Integrated circuit for processing a low-frequency signal from a seismic detector.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1680, doi. 10.1134/S1063782611130173
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 13
Results: 21
1
2
Ultrawide-band gigahertz-range transceiver based on SiGe transistors.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1661, doi. 10.1134/S1063782611130197
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- Publication type:
- Article
3
Formation of graphene layers by vacuum sublimation of silicon carbide using a scanning heat source.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1656, doi. 10.1134/S1063782611130082
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- Publication type:
- Article
4
A multichannel photoelectric detector of emission spectra.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1676, doi. 10.1134/S1063782611130148
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- Publication type:
- Article
5
Formation of nanosize structures on a silicon substrate by method of focused ion beams.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1709, doi. 10.1134/S1063782611130021
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- Publication type:
- Article
6
Reducing the temperature-drift effect in scanning probe microscopes.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1719, doi. 10.1134/S1063782611130057
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- Publication type:
- Article
7
Determination of the absorption and scattering coefficients of highly scattering media from the experimentally established temporal distributions of laser pulse intensities.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1628, doi. 10.1134/S1063782611130069
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- Publication type:
- Article
8
Method of vacuum deposition for the formation of secondary-emission alloy coatings.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1646, doi. 10.1134/S1063782611130033
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- Publication type:
- Article
9
Silicon-ingot quality monitoring by the photoconductivity-decay method.
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- Semiconductors, 2011, v. 45, n. 13, p. 1649, doi. 10.1134/S1063782611130227
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- Publication type:
- Article
10
Effective conductivity of a polycrystalline medium. Uniaxial texture and biaxial crystallites.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1621, doi. 10.1134/S106378261113015X
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- Publication type:
- Article
11
Specific features of the morphology of titanium oxide films prepared by pulling silicon substrates from a solution.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1653, doi. 10.1134/S1063782611130045
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- Publication type:
- Article
12
Two-dimensional defects and the problem of the identification of a nanoscale particle structure.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1699, doi. 10.1134/S1063782611130161
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- Publication type:
- Article
13
Crystallophysical properties of the InGaAsN/GaAs heterostructures.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1642, doi. 10.1134/S1063782611130215
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- Publication type:
- Article
14
Probability characteristics of electrical noise in heterojunction light-emitting diodes.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1670, doi. 10.1134/S1063782611130185
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- Publication type:
- Article
15
Fluctuation phenomena in nanoscale nickel films near the melting point.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1689, doi. 10.1134/S1063782611130136
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- Publication type:
- Article
16
Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1638, doi. 10.1134/S1063782611130100
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- Publication type:
- Article
17
Multichannel photocells for image converters with color separation.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1684, doi. 10.1134/S1063782611130070
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- Publication type:
- Article
18
Nanocomposite solder for laser welding of biological tissues.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1713, doi. 10.1134/S1063782611130112
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- Publication type:
- Article
19
Measurement of the parameters of nanometer films by optical and microwave methods.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1694, doi. 10.1134/S1063782611130203
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- Publication type:
- Article
20
Model of nonequilibrium crystallization for the numerical solution to the problem of semiconductor crystal growth from melts.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1632, doi. 10.1134/S1063782611130124
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- Publication type:
- Article
21
Low-temperature process of the formation of tubular and graphene carbon structures.
- Published in:
- Semiconductors, 2011, v. 45, n. 13, p. 1705, doi. 10.1134/S1063782611130094
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- Publication type:
- Article