Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 3

Results: 28

Effect of the duration of the growth process on the properties of GaN grown by the sublimation method.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 400, doi. 10.1134/S1063782609030269

By:

Wolfson, A. A.;
Mokhov, E. N.

Publication type:

Article

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270

By:

Bobrovnikova, I. A.;
Ivonin, I. V.;
Novikov, V. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Yurii Viktorovich Gorelkinskii (1939–2008).

Published in:: 2009
Publication type:: Obituary

Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 394, doi. 10.1134/S1063782609030257

By:

Zakhgeim, A. L.;
Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus', N. M.;
Chernyakov, A. E.

Publication type:

Article

Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 382, doi. 10.1134/S1063782609030233

By:

Morozov, M. Yu.;
Morozov, Yu. A.;
Popov, V. V.

Publication type:

Article

Photoelectrochemical cells based on ternary compounds CuIn2 n + 1Se3 n + 2 ( n = 3–6).

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X

By:

Rud, V. Yu.;
Rud, Yu. V.;
Bodnar, I. V.;
Gorbachev, D. V.;
Ushakova, T. N.

Publication type:

Article

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 323, doi. 10.1134/S1063782609030129

By:

Kozyrev, S. P.

Publication type:

Article

Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 331, doi. 10.1134/S1063782609030130

By:

Kulchin, J. N.;
Dzyuba, V. P.;
Shcherbakov, A. V.

Publication type:

Article

The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 340, doi. 10.1134/S1063782609030142

By:

Tkach, N. V.;
Seti, Ju.

Publication type:

Article

Anti-stokes luminescence of Zn0.75Cd0.25S microcrystals annealed in the presence of oxygen.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 347, doi. 10.1134/S1063782609030154

By:

Ovchinnikov, O. V.;
Smirnov, M. S.;
Kosyakova, E. A.;
Latyshev, A. N.;
Klyuev, V. G.;
Evlev, A. B.;
Utekhin, A. N.;
Aseeva, D. V.

Publication type:

Article

Photostructural reconstructions of As-S and As-Se semiconductor glasses.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 352, doi. 10.1134/S1063782609030166

By:

Bordovsky, G. A.;
Nemov, S. A.;
Anisimova, N. I.;
Dzemidko, I. A.;
Marchenko, A. V.;
Seregin, P. P.

Publication type:

Article

Photoelectric and electrical properties of soluble polyphenylquinolines containing an oxygen or phenylamine bridge group between quinoline moieties.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 359, doi. 10.1134/S106378260903018X

By:

Aleksandrova, E. L.;
Svetlychnyi, V. M.;
Miagkova, L. A.;
Nekrasova, T. N.;
Tameev, A. R.;
Vannikov, A. A.;
Kudryavtsev, V. V.

Publication type:

Article

Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 355, doi. 10.1134/S1063782609030178

By:

Kostishko, B. M.;
Zolotov, A. V.;
Nagornov, Yu. S.

Publication type:

Article

Spectra of charged defects in glassy Ge0.285Pb0.15S0.565 thin layers.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 365, doi. 10.1134/S1063782609030191

By:

Castro, R. A.;
Bordovsky, V. A.;
Anisimov, N. I.;
Grabko, G. I.

Publication type:

Article

Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 368, doi. 10.1134/S1063782609030208

By:

Akopyan, A. A.;
Bachronov, Kh. N.;
Borkovskaya, O. Yu.;
Dmitruk, N. L.;
Yodgorova, D. M.;
Karimov, A. V.;
Konakova, R. V.;
Mamontova, I. B.

Publication type:

Article

Wave front reversal by high-intensity pulsed optical excitation of ZnO.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 269, doi. 10.1134/S1063782609030014

By:

Gruzintsev, A. N.

Publication type:

Article

Intracenter excited state of copper in Cu-compensated InP.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 275, doi. 10.1134/S1063782609030026

By:

Melnik, V. A.;
Pribylov, N. N.;
Rembeza, S. I.;
Makarenko, Ph. V.

Publication type:

Article

Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 278, doi. 10.1134/S1063782609030038

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Fruchart, D.;
Romaka, L. P.;
Goryn, A. M.;
Gorelenko, Yu. K.;
Dominuk, T. I.

Publication type:

Article

Electrical and optical properties of InN with periodic metallic in insertions.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 285, doi. 10.1134/S106378260903004X

By:

Komissarova, T. A.;
Shubina, T. V.;
Jmerik, V. N.;
Ivanov, S. V.;
Ryabova, L. I.;
Khokhlov, D. R.;
Vasson, A.;
Leymarie, J.;
Araki, T.;
Nanishi, Y.

Publication type:

Article

Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 289, doi. 10.1134/S1063782609030051

By:

Altybaev, G. S.;
Kumekov, S. E.;
Mahmudov, A. A.

Publication type:

Article

Recombination processes in pyrolytic cadmium sulfide films.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 292, doi. 10.1134/S1063782609030063

By:

Maiorova, T. L.;
Klyuev, V. G.

Publication type:

Article

Ferromagnetism in diluted Pb1 − x − yGe xCr yTe magnetic semiconductors.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 297, doi. 10.1134/S1063782609030075

By:

Skipetrov, E. P.;
Mikheev, M. G.;
Pakpour, F. A.;
Skipetrova, L. A.;
Pichugin, N. A.;
Slyn'ko, E. I.;
Slyn'ko, V. E.

Publication type:

Article

Anomalous relaxation of photoconductivity in silicon at high excitation levels.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 310, doi. 10.1134/S1063782609030099

By:

Borodovskii, P. A.;
Buldygin, A. F.;
Golod, S. V.

Publication type:

Article

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105

By:

Lobanov, D. N.;
Novikov, A. V.;
Kudryavtsev, K. E.;
Shengurov, D. V.;
Drozdov, Yu. N.;
Yablonskiy, A. N.;
Shmagin, V. B.;
Krasilnik, Z. F.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

Metal-insulator transition in n-3 C-SiC epitaxial films.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 318, doi. 10.1134/S1063782609030117

By:

Lebedev, A. A.;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Tregubova, A. S.;
Chernyaev, A. V.;
Shamshur, D. V.;
Skvortsova, M. O.

Publication type:

Article

Features of the infrared reflection spectra of SmS semiconductor in the homogeneity range.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 305, doi. 10.1134/S1063782609030087

By:

Ulashkevich, Yu. V.;
Kaminski, V. V.;
Golubkov, A. V.

Publication type:

Article

Cd xHg1 − xTe-based photodetector with the spectral characteristic controlled by the voltage.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 379, doi. 10.1134/S1063782609030221

By:

Ismailov, N. J.

Publication type:

Article

Dynamics of a multimode semiconductor laser with optical feedback.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 387, doi. 10.1134/S1063782609030245

By:

Koryukin, I. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 3

Effect of the duration of the growth process on the properties of GaN grown by the sublimation method.

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Yurii Viktorovich Gorelkinskii (1939–2008).

Room-temperature broadband InAsSb flip-chip photodiodes with λ<sub>cut off</sub> = 4.5 μm.

Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser.

Photoelectrochemical cells based on ternary compounds CuIn<sub>2 n + 1</sub>Se<sub>3 n + 2</sub> ( n = 3–6).

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer.

Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites.

The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots.

Anti-stokes luminescence of Zn<sub>0.75</sub>Cd<sub>0.25</sub>S microcrystals annealed in the presence of oxygen.

Photostructural reconstructions of As-S and As-Se semiconductor glasses.

Photoelectric and electrical properties of soluble polyphenylquinolines containing an oxygen or phenylamine bridge group between quinoline moieties.

Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field.

Spectra of charged defects in glassy Ge<sub>0.285</sub>Pb<sub>0.15</sub>S<sub>0.565</sub> thin layers.

Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface.

Wave front reversal by high-intensity pulsed optical excitation of ZnO.

Intracenter excited state of copper in Cu-compensated InP.

Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity.

Electrical and optical properties of InN with periodic metallic in insertions.

Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light.

Recombination processes in pyrolytic cadmium sulfide films.

Ferromagnetism in diluted Pb<sub>1 − x − y</sub>Ge<sub> x</sub>Cr<sub> y</sub>Te magnetic semiconductors.

Anomalous relaxation of photoconductivity in silicon at high excitation levels.

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.

Metal-insulator transition in n-3 C-SiC epitaxial films.

Features of the infrared reflection spectra of SmS semiconductor in the homogeneity range.

Cd<sub> x</sub>Hg<sub>1 − x</sub>Te-based photodetector with the spectral characteristic controlled by the voltage.

Dynamics of a multimode semiconductor laser with optical feedback.