Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 4

Results: 26

EBIC characterization of light-emitting structures based on GaN.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 491, doi. 10.1134/S1063782607040264
By:
- Shmidt, N.M.;
- Vergeles, P.S.;
- Yakimov, E.B.
Publication type:
Article
Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 487, doi. 10.1134/S1063782607040252
By:
- Afrosimov, V.V.;
- Il’in, R.R.;
- Sakharov, V.I.;
- Serenkov, I.T.
Publication type:
Article
Evolution of luminescence properties of natural oxide on silicon and porous silicon.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 482, doi. 10.1134/S1063782607040240
By:
- Sokolov, R.V.;
- Zamoryanskaya, M.V.;
- Kolesnikova, E.V.;
- Sokolov, V.I.
Publication type:
Article
Cathodoluminescence of laser AIIBVI heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 478, doi. 10.1134/S1063782607040239
By:
- Ivanov, A.S.;
- Vasilev, V.I.;
- Sedova, I.V.;
- Sorokin, S.A.;
- Sitnikova, A.A.;
- Konnikov, S.G.;
- Popova, T.B.;
- Zamoryanskaya, M.V.
Publication type:
Article
Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 473, doi. 10.1134/S1063782607040227
By:
- Khrustalev, V.S.;
- Bobyl, A.V.;
- Konnikov, S.G.;
- Maleev, N.A.;
- Zamoryanskaya, M.V.
Publication type:
Article
AFM investigation of thin post-baked photoresistive films for microsystem technology application.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 469, doi. 10.1134/S1063782607040215
By:
- Alexandrov, S.E.;
- Speshilova, A.B.;
- Soloviev, Y.V.;
- Ermeychik, O.I.
Publication type:
Article
Cathodoluminescence study of silicon oxide-silicon interface.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 462, doi. 10.1134/S1063782607040203
By:
- Zamoryanskaya, M.V.;
- Sokolov, V.I.
Publication type:
Article
Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 458, doi. 10.1134/S1063782607040197
By:
- Yu, X.;
- Vyvenko, O.;
- Kittler, M.;
- Seifert, W.;
- Mtchedlidze, T.;
- Arguirov, T.;
- Reiche, M.
Publication type:
Article
Multimodal luminescence spectra of ion-implanted silica.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 453, doi. 10.1134/S1063782607040185
By:
- Fitting, H.-J.;
- Salh, Roushdey;
- Schmidt, B.
Publication type:
Article
Initial stages of gold adsorption on silicon stepped surface at elevated temperatures.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 448, doi. 10.1134/S1063782607040173
By:
- Kosolobov, S.S.;
- Song, Se Ahn;
- Rodyakina, E.E.;
- Latyshev, A.V.
Publication type:
Article
Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 444, doi. 10.1134/S1063782607040161
By:
- Burylova, I.V.;
- Petrov, V.I.;
- Snopova, M.G.;
- Stepovich, M.A.
Publication type:
Article
Material-induced shunts in multicrystalline silicon solar cells.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 440, doi. 10.1134/S106378260704015X
By:
- Breitenstein, O.;
- Bauer, J.;
- Rakotoniaina, J.P.
Publication type:
Article
Photoluminescence study on defects in multicrystalline silicon.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 436, doi. 10.1134/S1063782607040148
By:
- Arguirov, T.;
- Seifer, W.;
- Jia, G.;
- Kittler, M.
Publication type:
Article
STM and LEED studies of atomically ordered terraced Si(557) surfaces.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 431, doi. 10.1134/S1063782607040136
By:
- Chaika, A.N.;
- Bozhko, S.I.;
- Ionov, A.M.;
- Myagkov, A.N.;
- Abrosimov, N.V.
Publication type:
Article
The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO4-EuPO4.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 427, doi. 10.1134/S1063782607040124
By:
- Burakov, B.E.;
- Garbuzov, V.M.;
- Kitsay, A.A.;
- Zirlin, V.A.;
- Petrova, M.A.;
- Domracheva, Ya.V.;
- Zamoryanskaya, M.V.;
- Kolesnikova, E.V.;
- Yagovkina, M.A.;
- Orlova, M.P.
Publication type:
Article
Micro-and nano-structures in silicon studied by DLTS and scanning probe methods.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 421, doi. 10.1134/S1063782607040112
By:
- Cavalcoli, D.;
- Cavallini, A.;
- Rossi, M.;
- Pizzini, S.
Publication type:
Article
Photoinduced transient spectroscopy of defect centers in GaN and SiC.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 414, doi. 10.1134/S1063782607040100
By:
- Kamiński, P.;
- Kozłowski, R.;
- Kozubal, M.;
- Żelazko, J.;
- Miczuga, M.;
- Pawłowski, M.
Publication type:
Article
EBIC measurements of small diffusion length in semiconductor structures.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 411, doi. 10.1134/S1063782607040094
By:
- Yakimov, E.B.;
- Borisov, S.S.;
- Zaitsev, S.I.
Publication type:
Article
Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 407, doi. 10.1134/S1063782607040082
By:
- Krapukhin, V.V.;
- Vergeles, P.S.;
- Yakimov, E.B.
Publication type:
Article
EBIC characterization of strained Si/SiGe heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 402, doi. 10.1134/S1063782607040070
By:
- Yakimov, E.B.;
- Zhang, R.H.;
- Rozgonyi, G.A.;
- Seacrist, M.
Publication type:
Article
IBIC characterization of charge transport in CdTe:Cl.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 395, doi. 10.1134/S1063782607040069
By:
- Sellin, P.J.;
- Davies, A.W.;
- Boroumand, F.;
- Lohstroh, A.;
- Özsan, M.E.;
- Parkin, J.;
- Veale, M.
Publication type:
Article
Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 391, doi. 10.1134/S1063782607040057
By:
- Jia, G.;
- Arguirov, T.;
- Kittler, M.;
- Su, Z.;
- Yang, D.;
- Sha, J.
Publication type:
Article
Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 387, doi. 10.1134/S1063782607040045
By:
- Kolesnikova, E.;
- Mynbaeva, M.;
- Sitnikova, A.
Publication type:
Article
Si and Ge nanocluster formation in silica matrix.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 381, doi. 10.1134/S1063782607040033
By:
- Salh, Roushdey;
- Fitting, L.;
- Kolesnikova, E.;
- Sitnikova, A.;
- Zamoryanskaya, M.;
- Schmidt, B.;
- Fitting, H.
Publication type:
Article
Structural peculiarities of 4 H-SiC irradiated by Bi ions.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 376, doi. 10.1134/S1063782607040021
By:
- Kalinina, E.V.;
- Skuratov, V.A.;
- Sitnikova, A.A.;
- Kolesnikova, E.V.;
- Tregubova, A.S.;
- Shcheglov, M.P.
Publication type:
Article
In-depth resolution for LBIC technique by two-photon absorption.
Published in:
Semiconductors, 2007, v. 41, n. 4, p. 371, doi. 10.1134/S106378260704001X
By:
- Wan, D.;
- Pouget, V.;
- Douin, A.;
- Jaulent, P.;
- Lewis, D.;
- Fouillat, P.
Publication type:
Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 4

EBIC characterization of light-emitting structures based on GaN.

Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique.

Evolution of luminescence properties of natural oxide on silicon and porous silicon.

Cathodoluminescence of laser A<sup>II</sup>B<sup>VI</sup> heterostructures.

Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging.

AFM investigation of thin post-baked photoresistive films for microsystem technology application.

Cathodoluminescence study of silicon oxide-silicon interface.

Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding.

Multimodal luminescence spectra of ion-implanted silica.

Initial stages of gold adsorption on silicon stepped surface at elevated temperatures.

Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam.

Material-induced shunts in multicrystalline silicon solar cells.

Photoluminescence study on defects in multicrystalline silicon.

STM and LEED studies of atomically ordered terraced Si(557) surfaces.

The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO<sub>4</sub>-EuPO<sub>4</sub>.

Micro-and nano-structures in silicon studied by DLTS and scanning probe methods.

Photoinduced transient spectroscopy of defect centers in GaN and SiC.

EBIC measurements of small diffusion length in semiconductor structures.

Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe.

EBIC characterization of strained Si/SiGe heterostructures.

IBIC characterization of charge transport in CdTe:Cl.

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO.

Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates.

Si and Ge nanocluster formation in silica matrix.

Structural peculiarities of 4 H-SiC irradiated by Bi ions.

In-depth resolution for LBIC technique by two-photon absorption.