Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 6

Results: 27

Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 765, doi. 10.1134/S1063782609060153
By:
- Lisitski, O. L.;
- Kumekov, M. E.;
- Kumekov, S. E.;
- Terukov, E. I.
Publication type:
Article
Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 787, doi. 10.1134/S1063782609060190
By:
- Orlov, M. L.;
- Panin, A. N.;
- Orlov, L. K.
Publication type:
Article
Specific features of electronic and vibrational properties of I-V-V2 crystals.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 735, doi. 10.1134/S1063782609060098
By:
- Basalaev, Yu. M.;
- Kosobutsky, A. V.;
- Poplavnoi, A. S.
Publication type:
Article
Application of the theory of transient processes in high-resistivity semiconductors to the determination of properties of the cold Universe.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 740, doi. 10.1134/S1063782609060104
By:
- Fouks, B. I.
Publication type:
Article
Relaxation of optically stimulated resistance of thin SnO2 films.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 782, doi. 10.1134/S1063782609060189
By:
- Russkih, D. V.;
- Rembeza, S. I.
Publication type:
Article
Study of the 3 C-SiC layers grown on the 15 R-SiC substrates.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 756, doi. 10.1134/S106378260906013X
By:
- Lebedev, A. A.;
- Abramov, P. L.;
- Bogdanova, E. V.;
- Zubrilov, A. S.;
- Lebedev, S. P.;
- Nelson, D. K.;
- Seredova, N. V.;
- Smirnov, A. N.;
- Tregubova, A. S.
Publication type:
Article
The quantum solution of the accumulation layer problem of n-InN.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 760, doi. 10.1134/S1063782609060141
By:
- Klochikhin, A. A.;
- Strashkova, I. Yu.
Publication type:
Article
Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 706, doi. 10.1134/S1063782609060037
By:
- Belyaev, A. P.;
- Rubets, V. P.;
- Antipov, V. V.;
- Toshkhodzhaev, Kh. A.
Publication type:
Article
Distribution of electric fields in ZnS:Mn single crystals during electroluminescence.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 716, doi. 10.1134/S1063782609060050
By:
- Bulanuy, M. F.;
- Kovalenko, A. V.;
- Polezaev, B. A.;
- Prokof'yev, T. A.
Publication type:
Article
Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6 H substrate.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 818, doi. 10.1134/S1063782609060244
By:
- Wolfson, A. A.
Publication type:
Article
Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 726, doi. 10.1134/S1063782609060074
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kapitanchuk, L. M.;
- Konakova, R. F.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.
Publication type:
Article
Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 691, doi. 10.1134/S1063782609060013
By:
- Karaseov, P. A.;
- Azarov, A. Yu.;
- Titov, A. I.;
- Kucheyev, S. O.
Publication type:
Article
Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 775, doi. 10.1134/S1063782609060177
By:
- Borkovska, L. V.;
- Korsunska, N. E.;
- Kryshtab, T. G.;
- Germash, L. P.;
- Pecherska, E. Yu.;
- Ostapenko, S.;
- Chornokur, G.
Publication type:
Article
Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 801, doi. 10.1134/S1063782609060219
By:
- Bobrenko, Yu. N.;
- Pavelets, S. Yu.;
- Pavelets, A. M.
Publication type:
Article
Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 751, doi. 10.1134/S1063782609060128
By:
- Kalygina, V. M.;
- Gricyk, V. Ju.
Publication type:
Article
Phase transformations in II–V semiconductors under high pressure.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 701, doi. 10.1134/S1063782609060025
By:
- Mollaev, A. Yu.;
- Saypulaeva, L. A.;
- Alibekov, A. G.;
- Marenkin, S. F.;
- Babushkin, A. N.
Publication type:
Article
The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 721, doi. 10.1134/S1063782609060062
By:
- Pagava, T. A.;
- Maisuradze, N. I.
Publication type:
Article
Intersegment resistance in silicon p— n-Junction position-sensitive detectors.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 796, doi. 10.1134/S1063782609060207
By:
- Eremin, V. K.;
- Verbitskaya, E. M.;
- Ilyashenko, I. N.;
- Eremin, I. V.;
- Safonova, N. N.;
- Tuboltsev, Yu. V.;
- Egorov, N. N.;
- Golubkov, S. A.;
- Konkov, K. A.
Publication type:
Article
Low-temperature plasma pulsed deposition of thin films with nanoscale periodicity of properties.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 828, doi. 10.1134/S106378260906027X
By:
- Serdobintsev, A. A.;
- Veselov, A. G.;
- Kiryasova, O. A.;
- Portnov, S. A.;
- Bratashov, D. N.
Publication type:
Article
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Usov, S. O.;
- Sizov, V. S.;
- Mikhailovsky, G. A.;
- Cherkashin, N. A.;
- Hytch, M.;
- Hue, F.;
- Yakovlev, E. V.;
- Lobanova, A. V.;
- Tsatsulnikov, A. F.
Publication type:
Article
Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 807, doi. 10.1134/S1063782609060220
By:
- Sizov, V. S.;
- Gutkin, A. A.;
- Sakharov, A. V.;
- Lundin, V. V.;
- Brunkov, P. N.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 710, doi. 10.1134/S1063782609060049
By:
- Astrov, Yu. A.;
- Kozlov, V. A.;
- Lodygin, A. N.;
- Portsel, L. M.;
- Shuman, V. B.;
- Gurevich, E. L.;
- Hergenröder, R.
Publication type:
Article
Scanning tunneling microscopy of the Si-SiO2 structure: the use of feedback fault conditions in surface studies.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 820, doi. 10.1134/S1063782609060256
By:
- Kornilov, V. M.;
- Lachinov, A. N.;
- Loginov, B. A.;
- Bespalov, V. A.
Publication type:
Article
Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 730, doi. 10.1134/S1063782609060086
By:
- Popovych, V. D.;
- Potera, P.;
- Virt, I. S.;
- Bilyk, M. F.
Publication type:
Article
Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 823, doi. 10.1134/S1063782609060268
By:
- Dmitriev, S. G.
Publication type:
Article
Nonradiative recombination in GaN quantum dots formed in the AlN matrix.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 768, doi. 10.1134/S1063782609060165
By:
- Aleksandrov, I. A.;
- Zhuravlev, K. S.;
- Mansurov, V. G.
Publication type:
Article
The variation in activity of recombination centers in silicon p- n structures under the conditions of acoustic loading.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 745, doi. 10.1134/S1063782609060116
By:
- Olikh, O. Ya.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 6

Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.

Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors.

Specific features of electronic and vibrational properties of I-V-V<sub>2</sub> crystals.

Application of the theory of transient processes in high-resistivity semiconductors to the determination of properties of the cold Universe.

Relaxation of optically stimulated resistance of thin SnO<sub>2</sub> films.

Study of the 3 C-SiC layers grown on the 15 R-SiC substrates.

The quantum solution of the accumulation layer problem of n-InN.

Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions.

Distribution of electric fields in ZnS:Mn single crystals during electroluminescence.

Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6 H substrate.

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB<sub>2</sub> films.

Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN.

Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots.

Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers.

Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO<sub>2</sub>-Si MOS diodes.

Phase transformations in II–V semiconductors under high pressure.

The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals.

Intersegment resistance in silicon p— n-Junction position-sensitive detectors.

Low-temperature plasma pulsed deposition of thin films with nanoscale periodicity of properties.

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.

Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus.

Scanning tunneling microscopy of the Si-SiO<sub>2</sub> structure: the use of feedback fault conditions in surface studies.

Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals.

Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films.

Nonradiative recombination in GaN quantum dots formed in the AlN matrix.

The variation in activity of recombination centers in silicon p- n structures under the conditions of acoustic loading.