Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 8

Results: 19

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 934, doi. 10.1134/S1063782606080124

By:

Bondar, N. V.;
Brodyn, M. S.;
Tel'biz, G. M.

Publication type:

Article

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 884, doi. 10.1134/S1063782606080045

By:

Sachenko, A. V.;
Gorban, A. P.;
Kostylyov, V. P.;
Sokolovsky, I. O.

Publication type:

Article

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 869, doi. 10.1134/S106378260608001X

By:

Khludkov, S. S.

Publication type:

Article

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 875, doi. 10.1134/S1063782606080021

By:

Aleksandrov, O. V.

Publication type:

Article

Planar lateral crystallization of the cobalt-silicide phase on silicon surface.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 881, doi. 10.1134/S1063782606080033

By:

Belousov, I. V.;
Kuznetsov, G. V.;
Pchelyakov, O. P.

Publication type:

Article

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 890, doi. 10.1134/S1063782606080057

By:

Pagava, T. A.

Publication type:

Article

Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb1- x SnxS alloys.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 898, doi. 10.1134/S1063782606080070

By:

Castro, R. A.;
Nemov, S. A.;
Seregin, P. P.

Publication type:

Article

Characteristics of the oxide- p-InSe heterojunctions exposed to irradiation with X-ray photons.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 911, doi. 10.1134/S1063782606080094

By:

Kovalyuk, Z. D.;
Katerynchuk, V. N.;
Politanska, O. A.;
Raransky, N. D.

Publication type:

Article

Stabilization of the fermi level by a resonant gallium level in Pb1− x SnxTe alloys.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 893, doi. 10.1134/S1063782606080069

By:

Skipetrov, E. P.;
Zvereva, E. A.;
Dmitriev, N. N.;
Golubev, A. V.;
Slynko, V. E.

Publication type:

Article

Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 901, doi. 10.1134/S1063782606080082

By:

Baranov, P. G.;
Ber, B. Ya.;
Godisov, O. N.;
Il'in, I. V.;
Ionov, A. N.;
Kaliteevskiĭ, A. K.;
Kaliteevskiĭ, M. A.;
Lazebnik, I. M.;
Safronov, A. Yu.;
Pohl, H.-J.;
Riemann, H.;
Abrosimov, N. V.;
Kop'ev, P. S.;
Bulanov, A. D.;
Gusev, A. V.

Publication type:

Article

Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 915, doi. 10.1134/S1063782606080100

By:

Baranov, I. L.;
Tabulina, L V..;
Stanovaya, L. S.;
Rusalskaya, T. G.

Publication type:

Article

Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 920, doi. 10.1134/S1063782606080112

By:

Gurin, N. T.;
Afanas'ev, A. M.;
Sabitov, O. Yu.;
Ryabov, D. V.

Publication type:

Article

Excitonic photoluminescence of silicon quantum-well structures.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 941, doi. 10.1134/S1063782606080136

By:

Sachenko, A. V..;
Korbutyak, D. V.;
Kryuchenko, Yu. V.;
Kupchak, I. M.

Publication type:

Article

Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 949, doi. 10.1134/S1063782606080148

By:

Petrov, V. A.;
Nikitin, A. V.

Publication type:

Article

Low-temperature materials and thin-film transistors for electronics on flexible substrates.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 959, doi. 10.1134/S106378260608015X

By:

Sazonov, A.;
Meitine, M.;
Stryakhilev, D.;
Nathan, A.

Publication type:

Article

Specific features of anisotropic optical thermoelements.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 968, doi. 10.1134/S1063782606080161

By:

Ashcheulov, A. A.;
Gutsul, I. V.

Publication type:

Article

InAs flip-chip LEDs with InGaAsSb buffer layers.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 977, doi. 10.1134/S1063782606080173

By:

Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyĭ, M. A.;
Stus’, N. M.;
Shustov, V. V.;
Tarakanova, N. G.

Publication type:

Article

Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 982, doi. 10.1134/S1063782606080185

By:

Ankudinov, A. V.;
Evtikhiev, V. P.;
Ladutenko, K. S.;
Titkov, A. N.;
Laiho, R.

Publication type:

Article

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 990, doi. 10.1134/S1063782606080197

By:

Slipchenko, S. O.;
Sokolova, Z. N.;
Pikhtin, N. A.;
Borschev, K. S.;
Vinokurov, D. A.;
Tarasov, I. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 8

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses.

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs.

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation.

Planar lateral crystallization of the cobalt-silicide phase on silicon surface.

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals.

Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb<sub>1- x </sub>Sn<sub>x</sub>S alloys.

Characteristics of the oxide- p-InSe heterojunctions exposed to irradiation with X-ray photons.

Stabilization of the fermi level by a resonant gallium level in Pb<sub>1− x </sub>Sn<sub>x</sub>Te alloys.

Specific features of transmutational doping of <sup>30</sup>Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.

Effect of fast annealing on the electrical properties of SiO<sub>2</sub>/Si structures with thin layers of anodic silicon oxide.

Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures.

Excitonic photoluminescence of silicon quantum-well structures.

Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures.

Low-temperature materials and thin-film transistors for electronics on flexible substrates.

Specific features of anisotropic optical thermoelements.

InAs flip-chip LEDs with InGaAsSb buffer layers.

Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode.

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.