Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 9

Results: 20

Viktor Il’ich Fistul’ (dedicated to his 80th birthday).
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1132, doi. 10.1134/S1063782607090205
Publication type:
Article
Combustion and explosion of nanostructured silicon in microsystem devices.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1113, doi. 10.1134/S1063782607090175
By:
- Lazaruk, S. K.;
- Dolbik, A. V.;
- Labunov, V. A.;
- Borisenko, V. E.
Publication type:
Article
Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1101, doi. 10.1134/S1063782607090151
By:
- Nikitenko, V. R.;
- Tyutnev, A. P.
Publication type:
Article
Nonlinear effects in spin relaxation of cavity polaritons.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1080, doi. 10.1134/S1063782607090138
By:
- Solnyshkov, D. D.;
- Shelykh, I. A.;
- Glazov, M. M.;
- Malpuech, G.;
- Amand, T.;
- Renucci, P.;
- Marie, X.;
- Kavokin, A. V.
Publication type:
Article
Charge transport in silver chalcogenides in the region of phase transition.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1027, doi. 10.1134/S1063782607090047
By:
- Aliev, S. A.;
- Agaev, Z. F.;
- Zul’figarov, É. I.
Publication type:
Article
On the origin of the 1-eV band in photoluminescence from Cd1− x Zn x Te.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1033, doi. 10.1134/S1063782607090059
By:
- Sedov, V. E.;
- Matveev, O. A.;
- Terent’ev, A. I.;
- Zelenina, N. K.
Publication type:
Article
Metal-insulator transition in chromium-doped Pb1− x Ge x Te alloys.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1035, doi. 10.1134/S1063782607090060
By:
- Skipetrov, E. P.;
- Pakpur, F. A.;
- Pichugin, N. A.;
- Slyn’ko, V. E.
Publication type:
Article
Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1041, doi. 10.1134/S1063782607090072
By:
- Romaka, V. A.;
- Stadnyk, Yu. V.;
- Romaka, V. V.;
- Fruchart, D.;
- Gorelenko, Yu. K.;
- Chekurin, V. F.;
- Goryn’, A. M.
Publication type:
Article
Out-diffusion of impurity via the kick-out mechanism during gettering.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1048, doi. 10.1134/S1063782607090084
By:
- Aleksandrov, O. V.;
- Krivoruchko, A. A.
Publication type:
Article
A study of isotype photosensitive heterostructures (intrinsic oxide)- n-InSe prepared by long-term thermal oxidation.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1056, doi. 10.1134/S1063782607090096
By:
- Kovalyuk, Z. D.;
- Sydor, O. N.;
- Katerinchuk, V. N.;
- Netyaga, V. V.
Publication type:
Article
Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1060, doi. 10.1134/S1063782607090102
By:
- Avakyants, L. P.;
- Badgutdinov, M. L.;
- Bokov, P. Yu.;
- Chervyakov, A. V.;
- Shirokov, S. S.;
- Yunovich, A. E.;
- Bogdanov, A. A.;
- Vasil’eva, E. D.;
- Nikolaev, D. A.;
- Feopentov, A. V.
Publication type:
Article
Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1067, doi. 10.1134/S1063782607090114
By:
- Galkin, N. G.;
- Goroshko, D. L.;
- Polyarnyĭ, V. O.;
- Chusovitin, E. A.;
- Gutakovskiĭ, A. K.;
- Latyshev, A. V.;
- Khang, Y.
Publication type:
Article
Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1074, doi. 10.1134/S1063782607090126
By:
- Požela, J.;
- Požela, K.;
- Jucienė, V.
Publication type:
Article
On the temperature dependence of the thermoelectric power in disordered semiconductors.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1021, doi. 10.1134/S1063782607090035
By:
- Parfenov, O. E.;
- Shklyaruk, F. A.
Publication type:
Article
Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1005, doi. 10.1134/S1063782607090011
By:
- Alekseev, A. N.;
- Byrnaz, A. É;
- Krasovitsky, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel’sky, Yu. V.;
- Sokolov, I. A.;
- Sokolov, M. A.;
- Stepanov, M. V.;
- Shkurko, A. P.;
- Chalyi, V. P.
Publication type:
Article
The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1011, doi. 10.1134/S1063782607090023
By:
- Brudnyĭ, V. N.;
- Kolin, N. G.;
- Smirnov, L. S.
Publication type:
Article
Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1092, doi. 10.1134/S106378260709014X
By:
- Alekseev, P. S.;
- Yakunin, M. V.;
- Yassievich, I. N.
Publication type:
Article
Electroluminescence from nanostructured silicon embedded in anodic alumina.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1109, doi. 10.1134/S1063782607090163
By:
- Lazarouk, S. K.;
- Sasinovich, D. A.;
- Katsuba, P. S.;
- Labunov, V. A.;
- Leshok, A. A.;
- Borisenko, V. E.
Publication type:
Article
Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2- n-Si heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1117, doi. 10.1134/S1063782607090187
By:
- Zhdan, A.;
- Kukharskaya, N.;
- Naryshkina, V.;
- Chucheva, G.
Publication type:
Article
Electroluminescence spectra of ultraviolet light-emitting diodes based on p- n-heterostructures coated with phosphors.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1126, doi. 10.1134/S1063782607090199
By:
- Gal’china, N.;
- Kogan, L.;
- Soshchin, N.;
- Shirokov, S.;
- Yunovich, A.
Publication type:
Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 9

Viktor Il’ich Fistul’ (dedicated to his 80th birthday).

Combustion and explosion of nanostructured silicon in microsystem devices.

Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport.

Nonlinear effects in spin relaxation of cavity polaritons.

Charge transport in silver chalcogenides in the region of phase transition.

On the origin of the 1-eV band in photoluminescence from Cd<sub>1− x </sub>Zn<sub> x </sub>Te.

Metal-insulator transition in chromium-doped Pb<sub>1− x </sub>Ge<sub> x </sub>Te alloys.

Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity.

Out-diffusion of impurity via the kick-out mechanism during gettering.

A study of isotype photosensitive heterostructures (intrinsic oxide)- n-InSe prepared by long-term thermal oxidation.

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures.

Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure.

On the temperature dependence of the thermoelectric power in disordered semiconductors.

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.

Electroluminescence from nanostructured silicon embedded in anodic alumina.

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n <sup>+</sup>-Si-SiO<sub>2</sub>- n-Si heterostructures.

Electroluminescence spectra of ultraviolet light-emitting diodes based on p- n-heterostructures coated with phosphors.