Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 4

Results: 26

Photoelectrochemical cells based on In2S3 single crystals.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Bodnar, I. V.;
- Ushakova, T. N.
Publication type:
Article
Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 544, doi. 10.1134/S1063782609040265
By:
- Bakaleinikov, L. A.;
- Domrachova, Ya. V.;
- Kolesnikova, E. V.;
- Zamoryanskaya, M. V.;
- Popova, T. B.;
- Flegontova, E. Yu.
Publication type:
Article
The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 524, doi. 10.1134/S1063782609040228
By:
- Rabinovich, O. I.;
- Sushkov, V. P.
Publication type:
Article
Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 413, doi. 10.1134/S1063782609040010
By:
- Brudnyi, V. N.;
- Vedernikova, T. V.
Publication type:
Article
I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS) x.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 416, doi. 10.1134/S1063782609040022
By:
- Saidov, A. S.;
- Leyderman, A. Yu.;
- Usmonov, Sh. N.;
- Kholikov, K. T.
Publication type:
Article
Current dependence of capacitance of germanium p+- p junctions in the temperature range of 290–330 K.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 436, doi. 10.1134/S106378260904006X
By:
- Shekhovtsov, N. A.
Publication type:
Article
Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 528, doi. 10.1134/S106378260904023X
By:
- Antonov, A. V.;
- Gavrilenko, V. I.;
- Maremyanin, K. V.;
- Morozov, S. V.;
- Teppe, F.;
- Knap, W.
Publication type:
Article
Thermoelectric power in carbon nanotubes.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 480, doi. 10.1134/S1063782609040137
By:
- Mavrinskiy, A. V.;
- Baitinger, E. M.
Publication type:
Article
Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 490, doi. 10.1134/S1063782609040150
By:
- Sobolev, M. M.;
- Gadzhiyev, I. M.;
- Bakshaev, I. O.;
- Mikhrin, V. S.;
- Nevedomskiy, V. N.;
- Buyalo, M. S.;
- Zadiranov, Yu. M.;
- Portnoi, E. L.
Publication type:
Article
Resonance enhancement of spin-polarized electron emission.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 463, doi. 10.1134/S1063782609040101
By:
- Gerchikov, L. G.;
- Mamaev, Yu. A.;
- Yashin, Yu. P.;
- Vasiliev, D. A.;
- Kuz'michev, V. V.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Vasiliev, A. P.;
- Mikhrin, V. S.
Publication type:
Article
Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 429, doi. 10.1134/S1063782609040058
By:
- Kurylyuk, V. V.;
- Korotchenkov, O. A.
Publication type:
Article
Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 495, doi. 10.1134/S1063782609040162
By:
- Aliev, K. M.;
- Kamilov, I. K.;
- Ibragimov, Kh. O.;
- Abakarova, N. S.
Publication type:
Article
Drift velocity of electrons in quantum wells in high electric fields.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 458, doi. 10.1134/S1063782609040095
By:
- Mokerov, V. G.;
- Vasil'evskii, I. S.;
- Galiev, G. B.;
- Požela, J.;
- Po&žela, K.;
- Sužiedųlis, A.;
- Jucienų, V.;
- Paškevič, Č.
Publication type:
Article
Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 485, doi. 10.1134/S1063782609040149
By:
- Davidenko, N. A.;
- Dekhtyarenko, S. V.;
- Kokozay, V. N.;
- Kozinetz, A. V.;
- Semenaka, V. V.;
- Skryshevsky, V. A.;
- Tretyak, O. V.
Publication type:
Article
Tunneling recombination in semiconductor structures with nanoscale disorder.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 440, doi. 10.1134/S1063782609040071
By:
- Bulyarski, S. V.;
- Rud', Yu. V.;
- Vostretsova, L. N.;
- Kagarmanov, A. S.;
- Trifonov, O. A.
Publication type:
Article
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 519, doi. 10.1134/S1063782609040216
By:
- Andreev, A. Yu.;
- Zorina, S. A.;
- Leshko, A. Yu.;
- Lyutetskiy, A. V.;
- Marmalyuk, A. A.;
- Murashova, A. V.;
- Nalet, T. A.;
- Padalitsa, A. A.;
- Pikhtin, N. A.;
- Sabitov, D. R.;
- Simakov, V. A.;
- Slipchenko, S. O.;
- Telegin, K. Yu.;
- Shamakhov, V. V.;
- Tarasov, I. S.
Publication type:
Article
Optical and structural characteristics of Ga-doped ZnO films.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 419, doi. 10.1134/S1063782609040034
By:
- Novodvorsky, O. A.;
- Gorbatenko, L. S.;
- Panchenko, V. Ya.;
- Khramova, O. D.;
- Cherebilo, Ye. A.;
- Wenzel, C.;
- Bartha, J. T.;
- Bublik, V. T.;
- Shcherbachev, K. D.
Publication type:
Article
GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 532, doi. 10.1134/S1063782609040241
By:
- Aluev, A. V.;
- Leshko, A. Yu.;
- Lyutetskiy, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Fetisova, N. V.;
- Chelny, A. A.;
- Shamakhov, V. V.;
- Simakov, V. A.;
- Tarasov, I. S.
Publication type:
Article
Effect of the number of pairs of the layers on the quality of the superlattices of the In xGa1 − xAs/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 472, doi. 10.1134/S1063782609040125
By:
- Kuznetsov, G. F.
Publication type:
Article
Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In xGa1 − x N/GaN quantum wells.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083
By:
- Mezdrogina, M. M.;
- Krivolapchuk, V. V.;
- Petrov, V. N.;
- Kozhanova, Yu. V.;
- Danilovski, E. Yu.;
- Kuz'min, R. V.
Publication type:
Article
The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 500, doi. 10.1134/S1063782609040174
By:
- Kabanov, V. V.;
- Lebiadok, E. V.;
- Ryabtsev, A. G.;
- Ryabtsev, G. I.;
- Schemelev, M. A.;
- Sherstnev, V. V.;
- Astakhova, A. P.;
- Yakovlev, Yu. P.
Publication type:
Article
Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 508, doi. 10.1134/S1063782609040198
By:
- Zakheim, A. L.;
- Zotova, N. V.;
- Il'inskaya, N. D.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyi, M. A.;
- Stus', N. M.;
- Usikova, A. A.;
- Chernyakov, A. E.
Publication type:
Article
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204
By:
- Blokhin, S. A.;
- Sakharov, A. V.;
- Nadtochy, A. M.;
- Pauysov, A. S.;
- Maximov, M. V.;
- Ledentsov, N. N.;
- Kovsh, A.R.;
- Mikhrin, S. S.;
- Lantratov, V. M.;
- Mintairov, S. A.;
- Kaluzhniy, N. A.;
- Shvarts, M. Z.
Publication type:
Article
Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 468, doi. 10.1134/S1063782609040113
By:
- Gruzintsev, A. N.;
- Emelchenko, G. A.;
- Redkin, A. N.;
- Volkov, W. T.;
- Yakimov, E. E.;
- Visimberga, G.;
- Romanov, S. G.
Publication type:
Article
AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 537, doi. 10.1134/S1063782609040253
By:
- Mokerov, V. G.;
- Kuznetsov, A. L.;
- Fedorov, Yu. V.;
- Bugaev, A. S.;
- Pavlov, A. Yu.;
- Enyushkina, E. N.;
- Gnatyuk, D. L.;
- Zuev, A. V.;
- Galiev, R. R.;
- Ovcharenko, E. N.;
- Sveshnikov, Yu. N.;
- Tsatsulnikov, A. F.;
- Ustinov, V. M.
Publication type:
Article
High-voltage (1800 V) planar 4 H-SiC p-n junctions with floating guard rings.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 505, doi. 10.1134/S1063782609040186
By:
- Ivanov, P. A.;
- Grekhov, I. V.;
- Il'inskaya, N. D.;
- Samsonova, T. P.;
- Potapov, A. S.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 4

Photoelectrochemical cells based on In<sub>2</sub>S<sub>3</sub> single crystals.

Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique.

The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes.

Electrical properties of Zinc-Tin diarsenide (ZnSnAs<sub>2</sub>) irradiated with H<sup>+</sup> ions.

I–V characteristic of p-n structures based on a continuous solid solutions (Si<sub>2</sub>)<sub>1 − xx</sub>(CdS)<sub> x</sub>.

Current dependence of capacitance of germanium p<sup>+</sup>- p junctions in the temperature range of 290–330 K.

Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.

Thermoelectric power in carbon nanotubes.

Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.

Resonance enhancement of spin-polarized electron emission.

Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures.

Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.

Drift velocity of electrons in quantum wells in high electric fields.

Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes.

Tunneling recombination in semiconductor structures with nanoscale disorder.

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.

Optical and structural characteristics of Ga-doped ZnO films.

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.

Effect of the number of pairs of the layers on the quality of the superlattices of the In<sub> x</sub>Ga<sub>1 − x</sub>As/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control.

Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.

The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP.

Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).

AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.

Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence.

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f<sub>max</sub> as high as 100 GHz.

High-voltage (1800 V) planar 4 H-SiC p-n junctions with floating guard rings.