Results: 14
The energy structure of quantum dots induced in quantum wells by a nonuniform electric field.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1422, doi. 10.1134/S1063782607120081
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- Publication type:
- Article
Two-electron germanium centers with a negative correlation energy in lead chalcogenides.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1413, doi. 10.1134/S1063782607120068
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- Article
Kinetics of polarization current in a Pb<sub>3</sub>O<sub>4</sub> wide-gap photoconductor.
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- Semiconductors, 2007, v. 41, n. 12, p. 1405, doi. 10.1134/S1063782607120044
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- Publication type:
- Article
Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1434, doi. 10.1134/S106378260712010X
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- Publication type:
- Article
An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1439, doi. 10.1134/S1063782607120111
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- Publication type:
- Article
Formation of an interphase boundary under highly nonequilibrium conditions.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1457, doi. 10.1134/S1063782607120147
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- Publication type:
- Article
Specific optical and photoelectric properties of thin CuIn<sub>3</sub>Se<sub>5</sub> films synthesized by laser deposition.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1394, doi. 10.1134/S1063782607120020
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- Publication type:
- Article
Thermal stability and radiation resistance of tin valent states in the structure of the (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe)<sub> z − x </sub>(GeSe)<sub> x </sub> semiconductor glasses.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1408, doi. 10.1134/S1063782607120056
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- Publication type:
- Article
Special properties of X-ray diffraction on carbon onions.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1430, doi. 10.1134/S1063782607120093
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- Publication type:
- Article
Isothermal polarization in thin-film Al-As<sub>2</sub>Se<sub>3</sub>-Al metal-dielectric-metal structures.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1419, doi. 10.1134/S106378260712007X
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- Publication type:
- Article
Domain formation during syntaxy of polytypes of silicon carbide.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1389, doi. 10.1134/S1063782607120019
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- Publication type:
- Article
Role of singlet oxygen in formation of nanoporous silicon.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1453, doi. 10.1134/S1063782607120135
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- Publication type:
- Article
Structural systematic features of photoelectric effect in aromatic polymers with polymethine dyes.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1445, doi. 10.1134/S1063782607120123
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- Publication type:
- Article
Participation of electron-phonon interaction in the ultrafast self-modulation of absorption of light in GaAs. Relation of modulation of absorption with the spectrum of stimulated radiation in GaAs.
- Published in:
- Semiconductors, 2007, v. 41, n. 12, p. 1398, doi. 10.1134/S1063782607120032
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- Publication type:
- Article