Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 6
Results: 25
Fabrication of ordered GaAs nanowhiskers using electron-beam lithography.
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- Semiconductors, 2011, v. 45, n. 6, p. 822, doi. 10.1134/S1063782611060236
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- Article
Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures.
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- Semiconductors, 2011, v. 45, n. 6, p. 753, doi. 10.1134/S1063782611060121
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- Article
Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO/ZrO system containing Si nanoclusters.
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- Semiconductors, 2011, v. 45, n. 6, p. 731, doi. 10.1134/S1063782611060108
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- Article
Model of boron diffusion from gas phase in silicon carbide.
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- Semiconductors, 2011, v. 45, n. 6, p. 705, doi. 10.1134/S1063782611060029
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- Article
Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys.
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- Semiconductors, 2011, v. 45, n. 6, p. 771, doi. 10.1134/S1063782611060145
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- Article
Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds.
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- Semiconductors, 2011, v. 45, n. 6, p. 811, doi. 10.1134/S1063782611060078
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- Article
Fabrication of improved-quality seed crystals for growth of bulk silicon carbide.
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- Semiconductors, 2011, v. 45, n. 6, p. 828, doi. 10.1134/S1063782611060157
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- Article
High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems.
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- Semiconductors, 2011, v. 45, n. 6, p. 792, doi. 10.1134/S106378261106011X
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- Article
Drift velocity of electrons in quantum wells of selectively doped InGaAs/AlInAs and InGaAs/AlGaAs heterostructures in high electric fields.
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- Semiconductors, 2011, v. 45, n. 6, p. 761, doi. 10.1134/S1063782611060212
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- Article
Physical properties of SnS thin films fabricated by hot wall deposition.
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- Semiconductors, 2011, v. 45, n. 6, p. 749, doi. 10.1134/S1063782611060030
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- Article
Anomalous long-term degradation of photoluminescence in porous silicon layers.
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- Semiconductors, 2011, v. 45, n. 6, p. 788, doi. 10.1134/S1063782611060248
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- Article
Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells.
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- Semiconductors, 2011, v. 45, n. 6, p. 798, doi. 10.1134/S1063782611060170
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- Article
Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology.
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- Semiconductors, 2011, v. 45, n. 6, p. 805, doi. 10.1134/S1063782611060091
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- Article
Excitonic spectrum of the ZnO/ZnMgO quantum wells.
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- Semiconductors, 2011, v. 45, n. 6, p. 766, doi. 10.1134/S1063782611060042
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- Article
Electronic structure and spectral characteristics of Zn-substituted clathrate silicides.
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- Semiconductors, 2011, v. 45, n. 6, p. 713, doi. 10.1134/S1063782611060066
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- Article
Resonance propagation of electrons through three-barrier structures in a two-frequency electric field.
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- Semiconductors, 2011, v. 45, n. 6, p. 743, doi. 10.1134/S1063782611060194
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- Article
Matrices of 960-nm vertical-cavity surface-emitting lasers.
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- Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133
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- Article
Circular polarization of the photoluminescence from a system of two-dimensional A centers in a magnetic field.
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- Semiconductors, 2011, v. 45, n. 6, p. 776, doi. 10.1134/S1063782611060200
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- Article
Vacancy model of micropipe annihilation in epitaxial silicon carbide layers.
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- Semiconductors, 2011, v. 45, n. 6, p. 727, doi. 10.1134/S106378261106008X
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- Article
Impurity centers of tin in glassy arsenic chalcogenides.
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- Semiconductors, 2011, v. 45, n. 6, p. 783, doi. 10.1134/S1063782611060054
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- Article
Energy of impurity resonance states in lead telluride with different contents of thallium impurity.
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- Semiconductors, 2011, v. 45, n. 6, p. 724, doi. 10.1134/S1063782611060169
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- Article
Specific features of formation of radiation defects in the silicon layer in 'silicon-on-insulator' structures.
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- Semiconductors, 2011, v. 45, n. 6, p. 738, doi. 10.1134/S1063782611060224
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- Article
A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy 'a statistical method of deep-level transient spectroscopy in semiconductors'.
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- Semiconductors, 2011, v. 45, n. 6, p. 832, doi. 10.1134/S106378261106025X
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Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO Films'.
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- 2011
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- Correction Notice
Yurii Aronovich Goldberg (1939-2011).
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- Semiconductors, 2011, v. 45, n. 6, p. 835, doi. 10.1134/S1063782611060182
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- Article