Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 13

Results: 22

On the theory of love waves in heterostructures with hexagonal symmetry.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1625, doi. 10.1134/S1063782610130014

By:

Morocha, A.

Publication type:

Article

Formation and atomic force spectroscopy of AlGaN/GaN nanoheterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1694, doi. 10.1134/S1063782610130154

By:

Tsarik, K.;
Nevolin, V.

Publication type:

Article

Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1723, doi. 10.1134/S106378261013021X

By:

Shadov, M.

Publication type:

Article

Degradation of integrated schmitt triggers of the CMOS logic under the effect of ultrashort pulsed overloads.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1662, doi. 10.1134/S1063782610130099

By:

Bobreshov, A.;
Dyboi, A.;
Razuvaev, Yu.;
Uskov, G.

Publication type:

Article

Radiation effects in nanoelectronic elements.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1699, doi. 10.1134/S1063782610130166

By:

Gromov, D.;
Elesin, V.;
Petrov, G.;
Bobrinetskii, I.;
Nevolin, V.

Publication type:

Article

Determination of parameters of a nonlinear model of GaAs high-power MESFET field transistors.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1658, doi. 10.1134/S1063782610130087

By:

Bakhvalova, S.

Publication type:

Article

Monitoring of the current-distribution uniformity in bipolar transistors from the dependence of internal-feedback factor on collector voltage.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1675, doi. 10.1134/S1063782610130117

By:

Sergeev, V.;
Dulov, O.;
Kulikov, A.

Publication type:

Article

Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1631, doi. 10.1134/S1063782610130026

By:

Amelichev, V.;
Saikin, D.;
Roshchin, V.;
Silibin, M.

Publication type:

Article

Waveguide photonic crystals with characteristics controlled with p- i- n diodes.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1685, doi. 10.1134/S1063782610130130

By:

Usanov, D.;
Skripal, A.;
Abramov, A.;
Bogolyubov, A.;
Skvortsov, V.;
Merdanov, M.

Publication type:

Article

Fabrication of nanosized superconductor structures with a critical temperature exceeding 100 K.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1714, doi. 10.1134/S1063782610130191

By:

Grigorashvili, Yu.;
Bukhlin, A.;
Veryuzhskii, I.

Publication type:

Article

Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1709, doi. 10.1134/S106378261013018X

By:

Sagunova, I.;
Shevyakov, V.;
Gavrilov, S.;
Belov, A.

Publication type:

Article

Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1703, doi. 10.1134/S1063782610130178

By:

Ageev, O.;
Alyab'eva, N.;
Konoplev, B.;
Polyakov, V.;
Smirnov, V.

Publication type:

Article

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1644, doi. 10.1134/S1063782610130051

By:

Manzha, N.

Publication type:

Article

Application of short light pulses for measuring parameters of solar cells.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1727, doi. 10.1134/S1063782610130221

By:

Yaremchuk, A.;
Alekseev, A.;
Korotkevich, A.

Publication type:

Article

Reversible high-speed electrostatic 'contact'.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1654, doi. 10.1134/S1063782610130075

By:

Baginsky, I.;
Kostsov, E.

Publication type:

Article

Analysis of thermal processes in piezoceramic actuator.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1689, doi. 10.1134/S1063782610130142

By:

Dobrynin, A.;
Kharitonova, T.;
Kazakov, V.

Publication type:

Article

Brightness-voltage characteristics of ZnS:Mn luminescent films.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1634, doi. 10.1134/S1063782610130038

By:

Samokhvalov, M.;
Takhtenkova, M.

Publication type:

Article

Model of thermal oxidation of silicon with diffusion coefficient relaxation.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1637, doi. 10.1134/S106378261013004X

By:

Aleksandrov, O.;
Dus', A.

Publication type:

Article

Simulation of electrical parameters of channels of silicon MOS transistors on a deformed substrate.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1680, doi. 10.1134/S1063782610130129

By:

Filippov, V.;
Petrov, B.;
Myasnyankin, Yu.

Publication type:

Article

Thermodynamics of the formation of catalyst clusters for carbon nanotube growth.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1718, doi. 10.1134/S1063782610130208

By:

Bulyarskii, S.;
Pyatilova, O.;
Tsygantsov, A.;
Basaev, A.;
Galperin, V.;
Pavlov, A.;
Shaman, Yu.

Publication type:

Article

The influence of solution-precursors on optical properties of InS films deposited by successive ionic layer adsorption and reaction.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1649, doi. 10.1134/S1063782610130063

By:

Gavrilov, S.;
Zheleznyakova, A.;
Redichev, E.;
Popenko, N.

Publication type:

Article

High-power microwave LDMOS transistors for wireless data transmission technologies (Review).

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105

By:

Kuznetsov, E.;
Shemyakin, A.

Publication type:

Article