Electrochemical pore formation mechanism in III–V crystals (Part II).
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 845, doi. 10.1134/S1063782607070123
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 7
Results: 16
1
2
1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 860, doi. 10.1134/S1063782607070147
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- Publication type:
- Article
3
Effect of deposition conditions on nanowhisker morphology.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 865, doi. 10.1134/S1063782607070159
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- Publication type:
- Article
4
The role of surface phonons in the formation of the spectrum of polaron states in quantum dots.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 822, doi. 10.1134/S1063782607070093
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- Publication type:
- Article
5
Electrochemical pore formation mechanism in III–V crystals (Part I).
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 832, doi. 10.1134/S1063782607070111
- By:
- Publication type:
- Article
6
Molecular state of A <sup>+</sup> centers in GaAs/AlGaAs quantum well.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 828, doi. 10.1134/S106378260707010X
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- Publication type:
- Article
7
Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 804, doi. 10.1134/S1063782607070068
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- Publication type:
- Article
8
Optical properties of doped bismuth telluride crystals in the region of plasma effects.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 786, doi. 10.1134/S1063782607070032
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- Publication type:
- Article
9
High-efficiency LEDs based on n-GaSb/ p-GaSb/ n-GaInAsSb/ P-AlGaAsSb type-II thyristor heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 855, doi. 10.1134/S1063782607070135
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- Publication type:
- Article
10
Silicon photodiode with a grid p-n junction.
- Published in:
- 2007
- By:
- Publication type:
- Correction Notice
11
Features of erbium electroluminescence observed in disordered semiconductors and related to the difference in the localized state charge.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 799, doi. 10.1134/S1063782607070056
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- Publication type:
- Article
12
Atomic and electron structure of the GaAs (001) surface.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 810, doi. 10.1134/S106378260707007X
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- Publication type:
- Article
13
Lateral conductivity of p-type doped Si/Ge island structures.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 818, doi. 10.1134/S1063782607070081
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- Publication type:
- Article
14
The effect of irradiation on the properties of SiC and devices based on this compound.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 745, doi. 10.1134/S1063782607070019
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- Publication type:
- Article
15
The origin of edge luminescence in diffusion ZnSe:Sn layers.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 784, doi. 10.1134/S1063782607070020
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- Publication type:
- Article
16
Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor.
- Published in:
- Semiconductors, 2007, v. 41, n. 7, p. 790, doi. 10.1134/S1063782607070044
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- Publication type:
- Article