Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 6

Results: 24

Vacancy kinetics in heteropolytype epitaxy of SiC.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 621, doi. 10.1134/S1063782607060012

By:

Davydov, S.;
Lebedev, A.

Publication type:

Article

Threshold stresses for motion of dislocations in extrinsic semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 625, doi. 10.1134/S1063782607060024

By:

Petukhov, B.

Publication type:

Article

Conductivity and photoconductivity of polymeric composites containing heteropolynuclear Cu(II)/Mn(II) complex in the presence of ionic polymethine dyes.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 634, doi. 10.1134/S1063782607060048

By:

Davidenko, N.;
Kokozay, V.;
Ishchenko, A.;
Beznishchenko, A.;
Makhan’kova, V.;
Spitsyna, N.;
Lobach, A.;
Davidenko, I.;
Popenaka, A.

Publication type:

Article

Ferromagnetism and anomalous transport in GaAs doped by implantation of Mn and Mg ions.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 655, doi. 10.1134/S1063782607060073

By:

Kul’bacinskiĭ, V.;
Gurin, P.;
Danilov, Yu.;
Malysheva, E.;
Horikoshi, Y.;
Onomitsu, K.

Publication type:

Article

Theory of stationary impact-ionization plane waves in semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 737, doi. 10.1134/S1063782607060243

By:

Kyuregyan, A.

Publication type:

Article

Effect of the bias electric field on the spectral distribution of the photodielectric effect in the Schottky-barrier structures based on the cadmium-zinc telluride crystals.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 689, doi. 10.1134/S1063782607060140

By:

Komar’, V.;
Puzikov, V.;
Chugai, O.;
Nalivaiko, D.;
Sulima, S.;
Abashin, S.

Publication type:

Article

Special features of annealing of radiation defects in irradiated p-Si crystals.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 631, doi. 10.1134/S1063782607060036

By:

Pagava, T.

Publication type:

Article

Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 641, doi. 10.1134/S106378260706005X

By:

Gorkavenko, T.;
Zubkova, S.;
Rusina, L.

Publication type:

Article

The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 699, doi. 10.1134/S1063782607060164

By:

Mordkovich, V.;
Mokrushin, A.;
Omel’yanovskaya, N.

Publication type:

Article

Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 704, doi. 10.1134/S1063782607060176

By:

Zav’yalov, D.;
Kryuchkov, S.;
Kukhar’, E.

Publication type:

Article

Electrical properties of undoped high-resistivity n-CdTe polycrystals.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 651, doi. 10.1134/S1063782607060061

By:

Klevkov, Yu.;
Kolosov, S.;
Plotnikov, A.

Publication type:

Article

Random lasing in vertical ZnO nanorods.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 708, doi. 10.1134/S1063782607060188

By:

Gruzintsev, A.;
Red’kin, A.;
Makoveĭ, Z.;
Yakimov, E.;
Barthou, C.

Publication type:

Article

Preparation and optical properties of the co-doped ZnTe single crystals.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 660, doi. 10.1134/S1063782607060085

By:

Vaksman, Yu.;
Nitsuk, Yu.;
Pavlov, V.;
Purtov, Yu.;
Nasibov, A.;
Shapkin, P.

Publication type:

Article

Photoconductivity of the Pb0.75Sn0.25Te:In alloy in an alternating electric field.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 663, doi. 10.1134/S1063782607060097

By:

Kozhanov, A.;
Nikorich, A.;
Ryabova, L.;
Khokhlov, D.;
Dmitriev, A.;
Shklover, V.

Publication type:

Article

Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si1 − x Ge x alloys (0 < x < 0.057).

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 666, doi. 10.1134/S1063782607060103

By:

Veinger, A.;
Zabrodskiĭ, A.;
Tisnek, T.;
Goloshchapov, S.;
Abrosimov, N.

Publication type:

Article

The effect of narrowing of the band gap on surface recombination in silicon.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 673, doi. 10.1134/S1063782607060115

By:

Sachenko, A.;
Sokolovsky, I.

Publication type:

Article

Structural and electrical properties of the Ge x Si1− x /Si heterojunctions obtained by the method of direct bonding.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 679, doi. 10.1134/S1063782607060127

By:

Argunova, T.;
Belyakova, E.;
Grekhov, I.;
Zabrodskiĭ, A.;
Kostina, L.;
Sorokin, L.;
Shmidt, N.;
Yi, J.;
Jung, J.;
Je, J.;
Abrosimov, N.

Publication type:

Article

Transfer ratio of Langmuir-Blodgett films as an indicator of the single-crystal silicon surface modified by polyionic layers.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 684, doi. 10.1134/S1063782607060139

By:

Yashchenok, A.;
Gorin, D.;
Pankin, K.;
Lomova, M.;
Shtykov, S.;
Klimov, B.;
Kurochkina, G.;
Grachev, M.

Publication type:

Article

On the electron affinity of silicon carbide polytypes.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 696, doi. 10.1134/S1063782607060152

By:

Davydov, S.

Publication type:

Article

Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 713, doi. 10.1134/S106378260706019X

By:

Gruzintsev, A.;
Red’kin, A.;
Makoveĭ, Z.;
Yakimov, E.;
Barthou, C.;
Benalloul, P.

Publication type:

Article

A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 718, doi. 10.1134/S1063782607060206

By:

Vanyushin, I.;
Gergel, V.;
Gontar’, V.;
Zimoglyad, V.;
Tishin, Yu.;
Kholodnov, V.;
Shcheleva, I.

Publication type:

Article

Color capabilities of ZnS:(CuCl,Ga) luminophores depending on the sequence of doping with CuCl and gallium.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 723, doi. 10.1134/S1063782607060218

By:

Bacherikov, Yu.;
Kitsyuk, N.

Publication type:

Article

High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 727, doi. 10.1134/S106378260706022X

By:

Lantratov, V.;
Kalyuzhnyĭ, N.;
Mintairov, S.;
Timoshina, N.;
Shvarts, M.;
Andreev, V.

Publication type:

Article

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231

By:

Andreev, V.;
Evstropov, V.;
Kalinovskiĭ, V.;
Lantratov, V.;
Khvostikov, V.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 6

Vacancy kinetics in heteropolytype epitaxy of SiC.

Threshold stresses for motion of dislocations in extrinsic semiconductors.

Conductivity and photoconductivity of polymeric composites containing heteropolynuclear Cu(II)/Mn(II) complex in the presence of ionic polymethine dyes.

Ferromagnetism and anomalous transport in GaAs doped by implantation of Mn and Mg ions.

Theory of stationary impact-ionization plane waves in semiconductors.

Effect of the bias electric field on the spectral distribution of the photodielectric effect in the Schottky-barrier structures based on the cadmium-zinc telluride crystals.

Special features of annealing of radiation defects in irradiated p-Si crystals.

Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides.

The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures.

Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field.

Electrical properties of undoped high-resistivity n-CdTe polycrystals.

Random lasing in vertical ZnO nanorods.

Preparation and optical properties of the co-doped ZnTe single crystals.

Photoconductivity of the Pb<sub>0.75</sub>Sn<sub>0.25</sub>Te:In alloy in an alternating electric field.

Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si<sub>1 − x </sub>Ge<sub> x </sub> alloys (0 < x < 0.057).

The effect of narrowing of the band gap on surface recombination in silicon.

Structural and electrical properties of the Ge<sub> x </sub>Si<sub>1− x </sub>/Si heterojunctions obtained by the method of direct bonding.

Transfer ratio of Langmuir-Blodgett films as an indicator of the single-crystal silicon surface modified by polyionic layers.

On the electron affinity of silicon carbide polytypes.

Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation.

A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode.

Color capabilities of ZnS:(CuCl,Ga) luminophores depending on the sequence of doping with CuCl and gallium.

High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD.

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.