Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 12

Results: 16

Yurii Vasil'evich Shmartsev (Dedicated to his 80th birthday).

Published in:: Semiconductors, 2010, v. 44, n. 12, p. 1624, doi. 10.1134/S106378261012016X
Publication type:: Article

Formation and crystallization of silicon nanoclusters in SiN:H films using femtosecond pulsed laser annealings.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1611, doi. 10.1134/S1063782610120146

By:

Korchagina, T.;
Volodin, V.;
Chichkov, B.

Publication type:

Article

Photophysical properties of indolo[3,2-b]carbazoles as a promising class of optoelectronic materials.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1581, doi. 10.1134/S1063782610120080

By:

Svetlichnyi, V.;
Alexandrova, E.;
Miagkova, L.;
Matushina, N.;
Nekrasova, T.;
Tameev, A.;
Stepanenko, S.;
Vannikov, A.;
Kudryavtsev, V.

Publication type:

Article

Study of tunneling transport of carriers in structures with an InGaN/GaN active region.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1567, doi. 10.1134/S1063782610120067

By:

Sizov, V.;
Neploh, V.;
Tsatsulnikov, A.;
Sakharov, A.;
Lundin, W.;
Zavarin, E.;
Nikolaev, A.;
Mintairov, A.;
Merz, J.

Publication type:

Article

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1592, doi. 10.1134/S1063782610120109

By:

Vinokurov, D.;
Nikolaev, D.;
Pikhtin, N.;
Stankevich, A.;
Shamakhov, V.;
Rastegaeva, M.;
Rozhkov, A.;
Tarasov, I.

Publication type:

Article

Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO composites in the 1.3-1.6 μm spectral range.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1537, doi. 10.1134/S1063782610120018

By:

Pevtsov, A.;
Grudinkin, S.;
Poddubny, A.;
Kaplan, S.;
Kurdyukov, D.;
Golubev, V.

Publication type:

Article

Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray Co photons.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1559, doi. 10.1134/S1063782610120055

By:

Belyaev, A.;
Boltovets, N.;
Bobyl, A.;
Ivanov, V.;
Kapitanchuk, L.;
Kladko, V.;
Konakova, R.;
Kudryk, Ya.;
Korchevoi, A.;
Lytvyn, O.;
Milenin, V.;
Novitskii, S.;
Sheremet, V.

Publication type:

Article

Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1597, doi. 10.1134/S1063782610120110

By:

Kuznetsov, V.;
Shmagin, V.;
Marychev, M.;
Kudryavtsev, K.;
Kuznetsov, M.;
Andreev, B.;
Kornaukhov, A.;
Gorshkov, O.;
Krasilnik, Z.

Publication type:

Article

Free-standing luminescent layers of porous silicon.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1588, doi. 10.1134/S1063782610120092

By:

Goryachev, D.;
Belyakov, L.;
Sreseli, O.

Publication type:

Article

Enhancement of the output emission efficiency of thin-film photoluminescence composite structures based on PbSe.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1554, doi. 10.1134/S1063782610120043

By:

Anisimova, N.;
Tropina, N.;
Tropin, A.

Publication type:

Article

Galvanomagnetic and thermoelectric properties of BiTeBr and BiTeI single crystals and their electronic structure.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1548, doi. 10.1134/S1063782610120031

By:

Kulbachinskii, V.;
Kytin, V.;
Lavrukhina, Z.;
Kuznetsov, A.;
Shevelkov, A.

Publication type:

Article

Formation of 2D photonic crystal bars by simultaneous photoelectrochemical etching of trenches and macropores in silicon.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1617, doi. 10.1134/S1063782610120158

By:

Astrova, E.;
Fedulova, G.;
Guschina, E.

Publication type:

Article

Features of vanadium impurity states in lead telluride.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1543, doi. 10.1134/S106378261012002X

By:

Artamkin, A.;
Dobrovolsky, A.;
Vinokurov, A.;
Zlomanov, V.;
Gavrilkin, S.;
Ivanenko, O.;
Mitzen, K.;
Ryabova, L.;
Khokhlov, D.

Publication type:

Article

Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1600, doi. 10.1134/S1063782610120122

By:

Emelyanov, V.;
Kalyuzhniy, N.;
Mintairov, S.;
Shvarts, M.;
Lantratov, V.

Publication type:

Article

Effect of surface chemical treatments on Ti- p-SiGe x and Ni- p-SiGe contact properties.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1606, doi. 10.1134/S1063782610120134

By:

Atabaev, I.;
Hajiev, M.;
Matchanov, N.;
Saliev, T.;
Bobojonov, K.

Publication type:

Article

Specific features of photoelectric properties of layered films of amorphous hydrogenated silicon.

Published in:

Semiconductors, 2010, v. 44, n. 12, p. 1576, doi. 10.1134/S1063782610120079

By:

Kurova, I.;
Ormont, N.

Publication type:

Article