Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 8

Results: 28

Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1030, doi. 10.1134/S1063782610080130
By:
- Ivanov, A. M.;
- Kotina, I. M.;
- Lasakov, M. S.;
- Strokan, N. B.;
- Tuhkonen, L. M.
Publication type:
Article
Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1044, doi. 10.1134/S1063782610080166
By:
- Belogorokhov, I. A.;
- Mamichev, D. A.;
- Dronov, M. A.;
- Pushkarev, V. E.;
- Tomilova, L. G.;
- Khokhlov, D. R.
Publication type:
Article
Raman studies of silicon nanocrystals embedded in silicon suboxide layers.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1040, doi. 10.1134/S1063782610080154
By:
- Maslova, N. E.;
- Antonovsky, A. A.;
- Zhigunov, D. M.;
- Timoshenko, V. Yu.;
- Glebov, V. N.;
- Seminogov, V. N.
Publication type:
Article
Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 987, doi. 10.1134/S106378261008004X
By:
- Borshch, N. A.;
- Pereslavtseva, N. S.;
- Kurganskii, S. I.
Publication type:
Article
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1050, doi. 10.1134/S1063782610080178
By:
- Talalaev, V. G.;
- Senichev, A. V.;
- Novikov, B. V.;
- Tomm, J. W.;
- Elsaesser, T.;
- Zakharov, N. D.;
- Werner, P.;
- Gösele, U.;
- Samsonenko, Yu. B.;
- Cirlin, G. E.
Publication type:
Article
Photoluminescence of nitro-substituted europium (III) phthalocyanines.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1070, doi. 10.1134/S1063782610080208
By:
- Ziminov, A. V.;
- Polevaya, Yu. A.;
- Jourre, T. A.;
- Ramsh, S. M.;
- Mezdrogina, M. M.;
- Poletaev, N. K.
Publication type:
Article
Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1034, doi. 10.1134/S1063782610080142
By:
- Remnev, M. A.;
- Kateev, I. Yu.;
- Elesin, V. F.
Publication type:
Article
Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1059, doi. 10.1134/S106378261008018X
By:
- Konstantinova, E. A.;
- Gayvoronskiy, V. Ya.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191
By:
- Terent'ev, Ya. V.;
- Mukhin, M. S.;
- Solov'ev, V. A.;
- Semenov, A. N.;
- Meltser, B. Ya.;
- Usikova, A. A.;
- Ivanov, S. V.
Publication type:
Article
Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
By:
- Seredin, P. V.;
- Glotov, A. V.;
- Domashevskaya, E. P.;
- Arsentyev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1101, doi. 10.1134/S1063782610080269
By:
- Grekhov, I. V.;
- Kostina, L. S.;
- Argunova, T. S.;
- Belyakova, E. I.;
- Rozkov, A. V.;
- Shmidt, N. M.;
- Yusupova, Sh. A.;
- Je, J. H.
Publication type:
Article
A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1074, doi. 10.1134/S106378261008021X
By:
- Remenyuk, A. D.;
- Zvonareva, T. K.;
- Serenkov, I. T.;
- Sakharov, V. I.;
- Perova, T. S.;
- Wasyluk, J.
Publication type:
Article
Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1090, doi. 10.1134/S1063782610080245
By:
- Avakyants, L. P.;
- Bokov, P. Yu.;
- Chervyakov, A. V.;
- Chuyas, A. V.;
- Yunovich, A. E.;
- Vasileva, E. D.;
- Bauman, D. A.;
- Uelin, V. V.;
- Yavich, B. S.
Publication type:
Article
Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1080, doi. 10.1134/S1063782610080221
By:
- Bobrenko, Yu. N.;
- Pavelets, S. Yu.;
- Pavelets, A. M.;
- Kiselyuk, M. P.;
- Yaroshenko, N. V.
Publication type:
Article
Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 978, doi. 10.1134/S1063782610080026
By:
- Bordovsky, G. A.;
- Gladkikh, P. V.;
- Kozhokar, M. Yu.;
- Marchenko, A. V.;
- Seregin, P. P.;
- Terukov, E. I.
Publication type:
Article
Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1084, doi. 10.1134/S1063782610080233
By:
- Mintairov, S. A.;
- Andreev, V. M.;
- Emelyanov, V. M.;
- Kalyuzhnyy, N. A.;
- Timoshina, N. K.;
- Shvarts, M. Z.;
- Lantratov, V. M.
Publication type:
Article
Interaction of copper impurity with radiation defects in silicon doped with boron.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 983, doi. 10.1134/S1063782610080038
By:
- Yarykin, N. A.;
- Weber, J.
Publication type:
Article
Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1004, doi. 10.1134/S1063782610080075
By:
- Anisimova, N. I.;
- Bordovsky, V. A.;
- Grabko, G. I.;
- Castro, R. A.
Publication type:
Article
Properties of ZnO whiskers under CO-laser irradiation.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1113, doi. 10.1134/S1063782610080282
By:
- Shkumbatyuk, P. S.
Publication type:
Article
Capacitance-voltage characteristics of the electrolyte- n-InN surface and electron states at the interface.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1020, doi. 10.1134/S1063782610080117
By:
- Rudinsky, M. E.;
- Gutkin, A. A.;
- Brunkov, P. N.
Publication type:
Article
Electron scattering by acceptor centers in p-AgTe at low temperatures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1008, doi. 10.1134/S1063782610080087
By:
- Aliev, F. F.;
- Jafarov, M. B.;
- Askerova, G. Z.;
- Gojaev, E. M.
Publication type:
Article
InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1096, doi. 10.1134/S1063782610080257
By:
- Jung-Hui Tsai;
- Wen-Shiung Lour;
- Der-Feng Guo;
- Wen-Chau Liu;
- Yi-Zhen Wu;
- Ying-Feng Dai
Publication type:
Article
A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 975, doi. 10.1134/S1063782610080014
By:
- Khludkov, S. S.;
- Prudaev, I. A.;
- Novikov, V. V.;
- Tolbanov, O. P.;
- Ivonin, I. V.
Publication type:
Article
Optical properties of thin GaSe/ n-Si(111) films.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1012, doi. 10.1134/S1063782610080099
By:
- Kisselyuk, M. P.;
- Vlasenko, O. I.;
- Gentsar, P. O.;
- Vuychik, M. V.;
- Zayats, M. S.;
- Kruglenko, I. V.;
- Litvin, O. S.;
- Kryskov, Ts. A.
Publication type:
Article
Direct tunneling of electrons in Al- n-Si-SiO- n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1016, doi. 10.1134/S1063782610080105
By:
- Goldman, E. I.;
- Gulyaev, Yu. V.;
- Zhdan, A. G.;
- Chucheva, G. V.
Publication type:
Article
Study of main HgMnZnTe band parameters.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 993, doi. 10.1134/S1063782610080051
By:
- Ostapov, S. E.;
- Frasunyak, V. M.;
- Zhikharevich, V. V.
Publication type:
Article
Statistical method of deep-level transient spectroscopy in semiconductors.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 997, doi. 10.1134/S1063782610080063
By:
- Tatokhin, E. A.;
- Kadantsev, A. V.;
- Bormontov, A. E.;
- Zadorozhniy, V. G.
Publication type:
Article