Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 8
Results: 23
Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles.
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- Semiconductors, 2011, v. 45, n. 8, p. 1038, doi. 10.1134/S1063782611080124
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Photosensitive thin-film In/ p-PbSnS Schottky barriers: Fabrication and properties.
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- Semiconductors, 2011, v. 45, n. 8, p. 1053, doi. 10.1134/S1063782611080094
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Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field.
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- Semiconductors, 2011, v. 45, n. 8, p. 1064, doi. 10.1134/S1063782611080203
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Electronic states in epitaxial graphene fabricated on silicon carbide.
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- Semiconductors, 2011, v. 45, n. 8, p. 1070, doi. 10.1134/S1063782611080057
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GaO films formed by electrochemical oxidation.
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- Semiconductors, 2011, v. 45, n. 8, p. 1097, doi. 10.1134/S1063782611080112
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Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon.
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- Semiconductors, 2011, v. 45, n. 8, p. 1103, doi. 10.1134/S1063782611080239
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- Article
Study of the influence of the sulfide and ultraviolet treatment of the n- i-GaAs surface on the parameters of ohmic contacts.
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- Semiconductors, 2011, v. 45, n. 8, p. 1026, doi. 10.1134/S1063782611080033
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Piezoelectric effect in GaAs nanowires.
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- Semiconductors, 2011, v. 45, n. 8, p. 1082, doi. 10.1134/S1063782611080215
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Superionic conductivity in TlGaTe crystals.
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- Semiconductors, 2011, v. 45, n. 8, p. 975, doi. 10.1134/S1063782611080161
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Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals.
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- Semiconductors, 2011, v. 45, n. 8, p. 1059, doi. 10.1134/S106378261108015X
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Dispersion of the refractive index of epitaxial PbEuTe (0 ≤ x ≤ 1) alloy layers below the absorption edge.
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- Semiconductors, 2011, v. 45, n. 8, p. 980, doi. 10.1134/S1063782611080148
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Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties.
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- Semiconductors, 2011, v. 45, n. 8, p. 1049, doi. 10.1134/S1063782611080082
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Photoluminescence in silicon implanted with erbium ions at an elevated temperature.
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- Semiconductors, 2011, v. 45, n. 8, p. 1006, doi. 10.1134/S1063782611080197
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- Article
Mechanisms of charge transport in anisotype n-TiO/ p-CdTe heterojunctions.
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- Semiconductors, 2011, v. 45, n. 8, p. 1077, doi. 10.1134/S1063782611080045
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Eddy currents appearing in a p- n junction in a high microwave field.
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- Semiconductors, 2011, v. 45, n. 8, p. 1035, doi. 10.1134/S1063782611080173
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Anodization of nanoscale Si layers in silicon-on-insulator structures.
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- Semiconductors, 2011, v. 45, n. 8, p. 1089, doi. 10.1134/S1063782611080021
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Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors.
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- Semiconductors, 2011, v. 45, n. 8, p. 998, doi. 10.1134/S1063782611080136
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Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF impurities.
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- Semiconductors, 2011, v. 45, n. 8, p. 993, doi. 10.1134/S1063782611080100
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- Article
Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field.
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- Semiconductors, 2011, v. 45, n. 8, p. 1032, doi. 10.1134/S1063782611080185
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Electrical properties of thin-film composites based on silicon and polypropylene.
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- Semiconductors, 2011, v. 45, n. 8, p. 1085, doi. 10.1134/S1063782611080070
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The nature of electrical interaction of Schottky contacts.
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- Semiconductors, 2011, v. 45, n. 8, p. 1009, doi. 10.1134/S1063782611080227
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Doping of the BiSbTe solid solution with Sn impurity.
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- Semiconductors, 2011, v. 45, n. 8, p. 988, doi. 10.1134/S1063782611080240
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Treatment of the surface of blanks for fabrication of CdZnTe-based detectors.
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- Semiconductors, 2011, v. 45, n. 8, p. 1094, doi. 10.1134/S1063782611080069
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