Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 10
Results: 24
Formation of light-emitting nanostructures in layers of stoichiometric SiO irradiated with swift heavy ions.
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- Semiconductors, 2011, v. 45, n. 10, p. 1311, doi. 10.1134/S1063782611100113
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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.
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- Semiconductors, 2011, v. 45, n. 10, p. 1321, doi. 10.1134/S1063782611100125
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Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves.
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- Semiconductors, 2011, v. 45, n. 10, p. 1357, doi. 10.1134/S1063782611100228
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Electrical characteristics of Au/ n-GaAs structures with thin and thick SiO dielectric layer.
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- Semiconductors, 2011, v. 45, n. 10, p. 1286, doi. 10.1134/S1063782611100034
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The effect of Sn impurity on the optical and structural properties of thin silicon films.
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- Semiconductors, 2011, v. 45, n. 10, p. 1281, doi. 10.1134/S1063782611100253
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Band gap of CdTe and CdZnTe crystals.
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- Semiconductors, 2011, v. 45, n. 10, p. 1273, doi. 10.1134/S1063782611100137
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Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures.
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- Semiconductors, 2011, v. 45, n. 10, p. 1327, doi. 10.1134/S1063782611100150
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Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure.
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- Semiconductors, 2011, v. 45, n. 10, p. 1251, doi. 10.1134/S106378261110006X
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Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion accelerator.
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- Semiconductors, 2011, v. 45, n. 10, p. 1291, doi. 10.1134/S1063782611100198
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Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers.
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- Semiconductors, 2011, v. 45, n. 10, p. 1378, doi. 10.1134/S1063782611100162
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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate.
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- Semiconductors, 2011, v. 45, n. 10, p. 1364, doi. 10.1134/S1063782611100241
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Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materials.
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- Semiconductors, 2011, v. 45, n. 10, p. 1339, doi. 10.1134/S1063782611100204
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Optical spectra of six silicon phases.
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- Semiconductors, 2011, v. 45, n. 10, p. 1247, doi. 10.1134/S1063782611100174
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Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature.
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- Semiconductors, 2011, v. 45, n. 10, p. 1334, doi. 10.1134/S1063782611100071
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Structure and magnetic properties of InSe single crystals intercalated by nickel.
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- Semiconductors, 2011, v. 45, n. 10, p. 1258, doi. 10.1134/S1063782611100186
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Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers.
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- Semiconductors, 2011, v. 45, n. 10, p. 1301, doi. 10.1134/S1063782611100022
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A DLTS study of 4 H-SiC-based p- n junctions fabricated by boron implantation.
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- Semiconductors, 2011, v. 45, n. 10, p. 1306, doi. 10.1134/S1063782611100101
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Photoelectric properties of porous GaN/SiC heterostructures.
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- Semiconductors, 2011, v. 45, n. 10, p. 1317, doi. 10.1134/S1063782611100149
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Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate.
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- Semiconductors, 2011, v. 45, n. 10, p. 1297, doi. 10.1134/S1063782611100046
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On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures.
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- Semiconductors, 2011, v. 45, n. 10, p. 1369, doi. 10.1134/S1063782611100083
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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.
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- Semiconductors, 2011, v. 45, n. 10, p. 1352, doi. 10.1134/S1063782611100216
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Tin impurity centers in glassy germanium chalcogenides.
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- Semiconductors, 2011, v. 45, n. 10, p. 1346, doi. 10.1134/S1063782611100058
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I- V characteristics of high-voltage 4 H-SiC diodes with a 1.1-eV Schottky barrier.
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- Semiconductors, 2011, v. 45, n. 10, p. 1374, doi. 10.1134/S1063782611100095
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Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes.
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- Semiconductors, 2011, v. 45, n. 10, p. 1264, doi. 10.1134/S106378261110023X
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