Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 11

Results: 20

Specific features of dynamic injection and base layer modulation processes in power n +- p- p + diodes.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1381, doi. 10.1134/S1063782607110206
By:
- Mnatsakanov, T. T.;
- Levinshtein, M. E.;
- Tandoev, A. G.;
- Yurkov, S. N.
Publication type:
Article
Mechanisms of current flow in metal-semiconductor ohmic contacts.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1263, doi. 10.1134/S1063782607110012
By:
- Blank, T. V.;
- Gol'dberg, Yu. A.
Publication type:
Article
Large-magnitude spin polarization of electrons in an InAs-based diode structure.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1293, doi. 10.1134/S1063782607110024
By:
- Terent'ev, Ya. V.;
- Lyublinskaya, O. G.;
- Usikova, A. A.;
- Toropov, A. A.;
- Solov'ev, V. A.;
- Ivanov, S. V.
Publication type:
Article
Cathodoluminescence from dilute GaN x As1− x solutions ( x ≤ 0.03).
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1297, doi. 10.1134/S1063782607110036
By:
- Brunkov, P. N.;
- Gutkin, A. A.;
- Zamoryanskaya, M. V.;
- Khrustalev, V. S.
Publication type:
Article
Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1300, doi. 10.1134/S1063782607110048
By:
- Poklonski, N. A.;
- Vyrko, S. A.;
- Zabrodskii, A. G.
Publication type:
Article
Properties of CuIn3Se5 crystals and In/CuIn3Se5 structures.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X
By:
- Bodnar', I. V.;
- Rud', V. Yu;
- Rud', Yu. V.
Publication type:
Article
Barrier-height measurement for a gallium arsenide metal-semi-insulator interface.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1310, doi. 10.1134/S1063782607110061
By:
- Ayzenshtat, G. I.;
- Lelekov, M. A.;
- Tolbanov, O. P.
Publication type:
Article
Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1339, doi. 10.1134/S1063782607110127
By:
- Zaitsev, S. V.;
- Welsch, M. K.;
- Forchel, A.;
- Bacher, G.
Publication type:
Article
Transport properties of two-dimensional hole gas in a Ge1− x Si x /Ge/Ge1− x Si x quantum well in the vicinity of metal-insulator transition.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1315, doi. 10.1134/S1063782607110085
By:
- Arapov, Yu. G.;
- Neverov, V. N.;
- Harus, G. I.;
- Shelushinina, N. G.;
- Yakunin, M. V.;
- Gudina, S. V.;
- Karskanov, I. V.;
- Kuznetsov, O. A.;
- de Visser, A.;
- Ponomarenko, L.
Publication type:
Article
Excition states in semiconductor quantum dots in the modified effective mass approximation.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1323, doi. 10.1134/S1063782607110097
By:
- Pokutnyĭ, S. I.
Publication type:
Article
Integer quantum Hall effect and correlated disorder.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1329, doi. 10.1134/S1063782607110103
By:
- Greshnov, A. A.;
- Zegrya, G. G.
Publication type:
Article
Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1335, doi. 10.1134/S1063782607110115
By:
- Gutkin, A. A.;
- Brunkov, P. N.;
- Konnikov, S. G.
Publication type:
Article
Erbium ion electroluminescence in p ++/ n +/ n-Si:Er/ n ++ silicon diode structures.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1312, doi. 10.1134/S1063782607110073
By:
- Kuznetsov, V. P.;
- Remizov, D. Yu.;
- Shmagin, V. B.;
- Kudryavtsev, K. E.;
- Shabanov, V. N.;
- Obolensky, S. V.;
- Belova, O. V.;
- Kuznetsov, M. V.;
- Kornaukhov, A. V.;
- Andreev, B. A.;
- Krasil'nik, Z. F.
Publication type:
Article
Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1369, doi. 10.1134/S1063782607110188
By:
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyi, M. A.;
- Shlenskii, A. A.;
- Lunin, L. S.;
- Ratushnyi, V. I.;
- Koryuk, A. V.;
- Tarakanova, N. G.
Publication type:
Article
Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1351, doi. 10.1134/S1063782607110140
By:
- Palenov, D. A.;
- Zhigunov, D. M.;
- Shalygina, O. A.;
- Kashkarov, P. K.;
- Timoshenko, V. Yu.
Publication type:
Article
Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1361, doi. 10.1134/S1063782607110164
By:
- Belogorokhov, I. A.;
- Tikhonov, E. V.;
- Breusova, M. O.;
- Pushkarev, V. E.;
- Zoteev, A. V.;
- Tomilova, L. G.;
- Khokhlov, D. R.
Publication type:
Article
Frequency shift in a system of two laser diodes.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1364, doi. 10.1134/S1063782607110176
By:
- Biryukov, A. A.;
- Zvonkov, B. N.;
- Nekorkin, S. M.;
- Aleshkin, V. Ya.;
- Gavrilenko, V. I.;
- Marem'yanin, K. V.;
- Morozov, S. V.;
- Kocharovskii, V. V.;
- Kocharovskii, Vl. V.
Publication type:
Article
CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1345, doi. 10.1134/S1063782607110139
By:
- Sedova, I. V.;
- Lyublinskaya, O. G.;
- Sorokin, S. V.;
- Sitnikova, A. A.;
- Toropov, A. A.;
- Donatini, F.;
- Le Si Dang;
- Ivanov, S. V.
Publication type:
Article
Two-band combined model of a resonant tunneling diode.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1375, doi. 10.1134/S106378260711019X
By:
- Abramov, I. I.;
- Goncharenko, I. A.;
- Kolomeitseva, N. V.
Publication type:
Article
Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1356, doi. 10.1134/S1063782607110152
By:
- Shaleev, M. V.;
- Novikov, A. V.;
- Yablonskiĭ, A. N.;
- Kuznetsov, O. A.;
- Drozdov, Yu. N.;
- Lobanov, D. N.;
- Krasil'nik, Z. F.
Publication type:
Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 11

Specific features of dynamic injection and base layer modulation processes in power n <sup>+</sup>- p- p <sup>+</sup> diodes.

Mechanisms of current flow in metal-semiconductor ohmic contacts.

Large-magnitude spin polarization of electrons in an InAs-based diode structure.

Cathodoluminescence from dilute GaN<sub> x </sub>As<sub>1− x </sub> solutions ( x ≤ 0.03).

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.

Properties of CuIn<sub>3</sub>Se<sub>5</sub> crystals and In/CuIn<sub>3</sub>Se<sub>5</sub> structures.

Barrier-height measurement for a gallium arsenide metal-semi-insulator interface.

Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells.

Transport properties of two-dimensional hole gas in a Ge<sub>1− x </sub>Si<sub> x </sub>/Ge/Ge<sub>1− x </sub>Si<sub> x </sub> quantum well in the vicinity of metal-insulator transition.

Excition states in semiconductor quantum dots in the modified effective mass approximation.

Integer quantum Hall effect and correlated disorder.

Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix.

Erbium ion electroluminescence in p <sup>++</sup>/ n <sup>+</sup>/ n-Si:Er/ n <sup>++</sup> silicon diode structures.

Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C.

Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping.

Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions.

Frequency shift in a system of two laser diodes.

CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor.

Two-band combined model of a resonant tunneling diode.

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers.