Quasi-reflectionless potentials in semiconductor nanoheterostructures.
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- Semiconductors, 2008, v. 42, n. 13, p. 1455, doi. 10.1134/S1063782608130010
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 13
Results: 26
1
2
A study of the transport of charge carriers in coupled quantum regions.
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- Semiconductors, 2008, v. 42, n. 13, p. 1462, doi. 10.1134/S1063782608130022
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- Article
3
Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method.
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- Semiconductors, 2008, v. 42, n. 13, p. 1469, doi. 10.1134/S1063782608130034
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- Article
4
New technologies for production of polycrystalline silicon for solar power engineering.
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- Semiconductors, 2008, v. 42, n. 13, p. 1475, doi. 10.1134/S1063782608130046
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- Article
5
Photoluminescence of Si-doped GaAs epitaxial layers.
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- Semiconductors, 2008, v. 42, n. 13, p. 1480, doi. 10.1134/S1063782608130058
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- Article
6
Phenomenological description of dispersion of 8-60-nm-thick silicon thin films into drops on Al<sub>2</sub>O<sub>3</sub> inert surface.
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- Semiconductors, 2008, v. 42, n. 13, p. 1487, doi. 10.1134/S106378260813006X
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- Article
7
Study of properties of nanoscale lead zirconate titanate films.
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- Semiconductors, 2008, v. 42, n. 13, p. 1492, doi. 10.1134/S1063782608130071
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- Article
8
Carbon nanomaterial studied by atomic-force and electron microscopies.
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- Semiconductors, 2008, v. 42, n. 13, p. 1496, doi. 10.1134/S1063782608130083
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- Article
9
Effect of Te on the self-activated emission of ZnSe.
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- Semiconductors, 2008, v. 42, n. 13, p. 1499, doi. 10.1134/S1063782608130095
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- Article
10
Charge state distribution in the a-Si:H mobility gap.
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- Semiconductors, 2008, v. 42, n. 13, p. 1503, doi. 10.1134/S1063782608130101
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- Article
11
Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization.
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- Semiconductors, 2008, v. 42, n. 13, p. 1508, doi. 10.1134/S1063782608130113
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- Article
12
Effect of treatment technology for the surface of multicomponent oxide compounds with sillenite structure on the electron-transition kinetics in surface areas.
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- Semiconductors, 2008, v. 42, n. 13, p. 1512, doi. 10.1134/S1063782608130125
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- Article
13
Charge state of luminescence centers in the Si-SiO<sub>2</sub> structures subjected to sequential implantation with silicon and carbon ions.
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- Semiconductors, 2008, v. 42, n. 13, p. 1515, doi. 10.1134/S1063782608130137
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- Article
14
Local etching of silicon using a solid mask from porous aluminum oxide.
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- Semiconductors, 2008, v. 42, n. 13, p. 1519, doi. 10.1134/S1063782608130149
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- Article
15
Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors.
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- Semiconductors, 2008, v. 42, n. 13, p. 1522, doi. 10.1134/S1063782608130150
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- Article
16
Simulation and optimization of the CMOS structure with vertically integrated single-contact photodetectors with separation of colors in the visible spectral region.
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- Semiconductors, 2008, v. 42, n. 13, p. 1527, doi. 10.1134/S1063782608130162
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- Article
17
Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics.
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- Semiconductors, 2008, v. 42, n. 13, p. 1532, doi. 10.1134/S1063782608130174
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- Article
18
Magnetically controlled two-terminal device with negative differential resistance and N-type current-voltage characteristic.
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- Semiconductors, 2008, v. 42, n. 13, p. 1536, doi. 10.1134/S1063782608130186
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- Article
19
Intrinsic noise variation in an amplifier based on a heterojunction bipolar transistor amplifier in nonlinear mode.
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- Semiconductors, 2008, v. 42, n. 13, p. 1541, doi. 10.1134/S1063782608130198
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- Article
20
NRZ-to-NRZM code converter based on gallium-arsenide heterojunction bipolar transistors.
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- Semiconductors, 2008, v. 42, n. 13, p. 1545, doi. 10.1134/S1063782608130204
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- Article
21
Texturing problems in nanotechnology: Texture control.
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- Semiconductors, 2008, v. 42, n. 13, p. 1552, doi. 10.1134/S1063782608130216
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- Article
22
Analysis of the effect of material anisotropic properties on the eigenfrequency of ring cavities of micromechanical gyroscopes.
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- Semiconductors, 2008, v. 42, n. 13, p. 1557, doi. 10.1134/S1063782608130228
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- Article
23
MOS structures with amorphous tungsten trioxide for capacitive humidity sensors.
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- Semiconductors, 2008, v. 42, n. 13, p. 1561, doi. 10.1134/S106378260813023X
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- Article
24
Parameter estimation technique for sensitive elements of microaccelerometers and micromirrors.
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- Semiconductors, 2008, v. 42, n. 13, p. 1564, doi. 10.1134/S1063782608130241
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- Article
25
The use of the photorefractive effect for comprehensive three-dimensional local measurements of electrical and thermal parameters of silicon structures.
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- Semiconductors, 2008, v. 42, n. 13, p. 1569, doi. 10.1134/S1063782608130253
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- Article
26
Application of inversion voltammetry to microimpurity content control in synthetic sapphire.
- Published in:
- Semiconductors, 2008, v. 42, n. 13, p. 1573, doi. 10.1134/S1063782608130265
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- Article