Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 3

Results: 22

A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 357, doi. 10.1134/S1063782606030195

By:

Požela, J. K.;
Mokerov, V. G.

Publication type:

Article

A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 362, doi. 10.1134/S1063782606030201

By:

Mokerov, V.;
Požela, J.;
Požela, K.;
Juciene, V.

Publication type:

Article

Conductivity of charge-ordered layered crystals in quantizing magnetic fields in the inversion region of the nonoscillating magnetoresistance component.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 291, doi. 10.1134/S1063782606030079

By:

Gorskyi, P. V.

Publication type:

Article

On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 299, doi. 10.1134/S1063782606030080

By:

Davydov, S. Yu.;
Posrednik, O. V.

Publication type:

Article

The theory of the formation of multilayered thin films on solid surfaces.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 249, doi. 10.1134/S1063782606030018

By:

Dubrovskiĭ, V. G.;
Sibirev, N. V.;
Cirlin, G. E.;
Ustinov, V. M.

Publication type:

Article

Surface acoustic breathers in semiconductors.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 257, doi. 10.1134/S106378260603002X

By:

Adamashvili, G. T.;
Adamashvili, N. T.;
Motsonelidze, G. N.;
Peikrishvili, M. D.

Publication type:

Article

Nonlinear longitudinal waves of interacting fields of deformation and defect concentration in germanium and silicon.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 262, doi. 10.1134/S1063782606030031

By:

Mirzade, F. Kh.

Publication type:

Article

Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 270, doi. 10.1134/S1063782606030043

By:

Vengrenovich, R. D.;
Moskalyuk, A. V.;
Yarema, S. V.

Publication type:

Article

Band gap and optical properties of the CdxHg1 − x − y ZnyTe alloys in ultraviolet and visible spectral regions.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 276, doi. 10.1134/S1063782606030055

By:

Belogorokhov, A. I.;
Florentsev, A. A.;
Belogorokhov, I. A.;
Pashkova, N. V.;
Elyutin, A. V.

Publication type:

Article

Laser-stimulated compensation of bulk defects in p-CdZnTe.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 282, doi. 10.1134/S1063782606030067

By:

Plyatsko, S. V.;
Rashkovets'kyi, L. V.

Publication type:

Article

The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 367, doi. 10.1134/S1063782606030213

By:

Boĭko, A. M.;
Suris, R. A.

Publication type:

Article

A model of the conductivity of p-type polycrystalline silicon with regard to current spreading in crystallites.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 302, doi. 10.1134/S1063782606030092

By:

Lubimskiĭ, V. M.

Publication type:

Article

Influence of insulator thickness nonuniformity on the switching of the Al/SiO2/ n-Si tunnel MOS structure at reverse bias.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 309, doi. 10.1134/S1063782606030109

By:

Tyaginov, S. E.;
Vexler, M. I.;
Shulekin, A. F.;
Grekhov, I. V.

Publication type:

Article

Formation of defects in GaAs and Si as a result of Pd deposition onto the surface.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 314, doi. 10.1134/S1063782606030110

By:

Karpovich, I. A.;
Tikhov, S. V.;
Shobolov, E. L.;
Andryushchenko, I. A.

Publication type:

Article

Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 319, doi. 10.1134/S1063782606030122

By:

Bolkhovityanov, Yu. B.;
Deryabin, A. S.;
Gutakovskiĭ, A. K.;
Revenko, M. A.;
Sokolov, L. V.

Publication type:

Article

Spectral sensitivity of p-Cu1.8S/ n −-ZnS/ n-(II-VI) heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 327, doi. 10.1134/S1063782606030134

By:

Komaschenko, V. N.;
Kolezhuk, K. V.;
Yaroshenko, N. V.;
Sheremetova, G. I.;
Bobrenko, Yu. N.

Publication type:

Article

Coupling of electron states in the InAs/GaAs quantum dot molecule.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 331, doi. 10.1134/S1063782606030146

By:

Sobolev, M. M.;
Zhukov, A. E.;
Vasil'ev, A. P.;
Semenova, E. S.;
Mikhrin, V. S.;
Cirlin, G. E.;
Musikhin, Yu. G.

Publication type:

Article

Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1− x Gex layer.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 338, doi. 10.1134/S1063782606030158

By:

Drozdov, Yu. N.;
Krasil'nik, Z. F.;
Lobanov, D. N.;
Novikov, A. V.;
Shaleev, M. V.;
Yablonskiĭ, A. N.

Publication type:

Article

InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 342, doi. 10.1134/S106378260603016X

By:

Mikhrin, V. S.;
Vasil'ev, A. P.;
Semenova, E. S.;
Kryzhanovskaya, N. V.;
Gladyshev, A. G.;
Musikhin, Yu. G.;
Egorov, A. Yu.;
Zhukov, A. E.;
Ustinov, V. M.

Publication type:

Article

Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 346, doi. 10.1134/S1063782606030171

By:

Karlina, L. B.;
Vlasov, A. S.;
Kulagina, M. M.;
Timoshina, N. Kh.

Publication type:

Article

The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 351, doi. 10.1134/S1063782606030183

By:

Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus', N. M.;
Shlenskiĭ, A. A.

Publication type:

Article

Determination of the coefficient of light attenuation in thin layers of light-emitting diodes.

Published in:

Semiconductors, 2006, v. 40, n. 3, p. 375, doi. 10.1134/S1063782606030225

By:

Efremov, A. A.;
Tarkhin, D. V.;
Bochkareva, N. I.;
Gorbunov, R. I.;
Rebane, Yu. T.;
Shreter, Yu. G.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 3

A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor.

A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons.

Conductivity of charge-ordered layered crystals in quantizing magnetic fields in the inversion region of the nonoscillating magnetoresistance component.

On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface.

The theory of the formation of multilayered thin films on solid surfaces.

Surface acoustic breathers in semiconductors.

Nonlinear longitudinal waves of interacting fields of deformation and defect concentration in germanium and silicon.

Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures.

Band gap and optical properties of the Cd<sub>x</sub>Hg<sub>1 − x − y </sub>Zn<sub>y</sub>Te alloys in ultraviolet and visible spectral regions.

Laser-stimulated compensation of bulk defects in p-CdZnTe.

The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal.

A model of the conductivity of p-type polycrystalline silicon with regard to current spreading in crystallites.

Influence of insulator thickness nonuniformity on the switching of the Al/SiO<sub>2</sub>/ n-Si tunnel MOS structure at reverse bias.

Formation of defects in GaAs and Si as a result of Pd deposition onto the surface.

Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy.

Spectral sensitivity of p-Cu<sub>1.8</sub>S/ n <sup>−</sup>-ZnS/ n-(II-VI) heterostructures.

Coupling of electron states in the InAs/GaAs quantum dot molecule.

Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si<sub>1− x </sub>Ge<sub>x</sub> layer.

InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm.

Thermophotovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures.

The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm.

Determination of the coefficient of light attenuation in thin layers of light-emitting diodes.