Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 10
Results: 24
Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes.
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- Semiconductors, 2009, v. 43, n. 10, p. 1351, doi. 10.1134/S1063782609100170
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Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses.
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- Semiconductors, 2009, v. 43, n. 10, p. 1298, doi. 10.1134/S106378260910008X
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Penetration (intercalation) of copper atoms under a graphene layer on iridium (111).
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- Semiconductors, 2009, v. 43, n. 10, p. 1255, doi. 10.1134/S1063782609100017
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Properties of interfaces in GaInP solar cells.
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- Semiconductors, 2009, v. 43, n. 10, p. 1363, doi. 10.1134/S1063782609100194
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Quenching of lasing in high power semiconductor laser.
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- Semiconductors, 2009, v. 43, n. 10, p. 1369, doi. 10.1134/S1063782609100200
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Conductivity of layers of a chalcogenide glassy semiconductor Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> in high electric fields.
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- Semiconductors, 2009, v. 43, n. 10, p. 1343, doi. 10.1134/S1063782609100157
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Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K.
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- Semiconductors, 2009, v. 43, n. 10, p. 1328, doi. 10.1134/S1063782609100121
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Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure.
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- Semiconductors, 2009, v. 43, n. 10, p. 1356, doi. 10.1134/S1063782609100182
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The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon.
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- Semiconductors, 2009, v. 43, n. 10, p. 1347, doi. 10.1134/S1063782609100169
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Effect of surface conduction in the semiconductor electrode on the distribution of the gas-discharge current.
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- Semiconductors, 2009, v. 43, n. 10, p. 1288, doi. 10.1134/S1063782609100066
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Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers.
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- Semiconductors, 2009, v. 43, n. 10, p. 1338, doi. 10.1134/S1063782609100145
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Suppression of electron transitions between split energy levels in three-barrier structures by a varying space-charge field.
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- Semiconductors, 2009, v. 43, n. 10, p. 1316, doi. 10.1134/S1063782609100108
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Effect of deep impurity on electric characteristics of epitaxial GaAs structures.
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- Semiconductors, 2009, v. 43, n. 10, p. 1292, doi. 10.1134/S1063782609100078
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The short-wavelength edge of intrinsic photoluminescence in diluted GaN<sub> x</sub>As<sub>1 − x</sub> alloys.
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- Semiconductors, 2009, v. 43, n. 10, p. 1267, doi. 10.1134/S1063782609100030
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Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors.
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- Semiconductors, 2009, v. 43, n. 10, p. 1379, doi. 10.1134/S1063782609100224
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Study of optical characteristics of structures with strongly strained In<sub> x</sub>Ga<sub>1 − x</sub>As quantum wells.
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- Semiconductors, 2009, v. 43, n. 10, p. 1334, doi. 10.1134/S1063782609100133
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Effect of irradiation on the properties of nanocrystalline silicon carbide films.
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- Semiconductors, 2009, v. 43, n. 10, p. 1322, doi. 10.1134/S106378260910011X
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Plane two-barrier resonance-tunneling structures: Resonance energies and resonance widths of quasi-stationary electron states.
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- Semiconductors, 2009, v. 43, n. 10, p. 1305, doi. 10.1134/S1063782609100091
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The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN).
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- Semiconductors, 2009, v. 43, n. 10, p. 1271, doi. 10.1134/S1063782609100042
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Effect of silicon-surface orientation in the bulk model of thermal oxidation.
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- Semiconductors, 2009, v. 43, n. 10, p. 1373, doi. 10.1134/S1063782609100212
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Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure.
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- Semiconductors, 2009, v. 43, n. 10, p. 1259, doi. 10.1134/S1063782609100029
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Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.
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- Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
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Thermoelectric and other phenomena in structures with nonequilibrium charge carriers and nanoparticles.
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- Semiconductors, 2009, v. 43, n. 10, p. 1280, doi. 10.1134/S1063782609100054
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Features of simultaneous diffusion of boron and gadolinium in silicon from nanoscale hybrid organic-inorganic films.
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- Semiconductors, 2009, v. 43, n. 10, p. 1394, doi. 10.1134/S1063782609100248
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