Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 9
Results: 22
Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224
- By:
- Publication type:
- Article
Vibrational spectroscopy of amorphous carbon modified with Pt.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1113, doi. 10.1134/S1063782608090194
- By:
- Publication type:
- Article
Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH<sub>4</sub> medium.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1098, doi. 10.1134/S1063782608090169
- By:
- Publication type:
- Article
Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1084, doi. 10.1134/S1063782608090145
- By:
- Publication type:
- Article
Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1104, doi. 10.1134/S1063782608090170
- By:
- Publication type:
- Article
Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1108, doi. 10.1134/S1063782608090182
- By:
- Publication type:
- Article
Specific features of use of wide-gap semi-insulating materials for recording of nuclear radiation.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1117, doi. 10.1134/S1063782608090200
- By:
- Publication type:
- Article
Diffusion of implanted sodium in oxygen-containing silicon.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1122, doi. 10.1134/S1063782608090212
- By:
- Publication type:
- Article
Study of single crystals of the CuIn<sub>3</sub>Se<sub>5</sub> ternary compound.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1030, doi. 10.1134/S1063782608090054
- By:
- Publication type:
- Article
Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1037, doi. 10.1134/S1063782608090078
- By:
- Publication type:
- Article
Variations in the impurity composition and microhardness of surface layers in silicon crystals caused by a magnetic field.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1044, doi. 10.1134/S106378260809008X
- By:
- Publication type:
- Article
Methylthiol adsorption on GaAs(100)-(2 × 4) surface: Ab initio quantum-chemical analysis.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1048, doi. 10.1134/S1063782608090091
- By:
- Publication type:
- Article
Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108
- By:
- Publication type:
- Article
Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1062, doi. 10.1134/S106378260809011X
- By:
- Publication type:
- Article
Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga<sub> x </sub>In<sub>1 − x </sub>As<sub> y </sub>P<sub>1 − y </sub>/GaInP/GaAs(001) heterostructures.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121
- By:
- Publication type:
- Article
Baric properties of InAs quantum dots.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1076, doi. 10.1134/S1063782608090133
- By:
- Publication type:
- Article
Edge luminescence of ZnO nanorods on high-intensity optical excitation.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1092, doi. 10.1134/S1063782608090157
- By:
- Publication type:
- Article
Phase formation and phase transformations in Bi-Te films with nanoscale thickness.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1009, doi. 10.1134/S1063782608090017
- By:
- Publication type:
- Article
Relaxation processes in conductivity of Cd<sub>1 − x </sub>Mn<sub> x </sub>Te crystals (0.02 < x < 0.55).
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1012, doi. 10.1134/S1063782608090029
- By:
- Publication type:
- Article
Relaxation of excited donor states in silicon with emission of intervalley phonons.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1016, doi. 10.1134/S1063782608090030
- By:
- Publication type:
- Article
Specific features of luminescence spectra of ZnS:O and ZnS:Cu(O) crystals in the context of the band anticrossing theory.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1023, doi. 10.1134/S1063782608090042
- By:
- Publication type:
- Article
Effect of magnetic field on the current-voltage characteristic of the n-GaAs- p-Ge heterojunction.
- Published in:
- Semiconductors, 2008, v. 42, n. 9, p. 1034, doi. 10.1134/S1063782608090066
- By:
- Publication type:
- Article