Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 5

Results: 18

Influence of pyrolysis conditions of aqueous solution aerosol of thiocarbamide complexes on the microwave photoconductivity of cadmium sulfide films.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 497, doi. 10.1134/S1063782606050010
By:
- Sermakasheva, N. L/;
- Shul'ga, Yu. M.;
- Meteleva, Yu. V.;
- Novikov, G. F.
Publication type:
Article
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 503, doi. 10.1134/S1063782606050022
By:
- Voronina, T. I..;
- Lagunova, T. S.;
- Mikhaĭlova, M. P.;
- Moiseev, K. D.;
- Lipaev, A. F.;
- Yakovlev, Yu. P.
Publication type:
Article
On metal-insulator electronic phase transitions in semiconductors.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 521, doi. 10.1134/S1063782606050034
By:
- Daunov, M. I.;
- Kamilov, I. K.;
- Gabibov, S. F.
Publication type:
Article
Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 527, doi. 10.1134/S1063782606050046
By:
- Shamirzaev, T. S.;
- Toropov, A. I.;
- Bakarov, A. K.;
- Zhuravlev, K. S.;
- Kobitski, A. Yu.;
- Wagner, H. P.;
- Zahn, D. R. T.
Publication type:
Article
Scattering of holes by the GaAs/AlAs (111) and (110) interfaces.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 534, doi. 10.1134/S1063782606050058
By:
- Karavaev, G. F.;
- Chernyshov, V. N.
Publication type:
Article
Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 543, doi. 10.1134/S106378260605006X
By:
- Antonova, I. V.;
- Shaĭmeev, S. S.;
- Smagulova, S. A.
Publication type:
Article
Estimates of the exciton transition energy in NH/3C/NH ( N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 549, doi. 10.1134/S1063782606050071
By:
- Davydov, S. Yu.;
- Lebedev, A. A.;
- Posrednik, O. V.
Publication type:
Article
Electrical characteristics of the ITO/HgInTe photodiodes.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 554, doi. 10.1134/S1063782606050083
By:
- Kosyachenko, L. A.;
- Rarenko, I. M.;
- Sklyarchuk, E. F.;
- German, I. I.;
- Sun Weiguo
Publication type:
Article
Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 558, doi. 10.1134/S1063782606050095
By:
- Khabarov, Yu. V.;
- Kapaev, V. V.;
- Petrov, V. A.;
- Galiev, G. B.
Publication type:
Article
Tunneling recombination in spatially inhomogeneous structures.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 570, doi. 10.1134/S1063782606050101
By:
- Grushko, N. S.;
- Loginova, E. A.;
- Potanakhina, L. N.
Publication type:
Article
The study of lateral carrier transport in structures with InGaN quantum dots in the active region.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113
By:
- Sizov, V. S.;
- Sizov, D. S.;
- Mikhailovskiĭ, G. A.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 581, doi. 10.1134/S1063782606050125
By:
- Telenkov, M. P.;
- Mityagin, Yu. A.
Publication type:
Article
The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 587, doi. 10.1134/S1063782606050137
By:
- Tonkikh, A. A.;
- Cirlin, G. E.;
- Polyakov, N. K.;
- Samsonenko, Yu. B.;
- Ustinov, V. M.;
- Zakharov, N. D.;
- Werner, P.;
- Talalaev, V. G.;
- Novikov, B. V.
Publication type:
Article
Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 592, doi. 10.1134/S1063782606050149
By:
- Pikhtin, A. N.;
- Komkov, O. S.;
- Bazarov, K. V.
Publication type:
Article
The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 598, doi. 10.1134/S1063782606050150
By:
- Bulakh, B. M.;
- Korsunska, N.;
- Khomenkova, L. Yu.;
- Staraya, T. R.;
- Sheĭnkman, M. K.
Publication type:
Article
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 605, doi. 10.1134/S1063782606050162
By:
- Efremov, A. A.;
- Bochkareva, N. I.;
- Gorbunov, R. I.;
- Lavrinovich, D. A.;
- Rebane, Yu. T.;
- Tarkhin, D. V.;
- Shreter, Yu. G.
Publication type:
Article
High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 611, doi. 10.1134/S1063782606050174
By:
- Andreev, A. Yu.;
- Leshko, A. Yu.;
- Lyutetskiĭ, A. V.;
- Marmalyuk, A. A.;
- Nalyot, T. A.;
- Padalitsa, A. A.;
- Pikhtin, N. A.;
- Sabitov, D. R.;
- Simakov, V. A.;
- Slipchenko, S. O.;
- Khomylev, M. A.;
- Tarasov, I. S.
Publication type:
Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
By:
- Blokhin, S. A.;
- Maleev, N. A.;
- Kuz'menkov, A. G.;
- Shernyakov, Yu. M.;
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Dyudelev, V. V.;
- Sokolovskiĭ, G. S.;
- Kuchinskiĭ, V. I.;
- Kulagina, M. M.;
- Maximov, M. V.;
- Ustinov, V. M.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article