On the maximum thickness of the space-charge region of reverse biased p- n junctions with a positive bevel.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 66, doi. 10.1134/S1063782611010155
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 1
Results: 23
1
2
Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers.
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- Semiconductors, 2011, v. 45, n. 1, p. 1, doi. 10.1134/S1063782611010106
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- Publication type:
- Article
3
Electron-electron interaction and spin-orbit coupling in InAs/AlSb heterostructures with a two-dimensional electron gas.
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- Semiconductors, 2011, v. 45, n. 1, p. 110, doi. 10.1134/S1063782611010088
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- Article
4
Type-I semiconductor heterostructures with an indirect-gap conduction band.
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- Semiconductors, 2011, v. 45, n. 1, p. 96, doi. 10.1134/S1063782611010180
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- Publication type:
- Article
5
Chlorine adsorption on the InAs (001) surface.
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- Semiconductors, 2011, v. 45, n. 1, p. 21, doi. 10.1134/S1063782611010040
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- Publication type:
- Article
6
Current-voltage characteristics of ZnGaSe compound polycrystals.
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- Semiconductors, 2011, v. 45, n. 1, p. 52, doi. 10.1134/S1063782611010209
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- Publication type:
- Article
7
Grain boundary related electrical transport in Al-rich AlGaN layers grown by metal-organic chemical vapor deposition.
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- Semiconductors, 2011, v. 45, n. 1, p. 33, doi. 10.1134/S1063782611010234
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- Publication type:
- Article
8
Features of the charge-transport mechanism in layered BiTe single crystals doped with chlorine and terbium.
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- Semiconductors, 2011, v. 45, n. 1, p. 37, doi. 10.1134/S1063782611010027
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- Publication type:
- Article
9
Temperature-dependent excitonic absorption in long-period multiple InGaAs/GaAs quantum well structures.
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- Semiconductors, 2011, v. 45, n. 1, p. 103, doi. 10.1134/S1063782611010222
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- Publication type:
- Article
10
On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy.
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- Semiconductors, 2011, v. 45, n. 1, p. 85, doi. 10.1134/S106378261101012X
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- Publication type:
- Article
11
Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy.
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- Semiconductors, 2011, v. 45, n. 1, p. 130, doi. 10.1134/S1063782611010143
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- Publication type:
- Article
12
Influence of dislocations on the process of pore formation in n-InP (111) single crystals.
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- Semiconductors, 2011, v. 45, n. 1, p. 121, doi. 10.1134/S1063782611010192
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- Publication type:
- Article
13
The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 134, doi. 10.1134/S1063782611010052
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- Publication type:
- Article
14
Electrical, optical, and mechanical properties of amorphous hydrogenated carbon obtained under various deposition conditions.
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- Semiconductors, 2011, v. 45, n. 1, p. 118, doi. 10.1134/S1063782611010039
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- Publication type:
- Article
15
The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 56, doi. 10.1134/S1063782611010179
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- Publication type:
- Article
16
Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 91, doi. 10.1134/S1063782611010167
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- Publication type:
- Article
17
Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 61, doi. 10.1134/S1063782611010246
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- Publication type:
- Article
18
On the resonant donor level in n-CdTe according to data on electron transport under hydrostatic pressure.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 43, doi. 10.1134/S1063782611010064
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- Publication type:
- Article
19
Conductivity of HgInTe crystals in high electric fields.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 49, doi. 10.1134/S106378261101009X
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- Publication type:
- Article
20
the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 69, doi. 10.1134/S1063782611010210
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- Publication type:
- Article
21
The effect of thermal annealing on the structure of nanocrystalline zinc sulfide films.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 125, doi. 10.1134/S1063782611010131
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- Publication type:
- Article
22
The influence of γ-ray radiation on electrical properties of CuGaSe.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 30, doi. 10.1134/S1063782611010118
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- Publication type:
- Article
23
A thermally induced junction between impurity-conduction and intrinsic-conduction regions.
- Published in:
- Semiconductors, 2011, v. 45, n. 1, p. 47, doi. 10.1134/S1063782611010076
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- Publication type:
- Article