Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 11

Results: 24

Model of thermal oxidation of silicon at the volume-reaction front.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1370, doi. 10.1134/S1063782608110249
By:
- Aleksandrov, O. V.;
- Dusj, A. I.
Publication type:
Article
Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1351, doi. 10.1134/S1063782608110213
By:
- Bobrova, E. A.;
- Omeljanovskaya, N. M.
Publication type:
Article
Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80–300 K.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1346, doi. 10.1134/S1063782608110201
By:
- Emel'yanov, A. M.
Publication type:
Article
Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1355, doi. 10.1134/S1063782608110225
By:
- Bochkareva, N. I.;
- Gorbunov, R. I.;
- Klochkov, A. V.;
- Lelikov, Yu. S.;
- Martynov, I. A.;
- Rebane, Yu. T.;
- Belov, A. S.;
- Shreter, Yu. G.
Publication type:
Article
Fast optical recording media based on semiconductor nanostructures for image recording and processing.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1362, doi. 10.1134/S1063782608110237
By:
- Kasherininov, P. G.;
- Tomasov, A. A.
Publication type:
Article
Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1342, doi. 10.1134/S1063782608110195
By:
- Lelikov, Yu. S.;
- Bochkareva, N. I.;
- Gorbunov, R. I.;
- Martynov, I. A.;
- Rebane, Yu. T.;
- Tarkin, D. V.;
- Shreter, Yu. G.
Publication type:
Article
Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1334, doi. 10.1134/S1063782608110171
By:
- Andreev, A. A.
Publication type:
Article
Formation of ohmic contacts to low-resistivity Cd1 − x Mg x Te alloys for photovolatic applications.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1286, doi. 10.1134/S1063782608110079
By:
- Parfenyuk, O. A.;
- Ilashchuk, M. I.;
- Ulyanitsky, K. S.
Publication type:
Article
Role of spontaneous polarization in the formation of NH-SiC/3 C-SiC/ NH-SiC structures based on silicon carbide polytypes.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1289, doi. 10.1134/S1063782608110080
By:
- Davydov, S. Yu.;
- Troshin, A. V.
Publication type:
Article
Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1292, doi. 10.1134/S1063782608110092
By:
- Kovalyuk, Z. D.;
- Politanska, O. A.;
- Sydor, O. N.;
- Maslyuk, V. T.
Publication type:
Article
Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1298, doi. 10.1134/S1063782608110109
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadookh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Vasiliev, V. V.
Publication type:
Article
Static current-voltage characteristics of Au/CaF2/ n-Si(111) MIS tunneling structures.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1304, doi. 10.1134/S1063782608110110
By:
- Suturin, S. M.;
- Banshchikov, A. G.;
- Sokolov, N. S.;
- Tyaginov, S. E.;
- Vexler, M. I.
Publication type:
Article
Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1309, doi. 10.1134/S1063782608110122
By:
- Shashkin, V. I.;
- Vostokov, N. V.
Publication type:
Article
Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1315, doi. 10.1134/S1063782608110134
By:
- Bessolov, V. N.;
- Blank, T. V.;
- Goldberg, Yu. A.;
- Konstantinov, O. V.;
- Posse, E. A.
Publication type:
Article
Magnetooptical properties of a single CdMnSe/CdMgSe quantum well.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1318, doi. 10.1134/S1063782608110146
By:
- Reshina, I. I.;
- Ivanov, S. V.
Publication type:
Article
Properties and structure of (As2Se3)1 − z (SnSe2) z − x (Tl2Se) x and (As2Se3)1 − z (SnSe) z − x (Tl2Se) x glasses
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1323, doi. 10.1134/S1063782608110158
By:
- Bordovsky, G. A.;
- Marchenko, A. V.;
- Terukov, E. I.;
- Seregin, P. P.;
- Likhodeeva, T. V.
Publication type:
Article
Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1255, doi. 10.1134/S1063782608110018
By:
- Bez'yazychnaya, T. V.;
- Zelenkovskii, V. M.;
- Gurskii, A. L.;
- Ryabtsev, G. I.
Publication type:
Article
Deposition-rate dependence of the height of GaAs-nanowires.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1259, doi. 10.1134/S106378260811002X
By:
- Sibirev, N. V.;
- Dubrovskii, V. G.;
- Cirlin, G. E.;
- Egorov, V. A.;
- Samsonenko, Yu. B.;
- Ustinov, V. M.
Publication type:
Article
Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1264, doi. 10.1134/S1063782608110031
By:
- Klevkov, Yu. V.;
- Kolosov, S. A.;
- Krivobok, V. S.;
- Martovisky, V. P.;
- Nikolaev, S. N.
Publication type:
Article
Energy spectrum of charge carriers in Ag2Te.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1270, doi. 10.1134/S1063782608110043
By:
- Aliev, F. F.;
- Jafarov, M. B.
Publication type:
Article
Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1274, doi. 10.1134/S1063782608110055
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.
Publication type:
Article
Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1282, doi. 10.1134/S1063782608110067
By:
- Belyaev, A. P.;
- Rubets, V. P.;
- Antipov, V. V.;
- Grishin, V. V.
Publication type:
Article
Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1327, doi. 10.1134/S106378260811016X
By:
- Undalov, Yu. K.;
- Terukov, E. I.;
- Gusev, O. B.;
- Lebedev, V. M.;
- Trapeznikova, I. N.
Publication type:
Article
Photosensitive properties of metal-containing polydisalicylidene azomethines.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1338, doi. 10.1134/S1063782608110183
By:
- Alexandrova, E. L.;
- Ivanov, A. G.;
- Heller, N. M.;
- Nadezhdina, L. B.;
- Shamanin, V. V.
Publication type:
Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 11

Model of thermal oxidation of silicon at the volume-reaction front.

Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge.

Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80–300 K.

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities.

Fast optical recording media based on semiconductor nanostructures for image recording and processing.

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN quantum wells.

Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport.

Formation of ohmic contacts to low-resistivity Cd<sub>1 − x </sub>Mg<sub> x </sub>Te alloys for photovolatic applications.

Role of spontaneous polarization in the formation of NH-SiC/3 C-SiC/ NH-SiC structures based on silicon carbide polytypes.

Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons.

Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.

Static current-voltage characteristics of Au/CaF<sub>2</sub>/ n-Si(111) MIS tunneling structures.

Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts.

Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.

Magnetooptical properties of a single CdMnSe/CdMgSe quantum well.

Properties and structure of (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe<sub>2</sub>)<sub> z − x </sub>(Tl<sub>2</sub>Se)<sub> x </sub> and (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe)<sub> z − x </sub>(Tl<sub>2</sub>Se)<sub> x </sub> glasses

Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice.

Deposition-rate dependence of the height of GaAs-nanowires.

Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe.

Energy spectrum of charge carriers in Ag<sub>2</sub>Te.

Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.

Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions.

Effect of electric field in the course of obtaining a-SiO<sub> x </sub>:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.

Photosensitive properties of metal-containing polydisalicylidene azomethines.