Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 5

Results: 24

Low-temperature (77 K) impurity breakdown in p-type 4 H-SiC.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 542, doi. 10.1134/S1063782607050120

By:

Grekhov, I. V.;
Ivanov, P. A.;
Potapov, A. S.;
Samsonova, T. P.

Publication type:

Article

X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 555, doi. 10.1134/S1063782607050156

By:

Rogozin, I. V.;
Kotlyarevsky, M. B.

Publication type:

Article

Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 560, doi. 10.1134/S1063782607050168

By:

Zhachuk, R. A.;
Teys, S. A.;
Olshanetsky, B. Z.

Publication type:

Article

Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 616, doi. 10.1134/S1063782607050247

By:

Sobolev, N. A.;
Emel'yanov, A. M.;
Zabrodskiĭ, V. V.;
Zabrodskaya, N. V.;
Sukhanov, V. L.;
Shek, E. I.

Publication type:

Article

Charge transport in detectors on the basis of gallium arsenide compensated with chromium.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 612, doi. 10.1134/S1063782607050235

By:

Ayzenshtat, G. I.;
Lelekov, M. A.;
Novikov, V. A.;
Okaevich, L. S.;
Tolbanov, O. P.

Publication type:

Article

Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 596, doi. 10.1134/S1063782607050211

By:

Zerova, V. L.;
Vorob'ev, L. E.;
Firsov, D. A.;
Towe, E.

Publication type:

Article

Anomalous electron spin splitting in InAs pumped by injection.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 570, doi. 10.1134/S1063782607050181

By:

Terent'ev, Ya.;
Lyublinskaya, O. G.;
Toropov, A. A.;
Solov'ev, V. A.;
Sorokin, S. V.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193

By:

Sizov, D. S.;
Zavarin, E. E.;
Ledentsov, N. N.;
Lundin, V. V.;
Musikhin, Yu. G.;
Sizov, V. S.;
Suris, R. A.;
Tsatsul'nikov, A. F.

Publication type:

Article

Low-temperature recrystallization of Ge nanolayers on ZnSe.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 590, doi. 10.1134/S106378260705020X

By:

Suprun, S. P.;
Fedosenko, E. V.

Publication type:

Article

Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 606, doi. 10.1134/S1063782607050223

By:

Zhukov, A. E.;
Kovsh, A. R.;
Nikitina, E. V.;
Ustinov, V. M.;
Alferov, Zh. I.

Publication type:

Article

White electroluminescence from ZnO/GaN structures.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 564, doi. 10.1134/S106378260705017X

By:

Titkov, I. E.;
Zubrilov, A. S.;
Delimova, L. A.;
Mashovets, D. V.;
Liniĭchuk, I. A.;
Grekhov, I. V.

Publication type:

Article

AFM application for in situ study of adsorption processes.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 495, doi. 10.1134/S1063782607050016

By:

Sosnov, E. A.;
Belova, S. A.;
Malygin, A. A.

Publication type:

Article

AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 498, doi. 10.1134/S1063782607050028

By:

Sosnov, E. A.;
Dorofeev, V. P.;
Malkov, A. A.;
Malygin, A. A.;
Kulikov, N. A.;
Brusilovsky, G. L.

Publication type:

Article

Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 502, doi. 10.1134/S106378260705003X

By:

Baryshev, S. V.;
Bobyl, A. V.;
Kostyleva, O. P.

Publication type:

Article

Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 507, doi. 10.1134/S1063782607050041

By:

Trukhanov, S. V.;
Lobanovski, L. S.;
Bushinsky, M. V.;
Khomchenko, V. A.;
Fedotova, V. V.;
Troyanchuk, I. O.;
Szymczak, H.

Publication type:

Article

Cathodoluminescence properties of yttrium aluminum garnet doped with Eu2+ and Eu3+ ions.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 512, doi. 10.1134/S1063782607050053

By:

Trofimov, A. N.;
Petrova, M. A.;
Zamoryanskaya, M. V.

Publication type:

Article

Simulation of e-beam penetration through multilayer structures.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 516, doi. 10.1134/S1063782607050065

By:

Borisov, S. S.;
Zaitsev, S. I.

Publication type:

Article

Reconstruction of the InSb (111)In surface as a result of sulfur adsorption.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 521, doi. 10.1134/S1063782607050077

By:

Lebedev, M. V.;
Shimomura, M.;
Fukuda, Y.

Publication type:

Article

Alternating current conductivity and electron spin resonance of the Cd1 − x FexTe alloys.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 526, doi. 10.1134/S1063782607050089

By:

Zhukovski, P.;
Partyka, Ya.;
Vengerek, P.;
Koltunovich, T.;
Sidorenko, Yu.;
Stelmakh, V.;
Lapchuk, N.

Publication type:

Article

Bistable amphoteric centers with reverse order of electron levels in semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 531, doi. 10.1134/S1063782607050090

By:

Nikitina, A. G.;
Zuev, V. V.

Publication type:

Article

Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 537, doi. 10.1134/S1063782607050107

By:

Sobolev, N. A.;
Emel'yanov, A. M.;
Sakharov, V. I.;
Serenkov, I. T.;
Shek, E. I.;
Tetel'baum, D. I.

Publication type:

Article

Specific features of electrical properties of the InxGa1 − x N alloy.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 540, doi. 10.1134/S1063782607050119

By:

Komissarova, T. A.;
Matrosov, N. N.;
Ryabova, L. I.;
Khokhlov, D. R.;
Jmerik, V. N.;
Ivanov, S. V.

Publication type:

Article

Quasi-local states of Sn in Bi2Te3 according to the studies of galvanomagnetic effects in classical and quantizing magnetic fields.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 546, doi. 10.1134/S1063782607050132

By:

Laiho, R.;
Nemov, S. A.;
Lashkul, A. V.;
Lähderanta, E.;
Svechnikova, T. E.;
Dvornik, D. S.

Publication type:

Article

The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 550, doi. 10.1134/S1063782607050144

By:

Kovalyuk, Z. D.;
Litovchenko, P. G.;
Politanska, O. A.;
Sydor, O. N.;
Katerynchuk, V. N.;
Lastovetsky, V. F.;
Litovchenko, O. P.;
Dubovoy, V. K.;
Polivtsev, L. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 5

Low-temperature (77 K) impurity breakdown in p-type 4 H-SiC.

X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy.

Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy.

Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus.

Charge transport in detectors on the basis of gallium arsenide compensated with chromium.

Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields.

Anomalous electron spin splitting in InAs pumped by injection.

Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.

Low-temperature recrystallization of Ge nanolayers on ZnSe.

Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.

White electroluminescence from ZnO/GaN structures.

AFM application for in situ study of adsorption processes.

AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses.

Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.

Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites.

Cathodoluminescence properties of yttrium aluminum garnet doped with Eu<sup>2+</sup> and Eu<sup>3+</sup> ions.

Simulation of e-beam penetration through multilayer structures.

Reconstruction of the InSb (111)In surface as a result of sulfur adsorption.

Alternating current conductivity and electron spin resonance of the Cd<sub>1 − x </sub>Fe<sub>x</sub>Te alloys.

Bistable amphoteric centers with reverse order of electron levels in semiconductors.

Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing.

Specific features of electrical properties of the In<sub>x</sub>Ga<sub>1 − x </sub>N alloy.

Quasi-local states of Sn in Bi<sub>2</sub>Te<sub>3</sub> according to the studies of galvanomagnetic effects in classical and quantizing magnetic fields.

The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures.