Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 5
Results: 27
Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes.
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- Semiconductors, 2009, v. 43, n. 5, p. 640, doi. 10.1134/S1063782609050194
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Emission distribution in GaInAsSb/GaSb flip-chip diodes.
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- Semiconductors, 2009, v. 43, n. 5, p. 662, doi. 10.1134/S1063782609050224
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Light-emitting diodes of “Warm” white luminescence on the basis of p- n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets.
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- Semiconductors, 2009, v. 43, n. 5, p. 672, doi. 10.1134/S1063782609050248
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Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed.
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- Semiconductors, 2009, v. 43, n. 5, p. 568, doi. 10.1134/S1063782609050042
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Persistent photoconductivity in MgZnO alloys.
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- Semiconductors, 2009, v. 43, n. 5, p. 577, doi. 10.1134/S1063782609050054
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Redistribution of Al in implanted SiC layers as a result of thermal annealing.
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- Semiconductors, 2009, v. 43, n. 5, p. 557, doi. 10.1134/S1063782609050029
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Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As transistor.
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- Semiconductors, 2009, v. 43, n. 5, p. 652, doi. 10.1134/S1063782609050212
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Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
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- Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261
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Thermoelectric properties of symmetric and asymmetric double quantum well structures.
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- Semiconductors, 2009, v. 43, n. 5, p. 624, doi. 10.1134/S1063782609050169
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Electronic structure of Zn-substituted germanium clathrates.
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- Semiconductors, 2009, v. 43, n. 5, p. 563, doi. 10.1134/S1063782609050030
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Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC.
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- Semiconductors, 2009, v. 43, n. 5, p. 612, doi. 10.1134/S1063782609050145
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Width of the excitonic absorption line in Al<sub> x</sub>Ga<sub>1 − x</sub>as alloys.
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- Semiconductors, 2009, v. 43, n. 5, p. 629, doi. 10.1134/S1063782609050170
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Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys.
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- Semiconductors, 2009, v. 43, n. 5, p. 581, doi. 10.1134/S1063782609050066
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Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.
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- Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200
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Low-temperature production of silicon carbide films of different polytypes.
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- Semiconductors, 2009, v. 43, n. 5, p. 685, doi. 10.1134/S1063782609050273
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Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs.
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- Semiconductors, 2009, v. 43, n. 5, p. 635, doi. 10.1134/S1063782609050182
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Laplace-DLTS method with the regularization parameter chosen from the L curve.
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- Semiconductors, 2009, v. 43, n. 5, p. 586, doi. 10.1134/S1063782609050078
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High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures.
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- Semiconductors, 2009, v. 43, n. 5, p. 617, doi. 10.1134/S1063782609050157
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Nonlinear thermopower in bipolar semiconductor samples.
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- Semiconductors, 2009, v. 43, n. 5, p. 604, doi. 10.1134/S1063782609050121
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Structure and properties of Cd<sub> x</sub>Hg<sub>1− x</sub>Te-metal contacts.
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- Semiconductors, 2009, v. 43, n. 5, p. 608, doi. 10.1134/S1063782609050133
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Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide.
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- Semiconductors, 2009, v. 43, n. 5, p. 677, doi. 10.1134/S106378260905025X
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Mechanism of forward current transport in modified-surface Au-CdTe photodiodes.
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- Semiconductors, 2009, v. 43, n. 5, p. 602, doi. 10.1134/S106378260905011X
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Dislocation electrical conductivity of synthetic diamond films.
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- Semiconductors, 2009, v. 43, n. 5, p. 594, doi. 10.1134/S1063782609050091
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Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100).
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- Semiconductors, 2009, v. 43, n. 5, p. 551, doi. 10.1134/S1063782609050017
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Optical properties of the Si-doped GaN/Al<sub>2</sub>O<sub>3</sub> films.
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- Semiconductors, 2009, v. 43, n. 5, p. 590, doi. 10.1134/S106378260905008X
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Solar cells based on gallium antimonide.
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- Semiconductors, 2009, v. 43, n. 5, p. 668, doi. 10.1134/S1063782609050236
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Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions.
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- Semiconductors, 2009, v. 43, n. 5, p. 599, doi. 10.1134/S1063782609050108
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