Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 2

Results: 27

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274
By:
- Boitsov, A.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 223, doi. 10.1134/S1063782609020201
By:
- Antonov, A.;
- Gavrilenko, V.;
- Kuritsyn, D.;
- Morozov, S.;
- Spirin, K.;
- Kawaguchi, Y.;
- Komiyama, S.
Publication type:
Article
Transport in GaAs/Al xGa1− xAs superlattices with narrow minibands: Effects of interminiband tunneling.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 228, doi. 10.1134/S1063782609020213
By:
- Andronov, A.;
- Dodin, E.;
- Zinchenko, D.;
- Nozdrin, Yu.
Publication type:
Article
Transport in GaAs/Al xGa1− xAs superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 236, doi. 10.1134/S1063782609020225
By:
- Andronov, A.;
- Dodin, E.;
- Zinchenko, D.;
- Nozdrin, Yu.
Publication type:
Article
The least number of pairs of layers needed for observation of satellite-structured X-ray diffraction in superlattices. Measurements and calculations of elastic stresses in alternate layers of superlattices.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 245, doi. 10.1134/S1063782609020237
By:
- Kuznetsov, G.
Publication type:
Article
Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 253, doi. 10.1134/S1063782609020249
By:
- Dobrovolsky, A.;
- Komissarova, T.;
- Dashevsky, Z.;
- Kassiyan, V.;
- Akimov, B.;
- Ryabova, L.;
- Khokhlov, D.
Publication type:
Article
Nonlinear response of a double-well nanostructure with electron-electron interaction.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 257, doi. 10.1134/S1063782609020250
By:
- Elesin, V.;
- Kateev, I.;
- Remnev, M.
Publication type:
Article
Simulation of solar cells with quantum wells and comparison with conventional solar cells.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 262, doi. 10.1134/S1063782609020262
By:
- Sachenko, A.;
- Sokolovsky, I.
Publication type:
Article
Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 181, doi. 10.1134/S1063782609020110
By:
- Shengurov, V.;
- Chalkov, V.;
- Shengurov, D.;
- Denisov, S.
Publication type:
Article
Spinodal decomposition of ZnO-BeO alloys.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 135, doi. 10.1134/S1063782609020018
By:
- Emeljanova, O.;
- Strelchenko, S.;
- Usacheva, M.
Publication type:
Article
Nonuniformity of electrical properties for the PbTe single crystals in the growth direction.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 139, doi. 10.1134/S106378260902002X
By:
- Mustafayev, N.;
- Bagiyeva, G.;
- Ahmedova, G.;
- Agayev, Z.;
- Abdinov, D.
Publication type:
Article
Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 142, doi. 10.1134/S1063782609020031
By:
- Shaposhnikov, V.;
- Migas, D.;
- Borisenko, V.;
- Dorozhkin, N.
Publication type:
Article
Conductivity anisotropy in the doped Bi2Te3 single crystals.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 145, doi. 10.1134/S1063782609020043
By:
- Abdullaev, N.;
- Kakhramanov, S.;
- Kerimova, T.;
- Mustafayeva, K.;
- Nemov, S.
Publication type:
Article
Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se2.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 152, doi. 10.1134/S1063782609020055
By:
- Veliyev, R.;
- Sadikhov, R.;
- Kerimova, E.;
- Asadov, Yu.;
- Jabbarov, A.
Publication type:
Article
Conductivity of ultradispersed SnO2 ceramic in strong electric fields.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 156, doi. 10.1134/S1063782609020067
By:
- Vasiliev, R.;
- Rumyantseva, M.;
- Ryabova, L.;
- Gaskov, A.
Publication type:
Article
Terbium photoluminescence in yttrium aluminum garnet xerogels.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 158, doi. 10.1134/S1063782609020079
By:
- Maliarevich, G.;
- Gaponenko, N.;
- Mudryi, A.;
- Drozdov, Yu.;
- Stepikhova, M.;
- Stepanova, E.
Publication type:
Article
Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 162, doi. 10.1134/S1063782609020080
By:
- Morozova, N.;
- Mideros, D.;
- Danilevich, N.
Publication type:
Article
The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 168, doi. 10.1134/S1063782609020092
By:
- Daunov, M.;
- Kamilov, I.;
- Gabibov, S.
Publication type:
Article
Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/ p-CdTe heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 175, doi. 10.1134/S1063782609020109
By:
- Muzafarova, S.;
- Mirsagatov, S.;
- Dzhamalov, F.
Publication type:
Article
Analysis of forward current-voltage characteristics of nonideal Ti/4 H-SiC Schottky barriers.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 185, doi. 10.1134/S1063782609020122
By:
- Ivanov, P.;
- Potapov, A.;
- Samsonova, T.
Publication type:
Article
Effect of ferroelectric substrate on the conductivity of the semiconductor film.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 189, doi. 10.1134/S1063782609020134
By:
- Panakhov, M.;
- Agasiev, A.;
- Sarmasov, S.
Publication type:
Article
Properties of heterojunction based on pentacene and perylene derivatives.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 192, doi. 10.1134/S1063782609020146
By:
- Stakhira, P.;
- Cherpak, V.;
- Volynyuk, D.
Publication type:
Article
Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 197, doi. 10.1134/S1063782609020158
By:
- Gruzintsev, A.;
- Emelchenko, G.;
- Masalov, V.;
- Yakimov, E.;
- Barthou, C.;
- Maitre, A.
Publication type:
Article
Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 202, doi. 10.1134/S106378260902016X
By:
- Perov, A.;
- Solnyshkova, L.
Publication type:
Article
Difference-frequency generation in a butt-join diode laser.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 208, doi. 10.1134/S1063782609020171
By:
- Zvonkov, B.;
- Biryukov, A.;
- Nekorkin, S.;
- Aleshkin, V.;
- Gavrilenko, V.;
- Dubinov, A.;
- Maremyanin, K.;
- Morozov, S.
Publication type:
Article
Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 212, doi. 10.1134/S1063782609020183
By:
- Zaitsev, S.;
- Yakovlev, D.;
- Waag, A.
Publication type:
Article
Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 218, doi. 10.1134/S1063782609020195
By:
- Golovan, L.;
- Zabotnov, S.;
- Timoshenko, V.;
- Kashkarov, P.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 2

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.

Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector.

Transport in GaAs/Al<sub> x</sub>Ga<sub>1− x</sub>As superlattices with narrow minibands: Effects of interminiband tunneling.

Transport in GaAs/Al<sub> x</sub>Ga<sub>1− x</sub>As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations.

The least number of pairs of layers needed for observation of satellite-structured X-ray diffraction in superlattices. Measurements and calculations of elastic stresses in alternate layers of superlattices.

Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field.

Nonlinear response of a double-well nanostructure with electron-electron interaction.

Simulation of solar cells with quantum wells and comparison with conventional solar cells.

Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron.

Spinodal decomposition of ZnO-BeO alloys.

Nonuniformity of electrical properties for the PbTe single crystals in the growth direction.

Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides.

Conductivity anisotropy in the doped Bi<sub>2</sub>Te<sub>3</sub> single crystals.

Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se<sub>2</sub>.

Conductivity of ultradispersed SnO<sub>2</sub> ceramic in strong electric fields.

Terbium photoluminescence in yttrium aluminum garnet xerogels.

Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory.

The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor.

Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/ p-CdTe heterostructures.

Analysis of forward current-voltage characteristics of nonideal Ti/4 H-SiC Schottky barriers.

Effect of ferroelectric substrate on the conductivity of the semiconductor film.

Properties of heterojunction based on pentacene and perylene derivatives.

Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix.

Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice.

Difference-frequency generation in a butt-join diode laser.

Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures.

Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors.