Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 316, doi. 10.1134/S1063782611030183
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 3
Results: 24
1
2
Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current.
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- Semiconductors, 2011, v. 45, n. 3, p. 415, doi. 10.1134/S1063782611030079
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- Article
3
The I-V characteristics of asymmetrically necked samples of high-resistivity silicon.
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- Semiconductors, 2011, v. 45, n. 3, p. 284, doi. 10.1134/S1063782611030031
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- Article
4
The effect of composition on the formation of light-emitting Si nanostructures in SiO layers on irradiation with swift heavy ions.
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- Semiconductors, 2011, v. 45, n. 3, p. 408, doi. 10.1134/S1063782611030122
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- Publication type:
- Article
5
Mechanisms of defect formation in ingots of 4 H silicon carbide polytype.
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- Semiconductors, 2011, v. 45, n. 3, p. 277, doi. 10.1134/S1063782611030055
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- Article
6
Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well.
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- Semiconductors, 2011, v. 45, n. 3, p. 320, doi. 10.1134/S1063782611030043
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- Publication type:
- Article
7
Carrier transport in layered semiconductor ( p-GaSe)-ferroelectric (KNO) composite nanostructures.
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- Semiconductors, 2011, v. 45, n. 3, p. 338, doi. 10.1134/S1063782611030067
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- Publication type:
- Article
8
HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays.
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- Semiconductors, 2011, v. 45, n. 3, p. 385, doi. 10.1134/S1063782611030250
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- Article
9
A model of nonlinear optical transmittance for insulator nanocomposites.
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- Semiconductors, 2011, v. 45, n. 3, p. 295, doi. 10.1134/S1063782611030109
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- Publication type:
- Article
10
Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector.
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- Semiconductors, 2011, v. 45, n. 3, p. 376, doi. 10.1134/S1063782611030195
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- Publication type:
- Article
11
Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy.
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- Semiconductors, 2011, v. 45, n. 3, p. 403, doi. 10.1134/S1063782611030080
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- Publication type:
- Article
12
Silicon-on-insulator structures with a nitrogenated buried SiO layer: Preparation and properties.
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- Semiconductors, 2011, v. 45, n. 3, p. 325, doi. 10.1134/S1063782611030201
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- Publication type:
- Article
13
Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 350, doi. 10.1134/S1063782611030249
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- Publication type:
- Article
14
Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures.
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- Semiconductors, 2011, v. 45, n. 3, p. 355, doi. 10.1134/S1063782611030110
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- Publication type:
- Article
15
Laminated grid solar cells (LGCells) on multicrystalline silicon. Application of atomic hydrogen treatment.
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- Semiconductors, 2011, v. 45, n. 3, p. 369, doi. 10.1134/S1063782611030213
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- Publication type:
- Article
16
Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 392, doi. 10.1134/S106378261103002X
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- Publication type:
- Article
17
Raman scattering in self-formed nanoporous carbon produced on the basis of silicon carbide.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 306, doi. 10.1134/S1063782611030146
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- Publication type:
- Article
18
Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane.
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- Semiconductors, 2011, v. 45, n. 3, p. 302, doi. 10.1134/S1063782611030225
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- Publication type:
- Article
19
Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGaSe.
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- Semiconductors, 2011, v. 45, n. 3, p. 292, doi. 10.1134/S1063782611030134
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- Publication type:
- Article
20
Mechanisms of current flow in Au-CdTe contacts with a modified surface.
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- Semiconductors, 2011, v. 45, n. 3, p. 312, doi. 10.1134/S106378261103016X
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- Article
21
Edge inversion channels and surface leakage currents in high-voltage semiconductor devices.
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- Semiconductors, 2011, v. 45, n. 3, p. 362, doi. 10.1134/S1063782611030158
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- Publication type:
- Article
22
The influence of hydrogenation on the electrical properties of the CdHgTe epitaxial structures.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 397, doi. 10.1134/S1063782611030237
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- Publication type:
- Article
23
Structure and properties of small clusters of transition 3 d-element oxides.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 333, doi. 10.1134/S1063782611030171
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- Publication type:
- Article
24
Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field.
- Published in:
- Semiconductors, 2011, v. 45, n. 3, p. 288, doi. 10.1134/S1063782611030092
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- Publication type:
- Article