Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 3

Results: 23

Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 289, doi. 10.1134/S1063782610030036
By:
- Kyazym-zade, A. G.;
- Salmanov, V. M.;
- Salmanova, A. A.;
- Alieva, A. M.;
- Ibaeva, R. Z.
Publication type:
Article
Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 309, doi. 10.1134/S1063782610030061
By:
- Lissotschenko, V. N.;
- Konakova, R. V.;
- Konoplev, B. G.;
- Kushnir, V. V.;
- Okhrimenko, O. B.;
- Svetlichnyi, A. M.
Publication type:
Article
Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 401, doi. 10.1134/S106378261003022X
By:
- Drozdov, M. N.;
- Drozdov, Yu. N.;
- Lobanov, D. N.;
- Novikov, A. V.;
- Yurasov, D. V.
Publication type:
Article
A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 392, doi. 10.1134/S1063782610030206
By:
- Bogatyrenko, V. V.
Publication type:
Article
Reliability estimate for semiconductor laser module ILPN-134.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 359, doi. 10.1134/S1063782610030152
By:
- Zhuravleva, O. V.;
- Ivanov, A. V.;
- Kurnosov, V. D.;
- Kurnosov, K. V.;
- Romantsevich, V. I.;
- Chernov, R. V.
Publication type:
Article
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 329, doi. 10.1134/S1063782610030103
By:
- Novikov, A. V.;
- Yablonskiy, A. N.;
- Platonov, V. V.;
- Obolenskiy, S. V.;
- Lobanov, D. N.;
- Krasilnik, Z. F.
Publication type:
Article
Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 293, doi. 10.1134/S1063782610030048
By:
- Romaka, V. A.;
- Fruchart, D.;
- Hlil, E. K.;
- Gladyshevskii, R. E.;
- Gignoux, D.;
- Romaka, V. V.;
- Kuzhel, B. S.;
- Krayjvskii, R. V.
Publication type:
Article
Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 335, doi. 10.1134/S1063782610030115
By:
- Kucherova, O. V.;
- Zubkov, V. I.;
- Solomonov, A. V.;
- Davydov, D. V.
Publication type:
Article
Self-diffusion parameters in carbon-subgroup crystals.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 271, doi. 10.1134/S1063782610030012
By:
- Magomedov, M. N.
Publication type:
Article
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 341, doi. 10.1134/S1063782610030127
By:
- Gulyaev, D. V.;
- Zhuravlev, K. S.
Publication type:
Article
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 380, doi. 10.1134/S1063782610030188
By:
- Poklonski, N. A.;
- Gorbachuk, N. I.;
- Shpakovski, S. V.;
- Lastovskii, S. B.;
- Wieck, A.
Publication type:
Article
Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 321, doi. 10.1134/S1063782610030097
By:
- Mezdrogina, M. M.;
- Danilovsky, E. Yu.;
- Kuzmin, R. V.
Publication type:
Article
Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 303, doi. 10.1134/S106378261003005X
By:
- Dmitriev, A. I.;
- Morgunov, R. B.;
- Kazakova, O. L.
Publication type:
Article
Precipitation of boron in silicon on high-dose implantation.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 285, doi. 10.1134/S1063782610030024
By:
- Feklistov, K. V.;
- Fedina, L. I.;
- Cherkov, A. G.
Publication type:
Article
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 373, doi. 10.1134/S1063782610030176
By:
- Zakgeim, A. L.;
- Kuryshev, G. L.;
- Mizerov, M. N.;
- Polovinkin, V. G.;
- Rozhansky, I. V.;
- Chernyakov, A. E.
Publication type:
Article
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 405, doi. 10.1134/S1063782610030231
By:
- Sadofyev, Yu. G.;
- Samal, N.;
- Andreev, B. A.;
- Gavrilenko, V. I.;
- Morozov, S. V.;
- Spivakov, A. G.;
- Yablonsky, A. N.
Publication type:
Article
Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 385, doi. 10.1134/S106378261003019X
By:
- Kuznetsov, V. P.;
- Kuznetsov, M. V.;
- Krasil'nik, Z. F.
Publication type:
Article
Effect of thermal oxidation on charge carrier transport in nanostructured silicon.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 350, doi. 10.1134/S1063782610030139
By:
- Agafonova, E. A.;
- Martyshov, M. N.;
- Forsh, P. A.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 366, doi. 10.1134/S1063782610030164
By:
- Anisimov, O. V.;
- Gaman, V. I.;
- Maksimova, N. K.;
- Najden, Yu. P.;
- Novikov, V. A.;
- Sevastyanov, E. Yu.;
- Rudov, F. V.;
- Chernikov, E. V.
Publication type:
Article
Study of the current-voltage characteristic of the n-CdS/ p-CdTe heterostructure depending on temperature.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 313, doi. 10.1134/S1063782610030073
By:
- Usmonov, Sh. N.;
- Mirsagatov, Sh. A.;
- Leyderman, A. Yu.
Publication type:
Article
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140
By:
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Heller, N. M.;
- Ivanov, A. G.;
- Shamanin, V. V.
Publication type:
Article
Sublimation molecular beam epitaxy of silicon-based structures.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 396, doi. 10.1134/S1063782610030218
By:
- Kuznetsov, V. P.;
- Krasil'nik, Z. F.
Publication type:
Article
Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085
By:
- Il'chuk, G. A.;
- Kusnezh, V. V.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Shapowal, P. Yo.;
- Petrus', R. Yu.
Publication type:
Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 3

Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation.

Reduction in absorption in quartz/Si, quartz/Si/SiO<sub>2</sub>, and SiC/Si/SiO<sub>2</sub> structures on laser treatment.

Secondary cluster ions Ge and Gefor improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures.

A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements.

Reliability estimate for semiconductor laser module ILPN-134.

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures.

Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals.

Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells.

Self-diffusion parameters in carbon-subgroup crystals.

The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons.

Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).

Effect of annealing on the microwave magnetoresistance of thin Ge<sub>0.96</sub>Mn<sub>0.04</sub> films.

Precipitation of boron in silicon on high-dose implantation.

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.

Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm.

Effect of thermal oxidation on charge carrier transport in nanostructured silicon.

Effect of gold on the properties of nitrogen dioxide sensors based on thin WO<sub>3</sub> films.

Study of the current-voltage characteristic of the n-CdS/ p-CdTe heterostructure depending on temperature.

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.

Sublimation molecular beam epitaxy of silicon-based structures.

Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.