Radiative recombination channels in Si/Si<sub>1 − x </sub>Ge<sub> x </sub> nanostructures.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 67, doi. 10.1134/S1063782608010090
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 1
Results: 16
1
2
Injection-based photodetectors.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 112, doi. 10.1134/S1063782608010168
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- Publication type:
- Article
3
Metal-to-semiconductor emission of hot electrons excited on catalytic reaction.
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- Semiconductors, 2008, v. 42, n. 1, p. 59, doi. 10.1134/S1063782608010089
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- Publication type:
- Article
4
In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 74, doi. 10.1134/S1063782608010107
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- Publication type:
- Article
5
Limiting values of the quality factor of thermoelectric composites.
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- Semiconductors, 2008, v. 42, n. 1, p. 80, doi. 10.1134/S1063782608010119
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- Publication type:
- Article
6
High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p <sup>+</sup>- n junctions.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 86, doi. 10.1134/S1063782608010120
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- Publication type:
- Article
7
Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 92, doi. 10.1134/S1063782608010132
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- Publication type:
- Article
8
The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 99, doi. 10.1134/S1063782608010144
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- Publication type:
- Article
9
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m).
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 104, doi. 10.1007/s11453-008-1015-z
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- Publication type:
- Article
10
Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 1, doi. 10.1134/S1063782608010016
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- Publication type:
- Article
11
The linear stage of evolution of electron-hole avalanches in semiconductors.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 21, doi. 10.1134/S1063782608010028
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- Publication type:
- Article
12
Optical spectroscopy of free excitons in a CuInS<sub>2</sub> chalcopyrite semiconductor compound.
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- Semiconductors, 2008, v. 42, n. 1, p. 29, doi. 10.1134/S106378260801003X
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- Publication type:
- Article
13
Electrical properties of proton-irradiated CdSnAs<sub>2</sub>.
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- Semiconductors, 2008, v. 42, n. 1, p. 34, doi. 10.1134/S1063782608010041
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- Publication type:
- Article
14
Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system.
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- Semiconductors, 2008, v. 42, n. 1, p. 38, doi. 10.1134/S1063782608010053
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- Publication type:
- Article
15
Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 43, doi. 10.1134/S1063782608010065
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- Publication type:
- Article
16
Deep levels and electron transport in AlGaN/GaN heterostructures.
- Published in:
- Semiconductors, 2008, v. 42, n. 1, p. 52, doi. 10.1134/S1063782608010077
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- Publication type:
- Article