Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 5

Results: 28

Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 657, doi. 10.1134/S1063782611050162

By:

Khabibullin, R.;
Vasil'evskii, I.;
Galiev, G.;
Klimov, E.;
Ponomarev, D.;
Gladkov, V.;
Kulbachinskii, V.;
Klochkov, A.;
Uzeeva, N.

Publication type:

Article

Theoretical investigations of the g factors and the hyperfine structure constants of the Cr and Mn centrs in silicon.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 577, doi. 10.1134/S1063782611050290

By:

Zhang, Zhi-Hong;
Wu, Shao-Yi;
Xu, Pei

Publication type:

Article

Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 582, doi. 10.1134/S1063782611050034

By:

Antonova, I.;
Smagulova, S.;
Neustroev, E.;
Skuratov, V.;
Jedrzejewski, J.;
Savir, E.;
Balberg, I.

Publication type:

Article

Absolute negative conductivity of graphene with impurities in magnetic field.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 628, doi. 10.1134/S1063782611050058

By:

Belonenko, M.;
Lebedev, N.;
Yanyushkina, N.;
Shakirzyanov, M.

Publication type:

Article

Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 663, doi. 10.1134/S1063782611050265

By:

Slipchenko, S.;
Podoskin, A.;
Pikhtin, N.;
Sokolova, Z.;
Leshko, A.;
Tarasov, I.

Publication type:

Article

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 679, doi. 10.1134/S1063782611050216

By:

Nadtochiy, A.;
Blokhin, S.;
Mutig, A.;
Lott, J.;
Ledentsov, N.;
Karachinskiy, L.;
Maximov, M.;
Ustinov, V.;
Bimber, D.

Publication type:

Article

The influence of substrate temperature on the structural and optical properties of ZnS thin films.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 699, doi. 10.1134/S1063782611050046

By:

Ashraf, M.;
Akhtar, S.;
Ali, Z.;
Qayyum, A.

Publication type:

Article

Fabrication of por-Si/SnO nanocomposite layers for gas microsensors and nanosensors.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 693, doi. 10.1134/S1063782611050071

By:

Bolotov, V.;
Korusenko, P.;
Nesov, S.;
Povoroznyuk, S.;
Roslikov, V.;
Kurdyukova, E.;
Sten'kin, Yu.;
Shelyagin, R.;
Knyazev, E.;
Kan, V.;
Ponomareva, I.

Publication type:

Article

Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 572, doi. 10.1134/S106378261105023X

By:

Pagava, T.;
Maisuradze, N.;
Beridze, M.

Publication type:

Article

Insulator band gap in graphane nanoribbons.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 633, doi. 10.1134/S1063782611050228

By:

Openov, L.;
Podlivaev, A.

Publication type:

Article

Electronic states on silicon surface after deposition and annealing of SiO films.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 587, doi. 10.1134/S1063782611050289

By:

Vlasenko, N.;
Oleksenko, P.;
Denisova, Z.;
Sopinskii, N.;
Veligura, L.;
Gule, E.;
Litvin, O.;
Mukhlyo, M.

Publication type:

Article

Simultaneous TE and TE mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 641, doi. 10.1134/S1063782611050022

By:

Aleshkin, V.;
Babushkina, T.;
Birykov, A.;
Dubinov, A.;
Zvonkov, B.;
Kolesnikov, M.;
Nekorkin, S.

Publication type:

Article

Ion implantation of platinum from pulsed laser plasma for fabrication of a hydrogen detector based on an n-6 H-SiC crystal.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 685, doi. 10.1134/S1063782611050095

By:

Fominskii, V.;
Romanov, R.;
Gnedovets, A.;
Zuev, V.;
Demin, M.;
Grigoriev, V.

Publication type:

Article

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 650, doi. 10.1134/S1063782611050198

By:

Lenka, T.;
Panda, A.

Publication type:

Article

Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 623, doi. 10.1134/S1063782611050186

By:

Lebedev, A.;
Agrinskaya, N.;
Lebedev, S.;
Mynbaeva, M.;
Petrov, V.;
Smirnov, A.;
Strel'chuk, A.;
Titkov, A.;
Shamshur, D.

Publication type:

Article

Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 614, doi. 10.1134/S1063782611050113

By:

Gonchar, K.;
Musabek, G.;
Taurbayev, T.;
Timoshenko, V.

Publication type:

Article

Electrical and gas-sensitive properties of nanostructured SnO:ZrO semiconductor films.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 603, doi. 10.1134/S1063782611050253

By:

Rembeza, S.;
Kosheleva, N.;
Rembeza, E.;
Svistova, T.;
Shmatova, Yu.;
Xu, Gang

Publication type:

Article

On charge transfer in the adsorbed molecules-graphene monolayer-SiC substrate system.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 618, doi. 10.1134/S1063782611050083

By:

Davydov, S.

Publication type:

Article

Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 673, doi. 10.1134/S1063782611050277

By:

Slipchenko, S.;
Podoskin, A.;
Pikhtin, N.;
Stankevich, A.;
Rudova, N.;
Leshko, A.;
Tarasov, I.

Publication type:

Article

High-voltage (3.3 kV) 4 H-SiC JBS diodes.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 668, doi. 10.1134/S1063782611050125

By:

Ivanov, P.;
Grekhov, I.;
Il'inskaya, N.;
Kon'kov, O.;
Potapov, A.;
Samsonova, T.;
Serebrennikova, O.

Publication type:

Article

Current response of a TlBr detector to Cs γ-ray radiation.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 636, doi. 10.1134/S1063782611050101

By:

Gazizov, I.;
Zaletin, V.;
Kukushkin, V.;
Khrunov, V.

Publication type:

Article

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT).

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 646, doi. 10.1134/S1063782611050137

By:

Tsai, Jung-Hui;
Lee, Ching-Sung;
Lour, Wen-Shiung;
Ma, Yung-Chun;
Ye, Sheng-Shiun

Publication type:

Article

Photosensitive structures based on CuInTe single crystals: Development and properties.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 607, doi. 10.1134/S106378261105006X

By:

Bodnar, I.;
Rud, V.;
Rud, Yu.;
Terukov, E.;
Kovalchuk, A.

Publication type:

Article

Photoconductivity of pyrolytic CdS films alloyed with Cs.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 567, doi. 10.1134/S1063782611050204

By:

Maiorova, T.;
Kluyev, V.;
Samofalova, T.

Publication type:

Article

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174

By:

Konin, A.

Publication type:

Article

The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 599, doi. 10.1134/S1063782611050241

By:

Pavlyk, B.;
Hrypa, A.;
Slobodzyan, D.;
Lys, R.;
Shykoryak, J.;
Didyk, R.

Publication type:

Article

Study of dielectric processes in (AsSe)Bi amorphous films.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 611, doi. 10.1134/S1063782611050150

By:

Kastro, R.;
Grabko, G.

Publication type:

Article

Vadim Valentinovich Emtsev (On his 70th birthday).

Published in:: Semiconductors, 2011, v. 45, n. 5, p. 703, doi. 10.1134/S1063782611050149
Publication type:: Article