Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 3

Results: 23

Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 289, doi. 10.1134/S1063782610030036

By:

Kyazym-zade, A. G.;
Salmanov, V. M.;
Salmanova, A. A.;
Alieva, A. M.;
Ibaeva, R. Z.

Publication type:

Article

Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 293, doi. 10.1134/S1063782610030048

By:

Romaka, V. A.;
Fruchart, D.;
Hlil, E. K.;
Gladyshevskii, R. E.;
Gignoux, D.;
Romaka, V. V.;
Kuzhel, B. S.;
Krayjvskii, R. V.

Publication type:

Article

A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 392, doi. 10.1134/S1063782610030206

By:

Bogatyrenko, V. V.

Publication type:

Article

Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 401, doi. 10.1134/S106378261003022X

By:

Drozdov, M. N.;
Drozdov, Yu. N.;
Lobanov, D. N.;
Novikov, A. V.;
Yurasov, D. V.

Publication type:

Article

Reliability estimate for semiconductor laser module ILPN-134.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 359, doi. 10.1134/S1063782610030152

By:

Zhuravleva, O. V.;
Ivanov, A. V.;
Kurnosov, V. D.;
Kurnosov, K. V.;
Romantsevich, V. I.;
Chernov, R. V.

Publication type:

Article

Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 309, doi. 10.1134/S1063782610030061

By:

Lissotschenko, V. N.;
Konakova, R. V.;
Konoplev, B. G.;
Kushnir, V. V.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.

Publication type:

Article

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 329, doi. 10.1134/S1063782610030103

By:

Novikov, A. V.;
Yablonskiy, A. N.;
Platonov, V. V.;
Obolenskiy, S. V.;
Lobanov, D. N.;
Krasilnik, Z. F.

Publication type:

Article

Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 335, doi. 10.1134/S1063782610030115

By:

Kucherova, O. V.;
Zubkov, V. I.;
Solomonov, A. V.;
Davydov, D. V.

Publication type:

Article

Self-diffusion parameters in carbon-subgroup crystals.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 271, doi. 10.1134/S1063782610030012

By:

Magomedov, M. N.

Publication type:

Article

The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 341, doi. 10.1134/S1063782610030127

By:

Gulyaev, D. V.;
Zhuravlev, K. S.

Publication type:

Article

Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 366, doi. 10.1134/S1063782610030164

By:

Anisimov, O. V.;
Gaman, V. I.;
Maksimova, N. K.;
Najden, Yu. P.;
Novikov, V. A.;
Sevastyanov, E. Yu.;
Rudov, F. V.;
Chernikov, E. V.

Publication type:

Article

Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 321, doi. 10.1134/S1063782610030097

By:

Mezdrogina, M. M.;
Danilovsky, E. Yu.;
Kuzmin, R. V.

Publication type:

Article

Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 303, doi. 10.1134/S106378261003005X

By:

Dmitriev, A. I.;
Morgunov, R. B.;
Kazakova, O. L.

Publication type:

Article

Effect of thermal oxidation on charge carrier transport in nanostructured silicon.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 350, doi. 10.1134/S1063782610030139

By:

Agafonova, E. A.;
Martyshov, M. N.;
Forsh, P. A.;
Timoshenko, V. Yu.;
Kashkarov, P. K.

Publication type:

Article

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 380, doi. 10.1134/S1063782610030188

By:

Poklonski, N. A.;
Gorbachuk, N. I.;
Shpakovski, S. V.;
Lastovskii, S. B.;
Wieck, A.

Publication type:

Article

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 373, doi. 10.1134/S1063782610030176

By:

Zakgeim, A. L.;
Kuryshev, G. L.;
Mizerov, M. N.;
Polovinkin, V. G.;
Rozhansky, I. V.;
Chernyakov, A. E.

Publication type:

Article

Precipitation of boron in silicon on high-dose implantation.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 285, doi. 10.1134/S1063782610030024

By:

Feklistov, K. V.;
Fedina, L. I.;
Cherkov, A. G.

Publication type:

Article

Sublimation molecular beam epitaxy of silicon-based structures.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 396, doi. 10.1134/S1063782610030218

By:

Kuznetsov, V. P.;
Krasil'nik, Z. F.

Publication type:

Article

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 405, doi. 10.1134/S1063782610030231

By:

Sadofyev, Yu. G.;
Samal, N.;
Andreev, B. A.;
Gavrilenko, V. I.;
Morozov, S. V.;
Spivakov, A. G.;
Yablonsky, A. N.

Publication type:

Article

Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 385, doi. 10.1134/S106378261003019X

By:

Kuznetsov, V. P.;
Kuznetsov, M. V.;
Krasil'nik, Z. F.

Publication type:

Article

Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085

By:

Il'chuk, G. A.;
Kusnezh, V. V.;
Rud', V. Yu.;
Rud', Yu. V.;
Shapowal, P. Yo.;
Petrus', R. Yu.

Publication type:

Article

Study of the current-voltage characteristic of the n-CdS/ p-CdTe heterostructure depending on temperature.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 313, doi. 10.1134/S1063782610030073

By:

Usmonov, Sh. N.;
Mirsagatov, Sh. A.;
Leyderman, A. Yu.

Publication type:

Article

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140

By:

Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Heller, N. M.;
Ivanov, A. G.;
Shamanin, V. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 3

Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation.

Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals.

A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements.

Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.

Reliability estimate for semiconductor laser module ILPN-134.

Reduction in absorption in quartz/Si, quartz/Si/SiO<sub>2</sub>, and SiC/Si/SiO<sub>2</sub> structures on laser treatment.

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures.

Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells.

Self-diffusion parameters in carbon-subgroup crystals.

The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.

Effect of gold on the properties of nitrogen dioxide sensors based on thin WO<sub>3</sub> films.

Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).

Effect of annealing on the microwave magnetoresistance of thin Ge<sub>0.96</sub>Mn<sub>0.04</sub> films.

Effect of thermal oxidation on charge carrier transport in nanostructured silicon.

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons.

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.

Precipitation of boron in silicon on high-dose implantation.

Sublimation molecular beam epitaxy of silicon-based structures.

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.

Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm.

Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.

Study of the current-voltage characteristic of the n-CdS/ p-CdTe heterostructure depending on temperature.

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.