Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 11

Results: 23

Influence of the dielectric phase on the photoluminescence spectrum of fractally structured nanocomposite lead selenide films.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1437, doi. 10.1134/S1063782609110086
By:
- Tropina, N. E.;
- Petrovskaya, Z. N.;
- Chernoglazova, I. O.
Publication type:
Article
Growing FeIn2S4 single crystals and fabrication of photosensitive structures on their basis.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190
By:
- Bodnar, I. V.;
- Pavlyukovets, S. A.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Structure and kinetics of crystallization of thin amorphous films of Yb1− xSm xAs4S7.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1492, doi. 10.1134/S1063782609110153
By:
- Hajiyev, E. Sh.;
- Madadzadeh, A. I.;
- Ismayilov, J. I.
Publication type:
Article
Photosensitive structures on single crystals of MnIn2S4: Preparation and properties.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Photoluminescence of CdSe nanoparticles in porous GaP.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1433, doi. 10.1134/S1063782609110074
By:
- Bacherikov, Yu. Yu.;
- Okhrimenko, O. V.;
- Optasyuk, S. V.;
- Yatsenko, Yu. I.;
- Kidalov, V. V.;
- Kolominska, E. V.;
- Vaksman, Yu. F.
Publication type:
Article
Field diffusion and nonequilibrium electron transport in polymers.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1466, doi. 10.1134/S1063782609110116
By:
- Nikitenko, V. R.;
- Tyutnev, A. P.;
- Korolev, N. A.
Publication type:
Article
Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1410, doi. 10.1134/S1063782609110037
By:
- Tsyplenkov, V. V.;
- Kovalevsky, K. A.;
- Shastin, V. N.
Publication type:
Article
Growth of ZnO nanocrystals by pulsed laser deposition on sapphire and silicon and the infrared spectra of the nanocrystals.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1532, doi. 10.1134/S1063782609110232
By:
- Bazhenov, A. V.;
- Fursova, T. N.;
- Maksimuk, M. Yu.;
- Kaidashev, E. M.;
- Kaidashev, V. E.;
- Misochko, O. V.
Publication type:
Article
Superconducting properties of silicon nanostructures.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1441, doi. 10.1134/S1063782609110098
By:
- Bagraev, N. T.;
- Klyachkin, L. E.;
- Koudryavtsev, A. A.;
- Malyarenko, A. M.;
- Romanov, V. V.
Publication type:
Article
Quantum supercurrent and Andreev reflection in silicon nanostructures.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1455, doi. 10.1134/S1063782609110104
By:
- Bagraev, N. T.;
- Klyachkin, L. E.;
- Koudryavtsev, A. A.;
- Malyarenko, A. M.;
- Oganesyan, G. A.;
- Poloskin, D. S.
Publication type:
Article
Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1499, doi. 10.1134/S1063782609110177
By:
- Bochkareva, N. I.;
- Bogatov, A. L.;
- Gorbunov, R. I.;
- Latyshev, F. E.;
- Zubrilov, A. S.;
- Tsyuk, A. I.;
- Klochkov, A. V.;
- Lelikov, Y. S.;
- Rebane, Y. T.;
- Shreter, Y. G.
Publication type:
Article
Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1420, doi. 10.1134/S1063782609110050
By:
- Dorofeev, S. G.;
- Kononov, N. N.;
- Ishchenko, A. A.;
- Vasil'ev, R. B.;
- Goldschtrakh, M. A.;
- Zaitseva, K. V.;
- Koltashev, V. V.;
- Plotnichenko, V. G.;
- Tikhonevich, O. V.
Publication type:
Article
Photosemiconducting properties of holographic media based on ferrocenyl-containing cooligomers of glycidyl carbazole with these oligomers sensitized by organic dye.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1473, doi. 10.1134/S1063782609110128
By:
- Davidenko, N. A.;
- Dehtarenko, S. V.;
- Getmanchuk, Yu. P.;
- Ishchenko, A. A.;
- Kozinetz, A. V.;
- Kostenko, L. I.;
- Mokrinskaya, E. V.;
- Studzinsky, S. L.;
- Skryshevsky, V. A.;
- Skulsky, N. A.;
- Tretyak, O. V.;
- Chuprina, N. G.
Publication type:
Article
Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1526, doi. 10.1134/S1063782609110220
By:
- Suprun, S. P.;
- Sherstyakova, V. N.;
- Fedosenko, E. V.
Publication type:
Article
Interphase interactions and the mechanism of current flow in Au-TiB x-AuGe- n-GaP ohmic contacts.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1428, doi. 10.1134/S1063782609110062
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kamalov, A. B.;
- Kapitanchuk, L. M.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Nasyrov, M. U.;
- Nevolin, P. V.
Publication type:
Article
Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1401, doi. 10.1134/S1063782609110013
By:
- Davydyuk, H. Ye.;
- Kevshyn, A. H.;
- Bozhko, V. V.;
- Halyan, V. V.
Publication type:
Article
Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1484, doi. 10.1134/S1063782609110141
By:
- Kolosov, S. A.;
- Klevkov, Yu. V.;
- Klokov, A. Yu.;
- Krivobok, V. S.;
- Sharkov, A. I.
Publication type:
Article
Injection currents in amorphous alloys of the Se-S system.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1479, doi. 10.1134/S106378260911013X
By:
- Djalilov, N. Z.;
- Damirov, G. M.
Publication type:
Article
Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1521, doi. 10.1134/S1063782609110219
By:
- Markov, L. K.;
- Smirnova, I. P.;
- Pavlyuchenko, A. S.;
- Arakcheeva, E. M.;
- Kulagina, M. M.
Publication type:
Article
Structure and optical properties of SiN x: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1514, doi. 10.1134/S1063782609110207
By:
- Korchagina, T. T.;
- Marin, D. V.;
- Volodin, V. A.;
- Popov, A. A.;
- Vergnat, M.
Publication type:
Article
Electrical properties of layered FeGaInS4 single crystals with an alternating current.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1407, doi. 10.1134/S1063782609110025
By:
- Niftiev, N. N.;
- Tagiev, O. B.;
- Muradov, M. B.;
- Mamedov, F. M.
Publication type:
Article
The nature of acceptor levels in the band gap of unannealed samples of PbTe single crystals.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1416, doi. 10.1134/S1063782609110049
By:
- Ahmedova, G. A.;
- Bagiyeva, G. Z.;
- Agauev, A. F.;
- Abdinov, J. Sh.
Publication type:
Article
Hopping conductivity in polycrystalline photoconductive Pb3O4 layers.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1496, doi. 10.1134/S1063782609110165
By:
- Avanesyan, V. T.;
- Potachev, S. A.;
- Baranova, E. P.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 11

Influence of the dielectric phase on the photoluminescence spectrum of fractally structured nanocomposite lead selenide films.

Growing FeIn<sub>2</sub>S<sub>4</sub> single crystals and fabrication of photosensitive structures on their basis.

Structure and kinetics of crystallization of thin amorphous films of Yb<sub>1− x</sub>Sm<sub> x</sub>As<sub>4</sub>S<sub>7</sub>.

Photosensitive structures on single crystals of MnIn<sub>2</sub>S<sub>4</sub>: Preparation and properties.

Photoluminescence of CdSe nanoparticles in porous GaP.

Field diffusion and nonequilibrium electron transport in polymers.

Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.

Growth of ZnO nanocrystals by pulsed laser deposition on sapphire and silicon and the infrared spectra of the nanocrystals.

Superconducting properties of silicon nanostructures.

Quantum supercurrent and Andreev reflection in silicon nanostructures.

Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells.

Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles.

Photosemiconducting properties of holographic media based on ferrocenyl-containing cooligomers of glycidyl carbazole with these oligomers sensitized by organic dye.

Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.

Interphase interactions and the mechanism of current flow in Au-TiB<sub> x</sub>-AuGe- n-GaP ohmic contacts.

Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons.

Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging.

Injection currents in amorphous alloys of the Se-S system.

Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.

Structure and optical properties of SiN<sub> x</sub>: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition.

Electrical properties of layered FeGaInS<sub>4</sub> single crystals with an alternating current.

The nature of acceptor levels in the band gap of unannealed samples of PbTe single crystals.

Hopping conductivity in polycrystalline photoconductive Pb<sub>3</sub>O<sub>4</sub> layers.