doi. 10.1134/S1063782611080136

By:

Mehrabova, M.;
Madatov, R.

Publication type:

Article

Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF impurities.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 993, doi. 10.1134/S1063782611080100

By:

Isayev, A.;
Mekhtiyeva, S.;
Garibova, S.;
Alekperov, R.;
Zeynalov, V.

Publication type:

Article

Doping of the BiSbTe solid solution with Sn impurity.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 988, doi. 10.1134/S1063782611080240

By:

Zhitinskaya, M.;
Nemov, S.;
Muhtarov, V.;
Svechnikova, T.

Publication type:

Article

Treatment of the surface of blanks for fabrication of CdZnTe-based detectors.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1094, doi. 10.1134/S1063782611080069

By:

Fedorenko, O.;
Dubina, N.;
Khristyan, V.;
Terzin, I.

Publication type:

Article