Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 7
Results: 23
Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures.
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- Semiconductors, 2010, v. 44, n. 7, p. 919, doi. 10.1134/S1063782610070158
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Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions.
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- Semiconductors, 2010, v. 44, n. 7, p. 946, doi. 10.1134/S1063782610070195
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The problem of uniformity of properties of 4 H-SiC CVD films.
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- Semiconductors, 2010, v. 44, n. 7, p. 969, doi. 10.1134/S1063782610070237
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Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures.
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- Semiconductors, 2010, v. 44, n. 7, p. 931, doi. 10.1134/S1063782610070171
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Varistor effect in polymer-semiconductor composites.
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- Semiconductors, 2010, v. 44, n. 7, p. 904, doi. 10.1134/S1063782610070134
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Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals.
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- Semiconductors, 2010, v. 44, n. 7, p. 854, doi. 10.1134/S1063782610070031
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Dependence of photoluminescence spectra of epitaxial PbEuTe (0 ≤ x ≤ 0.1) alloy layers on conditions of growth.
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- Semiconductors, 2010, v. 44, n. 7, p. 861, doi. 10.1134/S1063782610070055
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Physics with isotopically controlled semiconductors.
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- Semiconductors, 2010, v. 44, n. 7, p. 841, doi. 10.1134/S106378261007002X
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Growth of (InSb)(Sn) films on GaAs substrates by liquid-phase epitaxy.
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- Semiconductors, 2010, v. 44, n. 7, p. 938, doi. 10.1134/S1063782610070183
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Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots.
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- Semiconductors, 2010, v. 44, n. 7, p. 884, doi. 10.1134/S1063782610070109
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Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
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- Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
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Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon.
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- Semiconductors, 2010, v. 44, n. 7, p. 954, doi. 10.1134/S1063782610070213
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Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer.
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- Semiconductors, 2010, v. 44, n. 7, p. 835, doi. 10.1134/S1063782610070018
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Calculation of the charge-carrier mobility in diamond at low temperatures.
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- Semiconductors, 2010, v. 44, n. 7, p. 867, doi. 10.1134/S1063782610070067
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Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures.
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- Semiconductors, 2010, v. 44, n. 7, p. 875, doi. 10.1134/S1063782610070080
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Electron transport in an InAlAs/InGaAs/InAlAs quantum well with a δ-Si doped barrier in high electric fields.
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- Semiconductors, 2010, v. 44, n. 7, p. 898, doi. 10.1134/S1063782610070122
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MBE growth and characterization of 5-μm quantum-cascade lasers.
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- Semiconductors, 2010, v. 44, n. 7, p. 962, doi. 10.1134/S1063782610070225
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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.
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- Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X
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Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation.
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- Semiconductors, 2010, v. 44, n. 7, p. 879, doi. 10.1134/S1063782610070092
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Numerical simulation of time-dependent geminate recombination in polymers.
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- Semiconductors, 2010, v. 44, n. 7, p. 912, doi. 10.1134/S1063782610070146
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Optical properties of quaternary GaNAsP semiconductor alloys.
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- Semiconductors, 2010, v. 44, n. 7, p. 857, doi. 10.1134/S1063782610070043
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Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix.
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- Semiconductors, 2010, v. 44, n. 7, p. 893, doi. 10.1134/S1063782610070110
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Bistable low temperature (77 K) impurity breakdown in p-type 4 H-SiC.
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- Semiconductors, 2010, v. 44, n. 7, p. 872, doi. 10.1134/S1063782610070079
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