Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 11

Results: 29

Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1476, doi. 10.1134/S1063782610110199

By:

Morozov, S.;
Marem'yanin, K.;
Erofeeva, I.;
Yablonskiy, A.;
Antonov, A.;
Gavrilenko, L.;
Rumyantsev, V.;
Gavrilenko, V.

Publication type:

Article

Low-field anomaly of the hall effect in disordered two-dimensional systems.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1430, doi. 10.1134/S1063782610110102

By:

Germanenko, A.;
Minkov, G.;
Rut, O.;
Soldatov, I.;
Sherstobitov, A.

Publication type:

Article

In situ optical diagnostics of growing surfaces in the process of nanoheterostructure fabrication.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1441, doi. 10.1134/S1063782610110126

By:

Kazakov, I.;
Glazyrin, E.;
Savinov, S.;
Tsekhosh, V.;
Shmelev, S.

Publication type:

Article

Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1418, doi. 10.1134/S1063782610110072

By:

Belyakov, V.;
Konakov, A.;
Burdov, V.

Publication type:

Article

Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1394, doi. 10.1134/S1063782610110023

By:

Firsov, D.;
Shalygin, V.;
Panevin, V.;
Melentyev, G.;
Sofronov, A.;
Vorobjev, L.;
Andrianov, A.;
Zakhar'in, A.;
Mikhrin, V.;
Vasil'ev, A.;
Zhukov, A.;
Gavrilenko, L.;
Gavrilenko, V.;
Antonov, A.;
Aleshkin, V.

Publication type:

Article

Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1427, doi. 10.1134/S1063782610110096

By:

Shangina, E.;
Smirnov, K.;
Morozov, D.;
Kovalyuk, V.;
Gol'tsman, G.;
Verevkin, A.;
Toropov, A.

Publication type:

Article

High-resolution emission spectra of pulsed terahertz quantum-cascade lasers.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1467, doi. 10.1134/S1063782610110175

By:

Ikonnikov, A.;
Antonov, A.;
Lastovkin, A.;
Gavrilenko, V.;
Sadof'ev, Yu.;
Samal, N.

Publication type:

Article

Dynamic electron tunneling through the quantum dot under conditions of Coulomb blockade.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1515, doi. 10.1134/S1063782610110278

By:

Kashin, S.;
Satanin, A.

Publication type:

Article

The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1492, doi. 10.1134/S1063782610110229

By:

Ikonnikov, A.;
Spirin, K.;
Gavrilenko, V.;
Kozlov, D.;
Drachenko, O.;
Schneider, H.;
Helm, M.

Publication type:

Article

Carrier heating in quantum wells under optical and current injection of electron-hole pairs.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1402, doi. 10.1134/S1063782610110047

By:

Vorobjev, L.;
Vinnichenko, M.;
Firsov, D.;
Zerova, V.;
Panevin, V.;
Sofronov, A.;
Thumrongsilapa, P.;
Ustinov, V.;
Zhukov, A.;
Vasiljev, A.;
Shterengas, L.;
Kipshidze, G.;
Hosoda, T.;
Belenky, G.

Publication type:

Article

Resonance structure of the rate of Auger recombination in silicon nanocrystals.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1414, doi. 10.1134/S1063782610110060

By:

Kurova, N.;
Burdov, V.

Publication type:

Article

Tunneling electron transport through heterobarriers with nanometer heterogeneities.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1499, doi. 10.1134/S1063782610110242

By:

Kozlov, V.;
Verbus, V.

Publication type:

Article

XIV Annual International Workshop 'Nanophysics and Nanoelectronics 2010'.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1393, doi. 10.1134/S1063782610110011

By:

Krasil'nik, Z.

Publication type:

Article

Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1520, doi. 10.1134/S106378261011028X

By:

Kalyuzhnyy, N.;
Gudovskikh, A.;
Evstropov, V.;
Lantratov, V.;
Mintairov, S.;
Timoshina, N.;
Shvarts, M.;
Andreev, V.

Publication type:

Article

Lateral transport and far-infrared radiation of electrons in InGaAs/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1495, doi. 10.1134/S1063782610110230

By:

Baidus, N.;
Belevskii, P.;
Biriukov, A.;
Vainberg, V.;
Vinoslavskii, M.;
Ikonnikov, A.;
Zvonkov, B.;
Pylypchuk, A.;
Poroshin, V.

Publication type:

Article

Special features of the excitation spectra and kinetics of photoluminescence of the SiGe:Er/Si structures with relaxed heterolayers.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1480, doi. 10.1134/S1063782610110205

By:

Krasilnikova, L.;
Yablonskiy, A.;
Stepikhova, M.;
Drozdov, Yu.;
Shengurov, V.;
Krasilnik, Z.

Publication type:

Article

Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1398, doi. 10.1134/S1063782610110035

By:

Prokof'eva, M.;
Dorokhin, M.;
Danilov, Yu.;
Kudrin, A.;
Vikhrova, O.

Publication type:

Article

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1472, doi. 10.1134/S1063782610110187

By:

Yablonskiy, A.;
Andreev, B.;
Krasilnikova, L.;
Kryzhkov, D.;
Kuznetsov, V.;
Krasilnik, Z.

Publication type:

Article

Single-mode vertical-cavity surface emitting lasers for Rb-based chip-scale atomic clock.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1422, doi. 10.1134/S1063782610110084

By:

Derebezov, I.;
Haisler, V.;
Bakarov, A.;
Kalagin, A.;
Toropov, A.;
Kachanova, M.;
Gavrilova, T.;
Semenova, O.;
Tretyakov, D.;
Beterov, I.;
Entin, V.;
Ryabtsev, I.

Publication type:

Article

Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1464, doi. 10.1134/S1063782610110163

By:

Antonov, A.;
Vostokov, N.;
Drozdov, M.;
Moldavskaya, L.;
Shashkin, V.;
Khrykin, O.;
Yablonskiy, A.

Publication type:

Article

The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1511, doi. 10.1134/S1063782610110266

By:

Vasilyev, Yu.;
Gouider, F.;
Nachtwei, G.;
Buckle, P.

Publication type:

Article

Temperature dependence of inverse population on intracenter transitions of shallow impurity centers in semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1457, doi. 10.1134/S1063782610110151

By:

Orlova, E.

Publication type:

Article

Inversionless amplification in semiconductor nanostructures: A way to create a frequency-tunable laser of far-infrared and terahertz radiation.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1435, doi. 10.1134/S1063782610110114

By:

Kukushkin, V.

Publication type:

Article

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p/ n/ n-Si:Er.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1486, doi. 10.1134/S1063782610110217

By:

Shmagin, V.;
Kuznetsov, V.;
Kudryavtsev, K.;
Obolensky, S.;
Kozlov, V.;
Krasil'nik, Z.

Publication type:

Article

Formation and 'white' photoluminescence of nanoclusters in SiO films implanted with carbon ions.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1450, doi. 10.1134/S106378261011014X

By:

Belov, A.;
Mikhaylov, A.;
Nikolitchev, D.;
Boryakov, A.;
Sidorin, A.;
Gratchev, A.;
Ershov, A.;
Tetelbaum, D.

Publication type:

Article

Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1406, doi. 10.1134/S1063782610110059

By:

Fateev, D.;
Popov, V.;
Shur, M.

Publication type:

Article

Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1504, doi. 10.1134/S1063782610110254

By:

Mashin, A.;
Nezhdanov, A.;
Filatov, D.;
Isakov, M.;
Shengurov, V.;
Chalkov, V.;
Denisov, S.

Publication type:

Article

Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1446, doi. 10.1134/S1063782610110138

By:

Akhlestina, S.;
Vasil'ev, V.;
Vikhrova, O.;
Danilov, Yu.;
Zvonkov, B.;
Nekorkin, S.

Publication type:

Article

Dynamic current localization during turn-off of high-power microgate bipolar switches.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1529, doi. 10.1134/S1063782610110291

By:

Gorbatyuk, A.;
Grekhov, I.;
Gusin, D.

Publication type:

Article