Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 12
Results: 16
Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray Co photons.
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- Semiconductors, 2010, v. 44, n. 12, p. 1559, doi. 10.1134/S1063782610120055
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- Article
Yurii Vasil'evich Shmartsev (Dedicated to his 80th birthday).
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- Semiconductors, 2010, v. 44, n. 12, p. 1624, doi. 10.1134/S106378261012016X
- Publication type:
- Article
Photophysical properties of indolo[3,2-b]carbazoles as a promising class of optoelectronic materials.
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- Semiconductors, 2010, v. 44, n. 12, p. 1581, doi. 10.1134/S1063782610120080
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- Article
Study of tunneling transport of carriers in structures with an InGaN/GaN active region.
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- Semiconductors, 2010, v. 44, n. 12, p. 1567, doi. 10.1134/S1063782610120067
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- Article
InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate.
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- Semiconductors, 2010, v. 44, n. 12, p. 1592, doi. 10.1134/S1063782610120109
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- Article
Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO composites in the 1.3-1.6 μm spectral range.
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- Semiconductors, 2010, v. 44, n. 12, p. 1537, doi. 10.1134/S1063782610120018
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- Article
Formation and crystallization of silicon nanoclusters in SiN:H films using femtosecond pulsed laser annealings.
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- Semiconductors, 2010, v. 44, n. 12, p. 1611, doi. 10.1134/S1063782610120146
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- Article
Enhancement of the output emission efficiency of thin-film photoluminescence composite structures based on PbSe.
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- Semiconductors, 2010, v. 44, n. 12, p. 1554, doi. 10.1134/S1063782610120043
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- Article
Galvanomagnetic and thermoelectric properties of BiTeBr and BiTeI single crystals and their electronic structure.
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- Semiconductors, 2010, v. 44, n. 12, p. 1548, doi. 10.1134/S1063782610120031
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- Article
Formation of 2D photonic crystal bars by simultaneous photoelectrochemical etching of trenches and macropores in silicon.
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- Semiconductors, 2010, v. 44, n. 12, p. 1617, doi. 10.1134/S1063782610120158
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- Article
Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors.
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- Semiconductors, 2010, v. 44, n. 12, p. 1600, doi. 10.1134/S1063782610120122
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- Article
Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors.
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- Semiconductors, 2010, v. 44, n. 12, p. 1597, doi. 10.1134/S1063782610120110
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- Article
Effect of surface chemical treatments on Ti- p-SiGe x and Ni- p-SiGe contact properties.
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- Semiconductors, 2010, v. 44, n. 12, p. 1606, doi. 10.1134/S1063782610120134
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- Article
Free-standing luminescent layers of porous silicon.
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- Semiconductors, 2010, v. 44, n. 12, p. 1588, doi. 10.1134/S1063782610120092
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- Article
Features of vanadium impurity states in lead telluride.
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- Semiconductors, 2010, v. 44, n. 12, p. 1543, doi. 10.1134/S106378261012002X
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- Article
Specific features of photoelectric properties of layered films of amorphous hydrogenated silicon.
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- Semiconductors, 2010, v. 44, n. 12, p. 1576, doi. 10.1134/S1063782610120079
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- Article