Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 5

Results: 18

The study of lateral carrier transport in structures with InGaN quantum dots in the active region.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113

By:

Sizov, V. S.;
Sizov, D. S.;
Mikhailovskiĭ, G. A.;
Zavarin, E. E.;
Lundin, V. V.;
Tsatsul'nikov, A. F.;
Ledentsov, N. N.

Publication type:

Article

Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 581, doi. 10.1134/S1063782606050125

By:

Telenkov, M. P.;
Mityagin, Yu. A.

Publication type:

Article

Tunneling recombination in spatially inhomogeneous structures.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 570, doi. 10.1134/S1063782606050101

By:

Grushko, N. S.;
Loginova, E. A.;
Potanakhina, L. N.

Publication type:

Article

The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 587, doi. 10.1134/S1063782606050137

By:

Tonkikh, A. A.;
Cirlin, G. E.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.;
Talalaev, V. G.;
Novikov, B. V.

Publication type:

Article

Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 592, doi. 10.1134/S1063782606050149

By:

Pikhtin, A. N.;
Komkov, O. S.;
Bazarov, K. V.

Publication type:

Article

Influence of pyrolysis conditions of aqueous solution aerosol of thiocarbamide complexes on the microwave photoconductivity of cadmium sulfide films.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 497, doi. 10.1134/S1063782606050010

By:

Sermakasheva, N. L/;
Shul'ga, Yu. M.;
Meteleva, Yu. V.;
Novikov, G. F.

Publication type:

Article

Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 503, doi. 10.1134/S1063782606050022

By:

Voronina, T. I..;
Lagunova, T. S.;
Mikhaĭlova, M. P.;
Moiseev, K. D.;
Lipaev, A. F.;
Yakovlev, Yu. P.

Publication type:

Article

On metal-insulator electronic phase transitions in semiconductors.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 521, doi. 10.1134/S1063782606050034

By:

Daunov, M. I.;
Kamilov, I. K.;
Gabibov, S. F.

Publication type:

Article

Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 527, doi. 10.1134/S1063782606050046

By:

Shamirzaev, T. S.;
Toropov, A. I.;
Bakarov, A. K.;
Zhuravlev, K. S.;
Kobitski, A. Yu.;
Wagner, H. P.;
Zahn, D. R. T.

Publication type:

Article

Scattering of holes by the GaAs/AlAs (111) and (110) interfaces.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 534, doi. 10.1134/S1063782606050058

By:

Karavaev, G. F.;
Chernyshov, V. N.

Publication type:

Article

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 543, doi. 10.1134/S106378260605006X

By:

Antonova, I. V.;
Shaĭmeev, S. S.;
Smagulova, S. A.

Publication type:

Article

Estimates of the exciton transition energy in NH/3C/NH ( N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 549, doi. 10.1134/S1063782606050071

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Posrednik, O. V.

Publication type:

Article

Electrical characteristics of the ITO/HgInTe photodiodes.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 554, doi. 10.1134/S1063782606050083

By:

Kosyachenko, L. A.;
Rarenko, I. M.;
Sklyarchuk, E. F.;
German, I. I.;
Sun Weiguo

Publication type:

Article

Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 558, doi. 10.1134/S1063782606050095

By:

Khabarov, Yu. V.;
Kapaev, V. V.;
Petrov, V. A.;
Galiev, G. B.

Publication type:

Article

The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 598, doi. 10.1134/S1063782606050150

By:

Bulakh, B. M.;
Korsunska, N.;
Khomenkova, L. Yu.;
Staraya, T. R.;
Sheĭnkman, M. K.

Publication type:

Article

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 605, doi. 10.1134/S1063782606050162

By:

Efremov, A. A.;
Bochkareva, N. I.;
Gorbunov, R. I.;
Lavrinovich, D. A.;
Rebane, Yu. T.;
Tarkhin, D. V.;
Shreter, Yu. G.

Publication type:

Article

High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 611, doi. 10.1134/S1063782606050174

By:

Andreev, A. Yu.;
Leshko, A. Yu.;
Lyutetskiĭ, A. V.;
Marmalyuk, A. A.;
Nalyot, T. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Sabitov, D. R.;
Simakov, V. A.;
Slipchenko, S. O.;
Khomylev, M. A.;
Tarasov, I. S.

Publication type:

Article

VCSELs based on arrays of sub-monolayer InGaAs quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186

By:

Blokhin, S. A.;
Maleev, N. A.;
Kuz'menkov, A. G.;
Shernyakov, Yu. M.;
Novikov, I. I.;
Gordeev, N. Yu.;
Dyudelev, V. V.;
Sokolovskiĭ, G. S.;
Kuchinskiĭ, V. I.;
Kulagina, M. M.;
Maximov, M. V.;
Ustinov, V. M.;
Kovsh, A. R.;
Mikhrin, S. S.;
Ledentsov, N. N.

Publication type:

Article