Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 13

Results: 22

On the theory of love waves in heterostructures with hexagonal symmetry.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1625, doi. 10.1134/S1063782610130014
By:
- Morocha, A.
Publication type:
Article
Formation and atomic force spectroscopy of AlGaN/GaN nanoheterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1694, doi. 10.1134/S1063782610130154
By:
- Tsarik, K.;
- Nevolin, V.
Publication type:
Article
Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1723, doi. 10.1134/S106378261013021X
By:
- Shadov, M.
Publication type:
Article
Degradation of integrated schmitt triggers of the CMOS logic under the effect of ultrashort pulsed overloads.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1662, doi. 10.1134/S1063782610130099
By:
- Bobreshov, A.;
- Dyboi, A.;
- Razuvaev, Yu.;
- Uskov, G.
Publication type:
Article
Radiation effects in nanoelectronic elements.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1699, doi. 10.1134/S1063782610130166
By:
- Gromov, D.;
- Elesin, V.;
- Petrov, G.;
- Bobrinetskii, I.;
- Nevolin, V.
Publication type:
Article
Determination of parameters of a nonlinear model of GaAs high-power MESFET field transistors.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1658, doi. 10.1134/S1063782610130087
By:
- Bakhvalova, S.
Publication type:
Article
Monitoring of the current-distribution uniformity in bipolar transistors from the dependence of internal-feedback factor on collector voltage.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1675, doi. 10.1134/S1063782610130117
By:
- Sergeev, V.;
- Dulov, O.;
- Kulikov, A.
Publication type:
Article
Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1631, doi. 10.1134/S1063782610130026
By:
- Amelichev, V.;
- Saikin, D.;
- Roshchin, V.;
- Silibin, M.
Publication type:
Article
Waveguide photonic crystals with characteristics controlled with p- i- n diodes.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1685, doi. 10.1134/S1063782610130130
By:
- Usanov, D.;
- Skripal, A.;
- Abramov, A.;
- Bogolyubov, A.;
- Skvortsov, V.;
- Merdanov, M.
Publication type:
Article
Fabrication of nanosized superconductor structures with a critical temperature exceeding 100 K.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1714, doi. 10.1134/S1063782610130191
By:
- Grigorashvili, Yu.;
- Bukhlin, A.;
- Veryuzhskii, I.
Publication type:
Article
Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1709, doi. 10.1134/S106378261013018X
By:
- Sagunova, I.;
- Shevyakov, V.;
- Gavrilov, S.;
- Belov, A.
Publication type:
Article
Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1703, doi. 10.1134/S1063782610130178
By:
- Ageev, O.;
- Alyab'eva, N.;
- Konoplev, B.;
- Polyakov, V.;
- Smirnov, V.
Publication type:
Article
A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1644, doi. 10.1134/S1063782610130051
By:
- Manzha, N.
Publication type:
Article
Application of short light pulses for measuring parameters of solar cells.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1727, doi. 10.1134/S1063782610130221
By:
- Yaremchuk, A.;
- Alekseev, A.;
- Korotkevich, A.
Publication type:
Article
Reversible high-speed electrostatic 'contact'.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1654, doi. 10.1134/S1063782610130075
By:
- Baginsky, I.;
- Kostsov, E.
Publication type:
Article
Analysis of thermal processes in piezoceramic actuator.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1689, doi. 10.1134/S1063782610130142
By:
- Dobrynin, A.;
- Kharitonova, T.;
- Kazakov, V.
Publication type:
Article
Brightness-voltage characteristics of ZnS:Mn luminescent films.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1634, doi. 10.1134/S1063782610130038
By:
- Samokhvalov, M.;
- Takhtenkova, M.
Publication type:
Article
Model of thermal oxidation of silicon with diffusion coefficient relaxation.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1637, doi. 10.1134/S106378261013004X
By:
- Aleksandrov, O.;
- Dus', A.
Publication type:
Article
Simulation of electrical parameters of channels of silicon MOS transistors on a deformed substrate.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1680, doi. 10.1134/S1063782610130129
By:
- Filippov, V.;
- Petrov, B.;
- Myasnyankin, Yu.
Publication type:
Article
Thermodynamics of the formation of catalyst clusters for carbon nanotube growth.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1718, doi. 10.1134/S1063782610130208
By:
- Bulyarskii, S.;
- Pyatilova, O.;
- Tsygantsov, A.;
- Basaev, A.;
- Galperin, V.;
- Pavlov, A.;
- Shaman, Yu.
Publication type:
Article
The influence of solution-precursors on optical properties of InS films deposited by successive ionic layer adsorption and reaction.
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1649, doi. 10.1134/S1063782610130063
By:
- Gavrilov, S.;
- Zheleznyakova, A.;
- Redichev, E.;
- Popenko, N.
Publication type:
Article
High-power microwave LDMOS transistors for wireless data transmission technologies (Review).
Published in:
Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105
By:
- Kuznetsov, E.;
- Shemyakin, A.
Publication type:
Article