Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 13
Results: 26
Study of the effect of surface modification of microcantilevers on their frequency properties.
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- Semiconductors, 2009, v. 43, n. 13, p. 1732, doi. 10.1134/S1063782609130259
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Some specific features of edge luminescence of CdS(O) in the context of the band’s anticrossing theory.
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- Semiconductors, 2009, v. 43, n. 13, p. 1628, doi. 10.1134/S1063782609130028
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Photoelectric processes in a five-diode vertically integrated spectrally selective photocell.
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- Semiconductors, 2009, v. 43, n. 13, p. 1682, doi. 10.1134/S1063782609130144
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Injection photodiodes based on low-resistivity ZnS single crystals.
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- Semiconductors, 2009, v. 43, n. 13, p. 1700, doi. 10.1134/S1063782609130181
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Optimization of technology of growing GaN heterostructures with using diffractometry analysis.
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- Semiconductors, 2009, v. 43, n. 13, p. 1647, doi. 10.1134/S1063782609130053
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A precise source follower with a low input current, based on field-effect transistors with a control barrier contact.
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- Semiconductors, 2009, v. 43, n. 13, p. 1663, doi. 10.1134/S1063782609130107
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Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined “dry” etching.
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- Semiconductors, 2009, v. 43, n. 13, p. 1660, doi. 10.1134/S1063782609130090
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Formation of acceptor centers under the action of redox media on the surface of Cd<sub> x</sub>Hg<sub>1 − x</sub>Te films.
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- Semiconductors, 2009, v. 43, n. 13, p. 1641, doi. 10.1134/S1063782609130041
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A linear temperature probe with a low power supply voltage.
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- Semiconductors, 2009, v. 43, n. 13, p. 1728, doi. 10.1134/S1063782609130247
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Study of the influence of design-technological factors on the conductivity and breakdown voltage of lateral double-diffused MOS transistors using numerical simulation.
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- Semiconductors, 2009, v. 43, n. 13, p. 1671, doi. 10.1134/S1063782609130120
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Simulation of a microprofile and electric field distribution in MIM structures.
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- Semiconductors, 2009, v. 43, n. 13, p. 1687, doi. 10.1134/S1063782609130156
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Layered structure of anodic SiO<sub>2</sub> films doped with phosphorus or boron.
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- Semiconductors, 2009, v. 43, n. 13, p. 1654, doi. 10.1134/S1063782609130077
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Thermodynamic aspects of formation of quantum-dimensional GaN-based heterostructures.
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- Semiconductors, 2009, v. 43, n. 13, p. 1635, doi. 10.1134/S106378260913003X
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Reliability of diagnostic methods based on low-frequency noise analysis.
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- Semiconductors, 2009, v. 43, n. 13, p. 1737, doi. 10.1134/S1063782609130260
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Study of electronic and magnetic properties of the CuFeS<sub>2</sub> semiconductor compound in the temperature range 77–300 K.
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- Semiconductors, 2009, v. 43, n. 13, p. 1650, doi. 10.1134/S1063782609130065
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Systematic features of defocused images in scanning electron microscopy and nanoscale size measurements.
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- Semiconductors, 2009, v. 43, n. 13, p. 1725, doi. 10.1134/S1063782609130235
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Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses.
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- Semiconductors, 2009, v. 43, n. 13, p. 1667, doi. 10.1134/S1063782609130119
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Analysis of specific growth features of zinc oxide nanocrystals from aqueous solutions to fabricate thin-film solar cells.
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- Semiconductors, 2009, v. 43, n. 13, p. 1657, doi. 10.1134/S1063782609130089
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A study of the effect of fast neutrons and electrons on white and blue LEDs.
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- Semiconductors, 2009, v. 43, n. 13, p. 1690, doi. 10.1134/S1063782609130168
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Theoretical treatment of the conductivity of textured inhomogeneous materials.
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- Semiconductors, 2009, v. 43, n. 13, p. 1623, doi. 10.1134/S1063782609130016
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Photonic structures and their application for measuring material parameters.
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- Semiconductors, 2009, v. 43, n. 13, p. 1677, doi. 10.1134/S1063782609130132
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Structure and properties of optical waveguides in stoichiometric LiNbO<sub>3</sub> crystals.
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- Semiconductors, 2009, v. 43, n. 13, p. 1704, doi. 10.1134/S1063782609130193
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f<sub>T</sub> × BV<sub>cbo</sub> product modeling for SiGe:C HBTs.
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- Semiconductors, 2009, v. 43, n. 13, p. 1709, doi. 10.1134/S106378260913020X
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Nanotube-based three-dimensional albumin composite obtained using continuous laser radiation.
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- Semiconductors, 2009, v. 43, n. 13, p. 1714, doi. 10.1134/S1063782609130211
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Features of ecological control in nanotechnologies in view of features of Ca<sub> y</sub>La<sub>1 − y</sub>F<sub>3 − y</sub> and La<sub> x</sub>Ca<sub>1 − x</sub>F<sub>2 + x</sub> structuring.
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- Semiconductors, 2009, v. 43, n. 13, p. 1719, doi. 10.1134/S1063782609130223
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Effects of the shape of spin gate elements on their magnetic and magnetoresistive characteristics.
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- Semiconductors, 2009, v. 43, n. 13, p. 1695, doi. 10.1134/S106378260913017X
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