Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 3

Results: 24

Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 346, doi. 10.1134/S1063782608030196

By:

Tsai, J. H.;
Liu, W. Ch.;
Guo, D. F.;
Kang, Y. Ch.;
Chiu, Sh. Y.;
Lour, W. Sh.

Publication type:

Article

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 334, doi. 10.1134/S1063782608030172

By:

Gaman, V. I.;
Balyuba, V. I.;
Gritsyk, V. Yu.;
Davydova, T. a.;
Kalygina, V. M.

Publication type:

Article

Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 286, doi. 10.1134/S1063782608030081

By:

Drozdov, Yu. N.;
Krasilnik, Z. F.;
Kudryavtsev, K. E.;
Lobanov, D. N.;
Novikov, A. V.;
Shaleev, M. V.;
Shengurov, D. V.;
Shmagin, V. B.;
Yablonskiy, A. N.

Publication type:

Article

Features of manifestation of acceptor state of gold in silicon with quenched-in donors.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 266, doi. 10.1134/S1063782608030044

By:

Kiryukhin, A. D.;
Grigor'ev, V. V.;
Zuev, A. V.;
Zuev, V. V.

Publication type:

Article

Platinum nanoclusters encapsulated in amorphous carbon.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 325, doi. 10.1134/S1063782608030159

By:

Zvonareva, T. K.;
Sitnikova, A. A.;
Frolova, G. S.;
Ivanov-Omskiĭ, V. I.

Publication type:

Article

Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 370, doi. 10.1134/S106378260803024X

By:

Khludkov, S. S.

Publication type:

Article

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 354, doi. 10.1134/S1063782608030214

By:

Biryukov, A. A.;
Zvonkov, B. N.;
Nekorkin, S. M.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Kocharovskiĭ, V. V.;
Kocharovskiĭ, Vl. V.

Publication type:

Article

Silicon light-emitting diodes with strong near-band-edge luminescence.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 329, doi. 10.1134/S1063782608030160

By:

Emel'yanov, A. M.;
Sobolev, N. A.

Publication type:

Article

Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al0.35Ga0.65As:Be quantum wells.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 316, doi. 10.1134/S1063782608030135

By:

Averkiev, N. S.;
Ivanov, Yu. L.;
Krasivichev, A. A.;
Petrov, P. V.;
Sablina, N. I.;
Sedov, V. E.

Publication type:

Article

Effect of iodine impurity on relaxation of photoexcited silver chloride.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 272, doi. 10.1134/S1063782608030056

By:

Vostrikova, Yu. V.;
Klyuev, V. G.

Publication type:

Article

Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 277, doi. 10.1134/S1063782608030068

By:

Zobov, E. M.;
Zobov, M. E.;
Gabibov, F. S.;
Kamilov, I. K.;
Manyakhin, F. I.;
Naimi, E. K.

Publication type:

Article

Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 281, doi. 10.1134/S106378260803007X

By:

Baidullaeva, A.;
Veleshchuk, V. P.;
Vlasenko, A. I.;
Dauletmuratov, B. K.;
Lyashenko, O. V.;
Mozol', P. E.

Publication type:

Article

Optical orientation of holes in strained nanostructures.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 310, doi. 10.1134/S1063782608030123

By:

Averkiev, N. S.;
Sablina, N. I.

Publication type:

Article

Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 298, doi. 10.1134/S106378260803010X

By:

Drozdov, M. N.;
Vostokov, N. V.;
Danil'tsev, V. M.;
Drozdov, Yu. N.;
Moldavskaya, L. D.;
Murel', A. V.;
Shashkin, V. I.

Publication type:

Article

The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 291, doi. 10.1134/S1063782608030093

By:

Shkolnik, A. S.;
Savelyev, A. V.;
Karachinsky, L. Ya.;
Gordeev, N. Yu.;
Seisyan, R. P.;
Zegrya, G. G.;
Pellegrini, S.;
Buller, G. S.;
Evtikhiev, V. P.

Publication type:

Article

Wannier-stark effect in Ge/Si quantum dot superlattices.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 305, doi. 10.1134/S1063782608030111

By:

Sobolev, M. M.;
Cirlin, G. É.;
Tonkikh, A. A.;
Zakharov, N. D.

Publication type:

Article

On the modes of evaporation of Si and dopants in vacuum epitaxy procedures.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 251, doi. 10.1134/S1063782608030019

By:

Kuznetsov, V. P.;
Alyabina, N. A.;
Bozhenkin, V. A.;
Belova, O. V.;
Kuznetsov, M. V.

Publication type:

Article

Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 321, doi. 10.1134/S1063782608030147

By:

Belogorokhov, I. A.;
Ryabchikov, Yu. V.;
Tikhonov, E. V.;
Pushkarev, V. E.;
Breusova, M. O.;
Tomilova, L. G.;
Khokhlov, D. R.

Publication type:

Article

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 339, doi. 10.1134/S1063782608030184

By:

Orlov, M. L.

Publication type:

Article

High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 350, doi. 10.1007/s11453-008-3020-7

By:

Bezotosnyĭ, V. V.;
Vasil’eva, V. V.;
Vinokurov, D. A.;
Kapitonov, V. A.;
Krokhin, O. N.;
Leshko, A. Yu.;
Lyutetskiĭ, A. V.;
Murashova, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Popov, Yu. M.;
Slipchenko, S. O.;
Stankevich, A. L.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 358, doi. 10.1134/S1063782608030226

By:

Gruzintsev, A. N.;
Barthou, C.;
Benalloul, P.

Publication type:

Article

Effect of electron and proton irradiation on characteristics of SiC surface-barrier detectors of nuclear radiation.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 363, doi. 10.1134/S1063782608030238

By:

Ivanov, A. M.;
Strokan, N. B.;
Kozlovskiĭ, V. V.;
Lebedev, A. A.

Publication type:

Article

Simulation of near-surface proton-stimulated diffusion of boron in silicon.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 257, doi. 10.1134/S1063782608030020

By:

Aleksandrov, O. V.;
Kozlovski, V. V.

Publication type:

Article

Electrical properties of FeIn2Se4 layered single crystals for alternating current.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 263, doi. 10.1134/S1063782608030032

By:

Niftiev, N. N.;
Tagiev, O. B.;
Muradov, M. B.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 3

Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor.

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode.

Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.

Features of manifestation of acceptor state of gold in silicon with quenched-in donors.

Platinum nanoclusters encapsulated in amorphous carbon.

Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide.

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser.

Silicon light-emitting diodes with strong near-band-edge luminescence.

Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al<sub>0.35</sub>Ga<sub>0.65</sub>As:Be quantum wells.

Effect of iodine impurity on relaxation of photoexcited silver chloride.

Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals.

Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation.

Optical orientation of holes in strained nanostructures.

Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.

The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.

Wannier-stark effect in Ge/Si quantum dot superlattices.

On the modes of evaporation of Si and dopants in vacuum epitaxy procedures.

Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes.

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel.

High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y<sub>2</sub>O<sub>2</sub>S:Er,Yb luminophor.

Effect of electron and proton irradiation on characteristics of SiC surface-barrier detectors of nuclear radiation.

Simulation of near-surface proton-stimulated diffusion of boron in silicon.

Electrical properties of FeIn<sub>2</sub>Se<sub>4</sub> layered single crystals for alternating current.