The correlation between the surface-energy minima and the shape of self-induced SiGe nanoislands.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 385, doi. 10.1134/S1063782606040026
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 4
Results: 22
1
2
Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 449, doi. 10.1134/S1063782606040142
- By:
- Publication type:
- Article
3
Simulation of aluminum diffusion in silicon in inert and oxidizing media.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 379, doi. 10.1134/S1063782606040014
- By:
- Publication type:
- Article
4
Specific features of the spectra of nonlinear optical absorption in nonstoichiometric and Ni doped GaSe single crystals.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 391, doi. 10.1134/S1063782606040038
- By:
- Publication type:
- Article
5
Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 454, doi. 10.1134/S1063782606040154
- By:
- Publication type:
- Article
6
The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 394, doi. 10.1134/S106378260604004X
- By:
- Publication type:
- Article
7
Photoconductivity and luminescence of CuInSe<sub>2</sub> single crystals at a high level of optical excitation.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 401, doi. 10.1134/S1063782606040051
- By:
- Publication type:
- Article
8
The temporal and spatial instability of photoelectric response of the CdZnTe crystals.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 403, doi. 10.1134/S1063782606040063
- By:
- Publication type:
- Article
9
Infrared reflectance spectra and morphologic features of the surface of epitaxial Al<sub>x</sub>Ga<sub>1− x </sub>As/GaAs(100) heterostructures with the ordered AlGaAs<sub>2</sub> phase.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 406, doi. 10.1134/S1063782606040075
- By:
- Publication type:
- Article
10
Effect of copper ion implantation on the optical properties and low-temperature conductivity of carbon films.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 414, doi. 10.1134/S1063782606040087
- By:
- Publication type:
- Article
11
Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 420, doi. 10.1134/S1063782606040099
- By:
- Publication type:
- Article
12
Energy spectrum and magnetooptical properties of a D <sup>(−)</sup> center in a quantum constriction.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 427, doi. 10.1134/S1063782606040105
- By:
- Publication type:
- Article
13
Spin splitting and electron g-factor of an excited quantum confinement subband.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 433, doi. 10.1134/S1063782606040117
- By:
- Publication type:
- Article
14
Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 440, doi. 10.1134/S1063782606040129
- By:
- Publication type:
- Article
15
Photoluminescence of nanocrystalline silicon films formed by pulsed laser-assisted deposition with the introduction of carbon.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 443, doi. 10.1134/S1063782606040130
- By:
- Publication type:
- Article
16
Influence of interface growth steps on the anisotropy of excitonic emission in ZnCdSe/ZnSe quantum wells.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 459, doi. 10.1134/S1063782606040166
- By:
- Publication type:
- Article
17
Lithium intercalation into amorphous silicon thin films.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 468, doi. 10.1134/S1063782606040178
- By:
- Publication type:
- Article
18
Alternating current conductivity of anisotropically nanostructured silicon.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 471, doi. 10.1134/S106378260604018X
- By:
- Publication type:
- Article
19
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 476, doi. 10.1134/S1063782606040191
- By:
- Publication type:
- Article
20
Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 481, doi. 10.1134/S1063782606040208
- By:
- Publication type:
- Article
21
Parametric optimization of the Bragg reflectors in a laser with the vertical cavity and nonlinear frequency conversion.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 486, doi. 10.1134/S106378260604021X
- By:
- Publication type:
- Article
22
A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO<sub>2</sub>.
- Published in:
- Semiconductors, 2006, v. 40, n. 4, p. 491, doi. 10.1134/S1063782606040221
- By:
- Publication type:
- Article