Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 6

Results: 24

Magnetron-assisted deposition of thin (SiC)1-x(AlN)x alloy films.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 812, doi. 10.1134/S1063782610060217
By:
- Gusejnov, M. K.;
- Kurbanov, M. K.;
- Bilalov, B. A.;
- Safaraliev, G. K.
Publication type:
Article
Influence of impurities on the thermoelectric properties of layered anisotropic PbBi4Te7 compound: Experiment and calculations.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 729, doi. 10.1134/S1063782610060072
By:
- Zhitinskaya, M. K.;
- Nemov, S. A.;
- Muhtarova, A. A.;
- Shelimova, L. E.;
- Svechnikova, T. E.;
- Konstantinov, P. P.
Publication type:
Article
Effect of annealing on the structure of Bi2Te3-Bi2Se3 films.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 824, doi. 10.1134/S1063782610060230
By:
- Abdullayev, N. M;
- Mekhtiyeva, S. I.;
- Memmedov, N. R.;
- Ramazanov, M. A.;
- Kerimova, A. M.
Publication type:
Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Kryzhanovskaya, N. V.;
- Synitsin, M. A.;
- Sizov, V. S.;
- Zakgeim, A. L.;
- Mizerov, M. N.
Publication type:
Article
Doping of IV-VI semiconductors and the energy spectrum of holes with resonance states taken into account.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 712, doi. 10.1134/S1063782610060047
By:
- Prokofieva, L. V.;
- Ravich, Yu. I.;
- Pshenay-Severin, D. A.;
- Konstantinov, P. P.;
- Shabaldin, A. A.
Publication type:
Article
Spin-peierls transition in the random impurity sublattice of a semiconductor.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 705, doi. 10.1134/S1063782610060035
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.
Publication type:
Article
Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 828, doi. 10.1134/S1063782610060242
By:
- Kryzhanovskaya, N. V.;
- Lundin, W. V.;
- Nikolaev, A. E.;
- Tsatsul'nikov, A. F.;
- Sakharov, A. V.;
- Pavlov, M. M.;
- Cherkachin, N. A.;
- Hÿtch, M. J.;
- Valkovsky, G. A.;
- Yagovkina, M. A.;
- Usov, S. O.
Publication type:
Article
Specific features of formation and evolution of a longitudinal autosoliton in p-InSb in a longitudinal magnetic field.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 691, doi. 10.1134/S1063782610060011
By:
- Kamilov, I. K.;
- Stepurenko, A. A.;
- Gummetov, A. E.
Publication type:
Article
Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 699, doi. 10.1134/S1063782610060023
By:
- Kosyachenko, L. A.;
- Maslyanchuk, O. L.;
- Melnychuk, S. V.;
- Sklyarchuk, V. M.;
- Sklyarchuk, O. V.;
- Aoki, T.
Publication type:
Article
Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 789, doi. 10.1134/S1063782610060163
By:
- Petrunov, A. N.;
- Podoskin, A. A.;
- Shashkin, I. S.;
- Slipchenko, S. O.;
- Pikhtin, N. A.;
- Nalet, T. A.;
- Fetisova, N. V.;
- Vavilova, L. S.;
- Lyutetskiy, A. V.;
- Alekseev, P. A.;
- Titkov, A. N.;
- Tarasov, I. S.
Publication type:
Article
Wannier-Stark states in a superlattice of InAs/GaAs quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 761, doi. 10.1134/S1063782610060126
By:
- Sobolev, M. M.;
- Vasil'ev, A. P.;
- Nevedomskii, V. N.
Publication type:
Article
A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 778, doi. 10.1134/S1063782610060151
By:
- Kalinina, E. V.;
- Kossov, V. G.;
- Yafaev, R. R.;
- Strel'chuk, A. M.;
- Violina, G. N.
Publication type:
Article
Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 745, doi. 10.1134/S1063782610060102
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Vitusevich, S. A.;
- Ivanov, V. N.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Lebedev, A. A.;
- Milenin, V. V.;
- Sveshnikov, Yu. N.;
- Sheremet, V. N.
Publication type:
Article
Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 766, doi. 10.1134/S1063782610060138
By:
- Belogorokhov, I. A.;
- Martishov, M. N.;
- Mamichev, D. A.;
- Dronov, M. A.;
- Pushkarev, V. E.;
- Ryabchikov, Yu. V.;
- Forsh, P. A.;
- Tomilova, L. G.;
- Khokhlov, D. R.
Publication type:
Article
Features of the light current-voltage characteristics of bifacial solar cells based on thin CdTe layers.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 801, doi. 10.1134/S1063782610060187
By:
- Meriuts, A. V.;
- Khrypunov, G. V.;
- Shelest, T. N.;
- Deyneko, N. V.
Publication type:
Article
Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 816, doi. 10.1134/S1063782610060229
By:
- Semenov, A. V.;
- Lopin, A. V.;
- Puzikov, V. M.;
- Baumer, V. N.;
- Dmitruk, I. N.
Publication type:
Article
Mechanism of the GaN LED efficiency falloff with increasing current.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 794, doi. 10.1134/S1063782610060175
By:
- Bochkareva, N. I.;
- Voronenkov, V. V.;
- Gorbunov, R. I.;
- Zubrilov, A. S.;
- Lelikov, Y. S.;
- Latyshev, F. E.;
- Rebane, Y. T.;
- Tsyuk, A. I.;
- Shreter, Y. G.
Publication type:
Article
Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 752, doi. 10.1134/S1063782610060114
By:
- Krutogolov, Yu. K.
Publication type:
Article
Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 772, doi. 10.1134/S106378261006014X
By:
- Kopach, V. R.;
- Kirichenko, M. V.;
- Khrypunov, G. S.;
- Zaitsev, R. V.
Publication type:
Article
Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 737, doi. 10.1134/S1063782610060096
By:
- Torkhov, N. A.
Publication type:
Article
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
By:
- Vinokurov, D. A.;
- Ladugin, M. A.;
- Lyutetskii, A. V.;
- Marmalyuk, A. A.;
- Petrunov, A. N.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Shashkin, I. S.;
- Averkiev, N. S.;
- Tarasov, I. S.
Publication type:
Article
Phonon drag of electrons in Ag2S.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 734, doi. 10.1134/S1063782610060084
By:
- Aliev, S. A.;
- Aliev, F. F.;
- Gasanov, Z. S.;
- Abdullayev, S. M.;
- Selim-zade, R. I.
Publication type:
Article
The effects of defects on electrical properties of Ag2S at phase transition.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 719, doi. 10.1134/S1063782610060059
By:
- Aliev, F. F.;
- Jafarov, M. B.;
- Eminova, V. I.
Publication type:
Article
Innovations in X-ray-induced electron emission spectroscopy (XIEES).
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 723, doi. 10.1134/S1063782610060060
By:
- Pogrebitsky, K. Ju;
- Sharkov, M. D.
Publication type:
Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 6

Magnetron-assisted deposition of thin (SiC)<sub>1-x</sub>(AlN)<sub>x</sub> alloy films.

Influence of impurities on the thermoelectric properties of layered anisotropic PbBi<sub>4</sub>Te<sub>7</sub> compound: Experiment and calculations.

Effect of annealing on the structure of Bi<sub>2</sub>Te<sub>3</sub>-Bi<sub>2</sub>Se<sub>3</sub> films.

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.

Doping of IV-VI semiconductors and the energy spectrum of holes with resonance states taken into account.

Spin-peierls transition in the random impurity sublattice of a semiconductor.

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes.

Specific features of formation and evolution of a longitudinal autosoliton in p-InSb in a longitudinal magnetic field.

Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals.

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.

Wannier-Stark states in a superlattice of InAs/GaAs quantum dots.

A high-temperature radiation-resistant rectifier based on p<sup>+</sup>-n junctions in 4H-SiC ion-implanted with aluminum.

Effect of microwave treatment on current flow mechanisms in Au-TiB<sub>x</sub>-Al-Ti-n<sup>+</sup>-n-n<sup>+</sup>-GaN-Al<sub>2</sub>O<sub>3</sub> ohmic contacts.

Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density.

Features of the light current-voltage characteristics of bifacial solar cells based on thin CdTe layers.

Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes.

Mechanism of the GaN LED efficiency falloff with increasing current.

Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors.

Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells.

Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier.

Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.

Phonon drag of electrons in Ag<sub>2</sub>S.

The effects of defects on electrical properties of Ag<sub>2</sub>S at phase transition.

Innovations in X-ray-induced electron emission spectroscopy (XIEES).