Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 1
Results: 21
Temperature dependence of the coefficient of linear thermal expansion of single-crystal SmS.
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- Semiconductors, 2007, v. 41, n. 1, p. 1, doi. 10.1134/S1063782607010010
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- Article
Accumulation of structural defects in silicon irradiated with PF cluster ions with medium energies.
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- Semiconductors, 2007, v. 41, n. 1, p. 5, doi. 10.1134/S1063782607010022
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Electrical properties of ZnSiAs<sub>2</sub> irradiated with protons.
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- Semiconductors, 2007, v. 41, n. 1, p. 11, doi. 10.1134/S1063782607010034
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Frenkel thermal-field effect in MnGaInS<sub>4</sub> layered single crystals.
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- Semiconductors, 2007, v. 41, n. 1, p. 15, doi. 10.1134/S1063782607010046
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- Article
Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating.
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- Semiconductors, 2007, v. 41, n. 1, p. 18, doi. 10.1134/S1063782607010058
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- Article
Electrical properties and structure of chalcogenide glasses containing bivalent tin.
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- Semiconductors, 2007, v. 41, n. 1, p. 22, doi. 10.1134/S106378260701006X
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- Article
Optical properties of CuIn<sub>5</sub>Se<sub>8</sub> single crystals.
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- Semiconductors, 2007, v. 41, n. 1, p. 26, doi. 10.1134/S1063782607010071
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- Article
Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B).
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- Semiconductors, 2007, v. 41, n. 1, p. 30, doi. 10.1134/S1063782607010083
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- Article
Capacitance-voltage characteristics of the p-Cd<sub>0.27</sub>Hg<sub>0.73</sub>Te-based structures with a wide-gap graded-gap surface layer.
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- Semiconductors, 2007, v. 41, n. 1, p. 37, doi. 10.1134/S1063782607010095
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- Article
Photoelectric phenomena in the Cu (Al, In)/ p-CuIn<sub>3</sub>Se<sub>5</sub> Schottky barriers.
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- Semiconductors, 2007, v. 41, n. 1, p. 43, doi. 10.1134/S1063782607010101
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Schottky barriers based on n-In<sub>2</sub>S<sub>3</sub> films obtained by laser-induced evaporation.
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- Semiconductors, 2007, v. 41, n. 1, p. 47, doi. 10.1134/S1063782607010113
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- Article
Photoelectric properties of In/In<sub>2</sub>Se<sub>3</sub> structures.
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- Semiconductors, 2007, v. 41, n. 1, p. 52, doi. 10.1134/S1063782607010125
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- Article
Specific features of molecules’ pyrolysis on the epitaxial surface in the case of growth of the Si<sub>1 − x </sub>Ge<sub> x </sub> layers from hydrides in vacuum.
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- Semiconductors, 2007, v. 41, n. 1, p. 55, doi. 10.1134/S1063782607010137
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Efficient second-harmonic generation in a double-quantum-well structure.
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- Semiconductors, 2007, v. 41, n. 1, p. 66, doi. 10.1134/S1063782607010149
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Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures.
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- Semiconductors, 2007, v. 41, n. 1, p. 73, doi. 10.1134/S1063782607010150
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- Article
Atomic defects of the walls and the electronic structure of molybdenum disulfide nanotubes.
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- Semiconductors, 2007, v. 41, n. 1, p. 81, doi. 10.1134/S1063782607010162
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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures.
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- Semiconductors, 2007, v. 41, n. 1, p. 87, doi. 10.1134/S1063782607010174
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- Article
Potential of using the Cd<sub>0.8</sub>Hg<sub>0.2</sub>Te alloy in solar cells.
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- Semiconductors, 2007, v. 41, n. 1, p. 94, doi. 10.1134/S1063782607010186
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- Article
Silicon-on-insulator nanotransistors with two independent gates.
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- Semiconductors, 2007, v. 41, n. 1, p. 103, doi. 10.1134/S1063782607010198
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A method for calculating the transient time of a multi-stage thermoelectric cooler.
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- Semiconductors, 2007, v. 41, n. 1, p. 110, doi. 10.1134/S1063782607010204
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Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles.
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- Semiconductors, 2007, v. 41, n. 1, p. 115, doi. 10.1134/S1063782607010216
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- Article