Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 2

Results: 23

Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 148, doi. 10.1134/S1063782606020060

By:

Klevkov, Yu. V.;
Martovitskiĭ, V. P.;
Bagaev, V. S.;
Krivobok, V. S.

Publication type:

Article

A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 172, doi. 10.1134/S1063782606020114

By:

Saliĭ, Ya. P.

Publication type:

Article

Methods for the doping of silicon layers in growth by sublimation MBE.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 183, doi. 10.1134/S106378260602014X

By:

Shengurov, V. G.;
Svetlov, S. P.;
Chalkov, V. Yu.;
Shengurov, D. V.;
Denisov, S. A.

Publication type:

Article

Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 229, doi. 10.1134/S1063782606020217

By:

Vostokov, N. V.;
Drozdov, Yu. N.;
Krasil’nik, Z. F.;
Kuznetsov, O. A.;
Lobanov, D. N.;
Novikov, A. V.;
Shaleev, M. V.

Publication type:

Article

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 125, doi. 10.1134/S1063782606020011

By:

Bolotov, V. V.;
Kamaev, G. N.;
Noskov, A. V.;
Chernyaev, S. A.;
Roslikov, V. E.

Publication type:

Article

Stability of the photoresponse of Cd1− x ZnxTe crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 128, doi. 10.1134/S1063782606020023

By:

Komar, V. K.;
Mygal, V. P.;
Sulima, S. V.;
Phomin, A. S.

Publication type:

Article

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 131, doi. 10.1134/S1063782606020035

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Shelyapina, M. G.;
Fruchart, D.;
Chekurin, V. F.;
Romaka, L. P.;
Gorelenko, Yu. K.

Publication type:

Article

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 137, doi. 10.1134/S1063782606020047

By:

Bletskan, D. I.;
Madyar, J. J.;
Kabaciy, V. N.

Publication type:

Article

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 143, doi. 10.1134/S1063782606020059

By:

Parfenyuk, O. A.;
Ilashchuk, M. I.;
Ulyanitskiĭ, K. S.;
Fochuk, P. M.;
Strilchuk, O. M.;
Krylyuk, S. G.;
Korbutyak, D. V.

Publication type:

Article

Dynamics of the defects recharging in coarse-grained p-CdTe films.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 180, doi. 10.1134/S1063782606020138

By:

Ismailov, Kh. kH.;
Zhanabergenov, Zh.;
Mirsagatov, Sh. A.;
Karazhanov, S. Zh.

Publication type:

Article

Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 155, doi. 10.1134/S1063782606020072

By:

Malevich, V. L.

Publication type:

Article

Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 161, doi. 10.1134/S1063782606020084

By:

Bogdanova, V. A.;
Davletkil’deev, N. A.;
Semikolenova, N. A.;
Sidorov, E. N.

Publication type:

Article

Photosensitivity of Pb1− x SnxTe:In films in the terahertz region of the spectrum.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 164, doi. 10.1134/S1063782606020096

By:

Akimov, A. N.;
Erkov, V. G.;
Kubarev, V. V.;
Molodtsova, E. L.;
Klimov, A. É.;
Shumskiĭ, V. N.

Publication type:

Article

Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 169, doi. 10.1134/S1063782606020102

By:

Bulatov, M. F.;
Parkhomenko, Yu. N.

Publication type:

Article

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 217, doi. 10.1134/S1063782606020199

By:

Pokutniĭ, S. I.

Publication type:

Article

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 175, doi. 10.1134/S1063782606020126

By:

Evtukh, A. A.;
Kaganovich, É. B.;
Manoĭlov, É. G.;
Semenenko, N. A.

Publication type:

Article

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 190, doi. 10.1134/S1063782606020151

By:

Zhdan, A. G.;
Chucheva, G. V.;
Goldman, E. I.

Publication type:

Article

Properties of the CuInS2 surface and the effect of organic layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 197, doi. 10.1134/S1063782606020163

By:

Verbitskiĭ, A. B.;
Vertsimakha, Ya. I.;
Lutsyk, P. N.;
Studzinskiĭ, S. L.;
Bereznev, S.;
Kois, J.

Publication type:

Article

Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 202, doi. 10.1134/S1063782606020175

By:

Volodin, V. A.;
Yakimov, A. I.;
Dvurechenskiĭ, A. V.;
Efremov, M. D.;
Nikiforov, A. I.;
Gatskevich, E. I.;
Ivlev, G. D.;
Mikhalev, G. Yu.

Publication type:

Article

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187

By:

Kul'bachinskiĭ, V. A.;
Rogozin, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Zvonkov, B. N.;
Dashevsky, Z. M.;
Casian, V. A.

Publication type:

Article

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 234, doi. 10.1134/S1063782606020229

By:

Berashevich, J. A.;
Lazarouk, S. K.;
Borisenko, V. E.

Publication type:

Article

The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 224, doi. 10.1134/S1063782606020205

By:

Sibirev, N. V.;
Talalaev, V. G.;
Tonkikh, A. A.;
Cirlin, G. E.;
Dubrovskiĭ, V. G.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 240, doi. 10.1134/S1063782606020230

By:

Davidenko, N. A.;
Kokozay, V. V.;
Davidenko, I. I.;
Nesterova, O. V.;
Shevchenko, D. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 2

Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.

A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles.

Methods for the doping of silicon layers in growth by sublimation MBE.

Special features of the formation of Ge(Si) islands on the relaxed Si<sub>1−x</sub>Ge<sub>x</sub>/Si(001) buffer layers.

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon.

Stability of the photoresponse of Cd<sub>1− x </sub>Zn<sub>x</sub>Te crystals.

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals.

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.

Dynamics of the defects recharging in coarse-grained p-CdTe films.

Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation.

Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor.

Photosensitivity of Pb<sub>1− x </sub>Sn<sub>x</sub>Te:In films in the terahertz region of the spectrum.

Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration.

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.

Properties of the CuInS<sub>2</sub> surface and the effect of organic layers.

Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation.

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.

The band structure and photoluminescence in a Ge<sub>0.8</sub>Si<sub>0.2</sub>/Ge<sub>0.1</sub>Si<sub>0.9</sub> superlattice with vertically correlated quantum dots.

Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals.